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The ims ANX series of thick film high power chip terminations on aluminum nitride is ideal for most applications requiring high power dissipation in a small size package. AlN is an ideal replacement for BeO as it has very high power dissipation with no potential environmetal hazards. The ihXlr designation in each series is a variable that allows for specifying the termination metalization. Please see the ordering information on the back for instructions. Thick film technology provides a stable resistor at a very affordable price. These chip resistors have the following features:

· High stability thick film resistor element

· AlN substrate material

· Au (gold) terminations for wirebonding or epoxy attachment

· PtAg (platinum silver) terminations for epoxy or solder attachment

· PtAg (platinum silver) with solder coating for solder attachment

· Standard tolerance 5%, other values available

· Available in bulk or on tape and reel

Key Features:

· Very high power dissipation

· Thick film technology

· AlN substrate material

· Standard resistance value 50 ohms

· Standard tolerance 5%

· Tight TCRs