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Rogue Valley Microdevices, Inc. - PECVD Silicon Carbide (SiC) Film for 2"-12" wafers

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Rogue Valley Microdevices is pleased to offer PECVD Silicon Carbide. This highly durable thin film can be deposited alone or within stack of PECVD Oxide and/or Nitride films. PECVD Silicon Carbide is the perfect choice for use as a hard mask for bulk micromachining. Rogue Valley Microdevices process all wafers and films in-house at our Medford, Oregon facility.

Rogue Valley Microdevices PECVD Silicon Carbide Film offers the following:

  • High thermal conductivity
  • High mechanical strength
  • High chemical inertness
  • Resistance to etching with HF, KOH and TMAH
  • Easily etched with CF 4 /SF 6 based dry etching
  • Compressive stress

The following PECVD Films are also available at Rogue Valley Microdevices:

  • Silicon Dioxide
  • Carbon doped Silicon Oxy-Nitride
  • Silicon OxyNitride
  • Silicon Nitride
  • Silicon Oxy-Nitride
  • Low Stress Silicon Silicon Nitride
  • Silicon Carbide
  • Amorphous Silicon

We also carry a wide selection of bare silicon wafers for your convenience.

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About Rogue Valley Microdevices, Inc.:

Founded in 2003, Rogue Valley Microdevices is the first company to establish a microelectronics manufacturing facility in beautiful Southern Oregon. Headquartered in Medford Oregon, we have quickly established ourselves as one of the premier Thin Films Foundries in the United States by providing our customers with great quality, customer service, and engineering support.

Our manufacturing facility contains processing equipment capable of volume manufacturing yet flexible enough to accommodate wafer sizes from 50mm to 200mm. We offer a variety of processes, including Low Stress LPCVD Nitride, PECVD Oxide, PECVD Nitride, PECVD Silicon Carbide, Thermal Oxidation, Chlorinated Oxidation, N2/H2 Annealing, and Metal films to satisfy our customers' needs.

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