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Description of bipolar transistor

The transistor is primarily used as a current amplifier. When a small current signal is applied to the base terminal of a bipolar transistor, it is amplified in the collector circuit. This current amplification is referred to as hfe or beta and equals Ic/Ib. As with all semiconductors, breakdown voltage of a transistor is also a design limitation. There are breakdown voltages that must be taken into account for each combination of terminals of a transistor. i.e. Vce, Vbe, and Vcb. However, Vce (collector-emitter voltage) with open base, designated as Vceo, is usually of most concern and defines the maximum circuit voltage of a bipolar transistor.

Also as with all semiconductors devices, there are undesirable leakage currents in a transistor, notably Icbo ,collector junction leakage; and Iebo, emitter junction leakage.

Selection of a Bipolar Transistor

Primary considerations when selecting a transistor are:

• Voltage ratings
• Transistor power rating and thermal resistance
• Transistor current handling capability and the transistor case size
• Leakage currents, mainly Icbo and Iebo in a transistor
• Transistor frequency response and /or switching times.
• Transistor current gain (HFE and hfe)
• Temperature parameter variation of a transistor
• Collector-emitter saturation resistance of a transistor
• h-parameters of a transistor for linear applications

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