The TriQuint TGF3020-SM is a 5W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 4.0 to 6.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. Read more...More Product Announcements from Qorvo
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Engineers and industry professionals interested in learning how to use advanced power semiconductor in power conversion systems, as well as students and other industry professionals who want to understand and apply the latest IGBT technologies Read more...
ROHM's high voltage resistance PrestoMOS™ series is ideal for power supplies with integrated inverter. High-speed switching combined with an internal diode with high trr characteristics result in greater efficiency and lower loss while contributing to smaller designs. New package types, including the CPT3 (D-PAK) and LPT (D2-PAK) are currently being developed. Read more...More Product Announcements from ROHM Semiconductor USA, LLC
TT1300 Series Matched Transistor Arrays from TT Semiconductor feature low noise: 0.75 nV/ √Hz... Read more...More Product Announcements from TT Semiconductor, Inc.
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The 300A rated current makes the BSM300D12P2E001 suitable for high power applications such as large-capacity power supplies for industrial equipment. Read more...More Product Announcements from ROHM Semiconductor USA, LLC
ROHM has recently announced the adoption of its SCT2080KE Silicon Carbide MOSFET in new, ultra-high voltage pulse generators (SiC-Pulser Series) launched by Fukushima SiC Applied Engineering Inc Read more...More Product Announcements from ROHM Semiconductor USA, LLC
Power electronics manufacturer Fuji Electric has announced the introduction of a new Silicon Carbide Hybrid Module, which allows for smaller, lighter system packages due to its higher switching speed and increased efficiency over full Silicon Power Modules. Read more...More Product Announcements from Fuji Electric Corp. of America
The 9110 is a BiC/DMOS integrated circuit designed for use as a high-performance switchmode controller. It is available in ceramic packages with an operating temperature of 200C. Read more...More Product Announcements from TT Semiconductor, Inc.
Infineon’s CoolMOS™ C7 600 V superjunction MOSFET offers a 50 percent reduction in turn-off losses, offering a GaN-like level of performance in PFC, TTF and other hard-switching topologies. Read more...More Product Announcements from Infineon Technologies AG