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TriQuint Semiconductor is an R&D and manufacturing leader specializing in high-power, high-frequency wireless applications. Our key power technologies include Gallium Nitride, Gallium Arsenide (GaAs) and RF LDMOS. GaN is known for its ability to handle greater power densities, be more rugged and handle ESD better than other semiconductors. Talk with a high-performance leader when deciding what technology is best suited to your application.

Choosing GaN
The performance advantages of Gallium Nitride technology make it ideal for applications that can benefit most from its power handling, ruggedness, wideband performance and superior ESD resistance: characteristics that make GaN ideal for wireless communications, defense and aerospace requirements.

At the same time, various applications can be well-served by mature, incumbent GaAs high-performance technology. As a GaAs and GaN leader, TriQuint is a great resource for determining which product or process best suits your needs.

Which process technology is best for my application?
1. My application requires 1W output power in the 3-6GHz range. Is GaN the right choice for me? GaN was developed for high power amplifiers through 20GHz. For 6V, 9V or 12V applications up to 1.5W output power, the best and most cost effective choice could be one of our 100mm GaAs pHEMT processes.

2. I'm looking for highly linear performance in a wireless base station application. I understand GaN is generally more linear than GaAs. Is that true? Generally speaking, yes. For example: Comparing 0.25µm GaN with the same FET periphery as 0.25µm pHEMT, the GaN devices will have a higher intercept point than GaAs – However, tell TriQuint about how you define 'linearity' for your application. What are the load conditions and what is the quiescent current? We can point you toward the best value process.

3. I've got to have better PAE than the 30% we've typically achieved with LDMOS RF transistors. I understand GaN PAE is exceptional. What's the best choice? GaN PAE is better than GaAs when comparing similar devices. PAE can be 50% or more. If your base station or other design could benefit from wideband performance as well as much higher PAE, ask about our PowerBand™ family that delivers 45% to 50% PAE across 2GHz or more bandwidth. GaN-based PowerBand™ devices will be available later in 2009. The more you know about your exact performance requirements the faster we can get you started with the right process.

4. Is TriQuint's process designed to be competitive with lower-frequency, higher-power GaN? TriQuint seeks to serve the high-power, high-frequency GaN market since the applications that can benefit most from GaN's inherent performance advantages are typically both high-power and high-frequency. We offer excellent lower-power, lower-frequency alternatives, including the industry's largest selection of GaAs processes and standard products.

View TriQuint's Process Comparison charts.