ILD2735M120 High Power Pulsed Transistor
Product Announcement from Integra Technologies, Inc.
Integra Technologies demonstrates the advantages of LDMOS technology in pulsed radar applications.
The high power pulsed transistor part number ILD2735M120 is designed for S-Band radar applications operating over the 2.7 - 3.5 GHz instantaneous frequency band. Under 300us / 10% pulsing conditions it supplies a minimum of 120 watts of peak output power with 8-9dB gain typically. The ILD2735M120 will be released and available for sampling in Q4 of 2010.
Maximum reliability is achieved through all-gold metal contacts, wire-bonding and package.
Please feel free to click on the hyperlinks below to access the complete datasheet for this or any of the other applicable devices.
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