> Silicon Carbide (SiC) Power MOSFET - Low RDS(on) - High temperature performance
> SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF
> ISOTOP® Package (SOT-227)
> Very low stray inductance... Read more... More Product Announcements from Richardson RFPD
The Microsemi APT70SM70J is a 700V, 43A, 75mOhm silicon carbide n-channel power MOSFET module in a SOT-227/ISOTOP package. Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications.
SiC MOSFET features include:
• Low on... Read more...More Product Announcements from Richardson RFPD
Designed for audio, video and high frequency applications, the SST211 Series is a high speed, ultra low capacitance SPST analog switch. Read more...More Product Announcements from Karl Kruse GmbH & Co. KG
Are you looking for a replacement for obsolete Mosfet BSS83,215 ?
We have the solution for you , 1:1 cross from Calogic SST213-LF.
Samples available, pls click here:
ROHM has announced the development and mass production of a SiC MOSFET that adopts the world’s first trench structure. Compared to existing planar-type SiC MOSFETs, ON resistance is reduced by 50% in the same chip size, making it possible to significantly decrease power loss in a variety of equipment. Read more...More Product Announcements from ROHM Semiconductor USA, LLC