New Yorker Electronics Co., Inc.

Vishay Siliconix New SUM/SUP 70040E MOSFETs Available through New Yorker Electronics

Vishay Super 12 Product Delivers Lowest Values of On-Resistance in the Industry for 100V MOSFETs with 4.5V Ratings Read more...

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Richardson RFPD

Microsemi APT30SM120JCU2

Features:

> Silicon Carbide (SiC) Power MOSFET - Low RDS(on) - High temperature performance

> SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF

> ISOTOP® Package (SOT-227)

> Very low stray inductance

... Read more...

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Richardson RFPD

The Microsemi APT70SM70J is a 700V, 43A, 75mOhm silicon carbide n-channel power MOSFET module in a SOT-227/ISOTOP package. Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications.

SiC MOSFET features include:

• Low on... Read more...

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Karl Kruse GmbH & Co. KG

Designed for audio, video and high frequency applications, the SST211 Series is a high speed, ultra low capacitance SPST analog switch. Read more...

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Karl Kruse GmbH & Co. KG

Are you looking for a replacement for obsolete Mosfet BSS83,215 ?

We have the solution for you , 1:1 cross from Calogic SST213-LF.

Samples available, pls click here:

http://www.kruse24.com/de/semiconductors/diodes-rectifier1/mosfet/sst213-lf Read more...

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ROHM Semiconductor USA, LLC

ROHM has announced the development and mass production of a SiC MOSFET that adopts the world’s first trench structure. Compared to existing planar-type SiC MOSFETs, ON resistance is reduced by 50% in the same chip size, making it possible to significantly decrease power loss in a variety of equipment. Read more...

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