Infineon Technologies AG

PrimePACK™ Combines latest IGBT5 with .XT Interconnection Technology for Higher Lifetime and Power Density Read more...

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Infineon Technologies AG

Exceptional robustness of the 2EDN7524 EiceDRIVER™ against ground bounce for system reliability is ensured through the ability of the driver ICs to handle up to -10 VDC at the control and enable inputs. Read more...

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Infineon Technologies AG

Infineon’s CoolMOS™ C7 600 V superjunction MOSFET offers a 50 percent reduction in turn-off losses, offering a GaN-like level of performance in PFC, TTF and other hard-switching topologies. Read more...

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Infineon Technologies AG

Infineon’s Next Generation CoolMOS™ Delivers 50 Percent Improved Switching Losses; EiceDRIVER™ is Setting New Standards in System Robustness Read more...

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ROHM Semiconductor USA, LLC

ROHM has recently announced the adoption of its SCT2080KE Silicon Carbide MOSFET in new, ultra-high voltage pulse generators (SiC-Pulser Series) launched by Fukushima SiC Applied Engineering Inc Read more...

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New Jersey Semi-Conductor Products, Inc.

Equip your business with the latest semiconductor technology on the market when you order the integrated circuits, diodes, and transistors from New Jersey Semiconductor Read more...

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New Jersey Semi-Conductor Products, Inc.

Today, transistors are the fundamental building block of electronic devices. They are critical in the functioning of modern electronic systems and have revolutionized the field of electronics. Read more...

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Qorvo (TriQuint + RFMD)

The TriQuint TGF3020-SM is a 5W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 4.0 to 6.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. Read more...

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Qorvo (TriQuint + RFMD)

DC-12GHz GaN Die Transistor Family consist of discrete GaN on SiC HEMT. Thy are designed using TriQuint's proven TQGaN25 production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. Read more...

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Qorvo (TriQuint + RFMD)

The TriQuint TGF3015-SM is a 10W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 3.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. Read more...

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