MIDAC Corporation has developed a fast , highly sensitive FTIR spectrometer to measure both contaminant concentrations at very low levels and process gases at very high levels in silicon and semiconductor FAB plants. The system avoids the problems of saturation, long measurement time, and high maintenance cost associated with gas chromatography instruments. A liquid nitrogen- free FTIR equipped with a short path, low volume 90cc sample cell, the system is designed to measure hydrogen chloride (HCl) contamination from than 15 ppmv to as high as percent levels simultaneously with other process gases including trichlorosilane (SiIHCl3), dichlorosilane (SiH2Cl2 ), monochlorosilane (SIH3Cl ), silane (SiH4), and silicon tetrachloride (SiCl4). Concentrations for process gases range from <1ppmv levels to percent levels. Lower detection limits may be achieved with different detectors or pathlengths upon request. Systems may be used with fluorinated process gas compounds and contaminants such as nitrogen trifluoride (NF3) and hydrogen fluoride (HF). Moisture or other contaminants may also be measured. Sample matrix balance gases may H2 or any noble gas. The system is designed to operate automatically as many as 40 sample lines with user defined sequences. All wetted system parts are process gas compatible. Safety interlocks and password protection are included in the process gas software. Accuracy is in the +-2% range.
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