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Richardson RFPD

The GS66508T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. Read more...

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Richardson RFPD

The GS61004B is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown, high switching frequency and high temperature operation. Read more...

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Richardson RFPD

The GS66516T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. Read more...

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Qorvo

Qorvo's QPD1000 is a 15W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30MHz to 1.215 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. Read more...

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Qorvo

Introducing six new 50 Volt gallium nitride (GaN) transistors designed to optimize power performance for commercial and defense radar, communications systems and avionics. Qorvo's new family of 50V GaN transistors offers significant operational and system cost savings from greater system-level efficiency. Read more...

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Qorvo

The TriQuint TGF3020-SM is a 5W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 4.0 to 6.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. Read more...

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Fuji Electric Corp. of America

Who should attend?
Engineers and industry professionals interested in learning how to use advanced power semiconductor in power conversion systems, as well as students and other industry professionals who want to understand and apply the latest IGBT technologies Read more...

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ROHM Semiconductor USA, LLC

ROHM's high voltage resistance PrestoMOS™ series is ideal for power supplies with integrated inverter. High-speed switching combined with an internal diode with high trr characteristics result in greater efficiency and lower loss while contributing to smaller designs. New package types, including the CPT3 (D-PAK) and LPT (D2-PAK) are currently being developed. Read more...

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TT Semiconductor, Inc.

TT1300 Series Matched Transistor Arrays from TT Semiconductor feature low noise: 0.75 nV/ √Hz... Read more...

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