Newly introduced, the IGN2731M200 S-Band radar transistor is capable of producing more than 60% efficiency. This GaN on SiC HEMT transistor is designed for the 2.7-3.1GHz instantaneous operating frequency band and offers POUT-PK = 200W @ 300us/10%/44V. Read more...More Product Announcements from Integra Technologies, Inc.
Description of bipolar transistor The transistor is primarily used as a current amplifier. When a small current signal is applied to the base terminal of a bipolar transistor, it is amplified in the collector circuit. This current amplification is referred to as hfe or beta and equals Ic/Ib. As with all semiconductors, breakdown voltage of a transistor is also a desi... Read more...More Product Announcements from American Microsemiconductor, Inc.