CoolSiC™ Schottky diode 650 V G6

Product Announcement from Infineon Technologies AG


The CoolSiC™ generation 6 is the leading edge technology in SiC Schottky Barrier diodes, fully leveraging all advantages of SiC over silicon. The Infineon proprietary diffusion soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system.

The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Qc x VF). The CoolSiC™ generation 6 diodes complement Infineon’s 600 V and 650 V CoolMOS™ 7 families, meeting the most stringent application requirements in this voltage range.

Features

  • The lowest VF: 1.25 V
  • Best-in-class figure of merit (Qc x VF)
  • No reverse recovery charge
  • Temperature independent switching behavior
  • High dv/dt ruggedness
  • Optimized thermal behavior