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Future Electronics - IRFB4127PbF with TrenchFET Gen 6 Technology

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The IRFB4127PbF features TrenchFET Gen 6 Technology. This 200Volt, 76Amp N-channel device in the TO-220 package, features maximum on-resistance of 20 milliohms at a 10-V gate drive voltage. Specifically designed for applications such as:

  • Power supplies
  • High power DC motors
  • Inverters
  • Power tools

Features and benefits include:

  • Improved gate, avalanche and dynamic dV/dt ruggedness
  • Fully characterized capacitance and avalanche SOA
  • Enhanced body diode dV/dt and di/dt capability
  • Qualified to industrial grade and MSL1

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