Large Output Current General Purpose Power Operational Amplifiers LH0021 / LH0021C 1.0 Amp - Capable of output current above 1 Amp at voltage levels of ± 12 Volts. LH0041 / LH0041C 0.2 Amp - Capable of output currents of 200 mA at voltage levels of ± 14 Volts. Both inputs Read more...More Product Announcements from Amsyx
Integra's line of VDMOS common source RF power transistor products boast unparalleled performance in the industry. They are designed for rugged operation in various broadband communication and broadcast applications. All gold refractory metal contact on silicon chips and the associated gold wire bonds offer superior reliability Read more...More Product Announcements from Integra Technologies, Inc.
Infineon's RF Transistors provide the designer the best possible performance, superior flexibility and price/performance ratio. These are widely used for new emerging wireless applications, where the system specification is not yet firmly established. The BFxx Low Noise Amplifiers (LNAs) include devices suitable for use from AM over VHF/UHF up to 14GHz. These are the latest LNA innovatio... Read more...More Product Announcements from Mouser Electronics, Inc.
American Microsemiconductor Inc. (AMS) announces ready delivery of the MRF5176 power microwave transistor. This NPN Silicon transistor is designed for wideband large-signal driver and predriver amplifier stages. It features 15 Watts output and a 200-600 MHZ frequency range. The output Power is 15 Watts at 28 Volts, Vcc. Minimum Gain is 10 dB also at 28 Volts with an efficiency of 50%. ... Read more...More Product Announcements from American Microsemiconductor, Inc.
Achieves Breakthrough GaN-on-Diamond Results Enables high performance, low heat operation, significantly smaller transistors TriQuint has achieved breakthrough results in gallium nitride (GaN) research by demonstrating advanced GaN-on-diamond processes and manufacturing techniques that can substantially enhance thermal management.. Read more...More Product Announcements from TriQuint
T1G6003028-FL 30W, 28V, DC-6GHz GaN RF Power Transistor The TriQuint T1G6003028-FL is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint's proven 0.25 um process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potential... Read more...More Product Announcements from TriQuint
T1G4003532-FS / -FL Features Operates at 32V for improved overall circuit efficiency Eared & earless packages for assembly flexibility High compressed gain, 14dB typical at 3.5 GHz, leads competition by >3dB >33W compressed output power >53% efficiency at 3.5 GHz Exceptional performance from DC-3.5 GHz<.../li> Read more...More Product Announcements from TriQuint