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Rogue Valley Microdevices is please to offer you the option of Dry Chlorinated Thermal Oxidation. Our Dry Chlorinated Thermal Oxidation is recommended for use in MOS and other active device fabrication processes. Using Dry Chlorinated Thermal Oxide can help your devices to perform to it's highest potential by eliminating metal ions.
Metal ions are detrimental to MOS devices because they will have a negative effect on the insulating properties of the dielectric.
We also recommend adding a Forming Gas Anneal after oxidation to passivate dangling bonds. Dangling bonds at the silicon interface can have an effect on the insulating properties of your oxide. Adding a Forming Gas Anneal will insure that you are the receiving the maximum benefit of your Dry Chlorinated Oxide.
Rogue Valley Microdevices offers the opportunity to work with their in-house engineering department to customize a deposition process that meets customer design requirements. In many cases the temperature, ramp rates and gas flows can be modified to achieve the results needed.
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We also carry a wide selection of bare silicon wafers for your convenience.
Rogue Valley Microdevices offers the following Thermal processing:
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About Rogue Valley Microdevices, Inc.:
Founded in 2003, Rogue Valley Microdevices is the first company to establish a microelectronics manufacturing facility in beautiful Southern Oregon. Headquartered in Medford Oregon, we have quickly established ourselves as one of the premier Thin Films Foundries in the United States by providing our customers with great quality, customer service, and engineering support.
Our manufacturing facility contains processing equipment capable of volume manufacturing yet flexible enough to accommodate wafer sizes from 50mm to 200mm. We offer a variety of processes, including Low Stress LPCVD Nitride, PECVD Oxide, PECVD Nitride, PECVD Silicon Carbide, Thermal Oxidation, Chlorinated Oxidation, N2/H2 Annealing, and a variety of Metal films to satisfy our customers' needs.