Tunnel Diodes and Back Diodes from AMS
Product Announcement from American Microsemiconductor, Inc.
A tunnel diode is a semiconductor diode with a negative resistance region that allows very fast switching speeds, up to 30 GHz. The operation of the tunnel diode depends upon a quantum mechanic principle known as "tunneling" wherein the intrinsic voltage barrier (0.3 Volt for Germanium Diodes and 0.7 Volt for Silicon Diodes) is surmounted by high doping levels (introduced during the diffusion manufacturing process). This enhances tunneling and in turn, fast switching and low reverse breakdown voltage.
Specifications for Tunnel Diode
- Peak Voltage (Vp) of the tunnel diode
- Tunnel Diode Peak Current (Ip)
- Valley Voltage (Vv) of the tunnel diode
- Tunnel Diode Valley Current (Iv)
A back or backward diode is a tunnel diode with a suppressed Ip and so more closely approximates a conventional diode characteristics. In a Back Diode, the Reverse Breakdown Voltage (VBR) is lower than the Forward Voltage(VF) and so the VBR voltage characteristic is used as the forward direction of the diode and the positive characteristic (VF) is used as the negative diode terminal, hence its name, back diode.
Here are few Tunnel Diodes American Microsemiconductor Supplies:
- 1N2941, 1N2969, 1N2969A, 1N3149, 1N3150, 1N3561, 1N3712, 1N3713, 1N3714, 1N3716, 1N3717, 1N3718, 1N3721, 1N3849, 1N4397, 1N4397A 1N4398,
- 40567, 40568, 40571,TD262A, TD263B, TD265A, TD715
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