ROHM Silicon Carbide Schottky Diodes
Product Announcement from ROHM Semiconductor USA, LLC
The SCS1xxAGC series of high-performance silicon carbide (SiC) Schottky barrier diodes (SBD) offer industry-leading low forward voltage and fast recovery time, leading to improved power conversion efficiency in applications. Low forward voltage is maintained over a wide operating temperature range, resulting in ultra-low switching loss. In addition, the diodes feature a breakdown voltage of 600V - impossible to achieve in silicon-based SBDs.
Features include: Lower forward voltage and faster recovery time than Si fast recovery diodes; High breakdown voltage; Low power loss; High operating temperature; Superior thermal conductivity; and Highest current rating at 600 V (a true 600 V/20 A SBD, not dual 2x10 A)
Ideal applications include: PFC/power supplies, solar panel inverters, uninterruptible power supplies, and air conditioners.