Planar Diffused IR Suppressed Photodiodes

Planar Diffused IR Suppressed Photodiodes from OSI Optoelectronics.

Generally sensitive between 200 to 1100nm these detectors are typically packaged with quartz or UV transmissive glass window. They exhibit low dark current and can be reverse biased for lower capacitance and faster rise time performance.

Planar diffused structure (UV-D Series) UV enhanced photodiodes show significant advantages over inversion layer devices, such as lower capacitance and higher response time. These devices exhibit linearity of photocurrent up to higher response time. The devices exhibit linearity of photocurrent up to higher light input power compared to inversion layer devices. They have relatively lower responsivities and quantum efficiencies compared to inversion layer devices.

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About OSI Optoelectronics. Light Sensing Ideas.

With more than 30 years of combined experience in the field of optoelectronics and two world-class manufacturing facilities in India and Malaysia, we continue to put forth excellent engineering solutions aligned with efficient manufacturing to meet high-volume production requirements.

As one of the largest manufacturers of standard and custom photodiodes and optical sensors in the United States, we deliver engineering design support and manufacturing capabilities that include but are not limited to:

Capabilities

• Commercial and Military Standard
• X-ray products (CT scanner, Security System, Industrial
  Inspection Apparatus
• Opto Assembly (Optical switches, LED's, cable assemblies)

• Medical products (medical probes and analyzers)
• Telecom and Data-com applications (SONET/SDH
  application and fiber coupled assemblies)
• PCB Assembly, Sub-System Assembly, Full system assembly (Box-Build)