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TUNNEL DIODE

A tunnel diode is a semiconductor diode with a negative resistance region that allows very fast switching speeds, up to 10 GHz. The operation of the tunnel diode depends upon a quantum mechanic principle known as "tunneling" wherein the intrinsic voltage barrier (0.3 Volt for Germanium tunnel diodes and 0.7 Volt for Silicon tunnel diodes junctions) is surmounted due to high doping levels (introduced during diffusion), which enhances tunneling and in turn, fast switching.

Specifications for Tunnel Diode

• Peak Voltage (Vp) of the tunnel diode
• Tunnel Diode Peak Current (Ip)
• Valley Voltage (Vv) of the tunnel diode
• Tunnel Diode Valley Current (Iv)

BACK DIODE

A back or backward diode is a tunnel diode with a suppressed Ip and so more closely approximates a conventional diode characteristic. In a Back Diode, the negative voltage characteristic is used as the forward direction of the diode and the positive characteristic is used as the negative diode direction, hence its name.

Here are few Tunnel Diodes American Microsemiconductor Supplies:

• 1N2941, 1N2969, 1N2969A, 1N3149, 1N3150, 1N3561, 1N3712, 1N3713, 1N3714, 1N3716, 1N3717, 1N3718, 1N3721, 1N3849, 1N4397, 1N4397A 1N4398,
• 40567, 40568, 40571,TD262A, TD263B, TD265A, TD715

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