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ROHM Semiconductor USA, LLC

ROHM's ground isolation amp (BA3121F) is compatible with compact external capacitors and efficiently eliminates problems caused by wiring resistance along with noise generated by peripheral circuits. Additional features include low distortion and high common mode rejection. Read more...

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Qorvo (TriQuint + RFMD)

The QPA9119 is a high linearity driver amplifier in a low-cost, RoHS compliant, surface mount package. This InGaP/GaAs HBT delivers high performance across a broad range of frequencies with +44 dBm OIP3 and +27.2 dBm P1dB while only consuming 130 mA quiescent current. All devices are 100% RF and DC tested. Read more...

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Qorvo (TriQuint + RFMD)

The TQL9092 is a flat-gain, high-linearity, ultra-low noise amplifier in a small 2 x 2 mm surface-mount package. The LNA provides a gain flatness of 2 dB (peak-to-peak) over a wide bandwidth from 1.5 to 3.6 GHz. Read more...

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Qorvo (TriQuint + RFMD)

TriQuint's TGA2975-SM is a packaged MMIC power amplifier which operates from 2.7 to 3.5 GHz. The TGA2975-SM is designed using TriQuint's TQGaN25 0.25-um GaN on SiC process. Read more...

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Qorvo (TriQuint + RFMD)

TriQuint's TGA2830-SM is a packaged MMIC power amplifier which operates from 2.7 to 3.5 GHz. The TGA2830-SM is designed using TriQuint's TQGaN25 0.25-um GaN on SiC process. Read more...

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Qorvo (TriQuint + RFMD)

The RFPD3220 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT die and GaN HEMT die, has high output capability, and operates from 45MHz to 1218MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. Read more...

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Qorvo (TriQuint + RFMD)

The RFPD3210 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT die and GaN HEMT die, has high output capability, and operates from 45MHz to 1218MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. Read more...

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Qorvo (TriQuint + RFMD)

Qorvo, Inc. a leading provider of RF solutions for mobile, infrastructure and aerospace/defense applications, announced a family of hybrid gallium nitride (GaN)/gallium arsenide (GaAs) power amplifiers optimized to extend the reach and address the explosion of higher data throughput required for the point-to-point radio link market. Read more...

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