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ILD2735M120 High Power Pulsed Transistor

Product Announcement from Integra Technologies, Inc.

ILD2735M120 High Power Pulsed Transistor-Image

Integra Technologies demonstrates the advantages of LDMOS technology in pulsed radar applications.

The high power pulsed transistor part number ILD2735M120 is designed for S-Band radar applications operating over the 2.7 - 3.5 GHz instantaneous frequency band. Under 300us / 10% pulsing conditions it supplies a minimum of 120 watts of peak output power with 8-9dB gain typically. The ILD2735M120 will be released and available for sampling in Q4 of 2010.

Maximum reliability is achieved through all-gold metal contacts, wire-bonding and package.

Please feel free to click on the hyperlinks below to access the complete datasheet for this or any of the other applicable devices.

Recent Integra Product Bulletins:

DMOS S-Band Transistors: ILD2731M200 , ILD3135M180

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