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Product Announcements: Transistors
| Product Announcements 1 - 10 of 13 | Next 3 results > |
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6-Pin Dip Optoisolators Transistor Output - 4N25
The 4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Most Economical Optoisolator Choice for Medium Speed, Switching Applications • Meets or Exceeds All JEDEC Registered Specifications (read more) |
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Offering the Broadest Range of Discrete Components
American Microsemiconductor - Serving the Semiconductor industry since 1970... Welcome to American Microsemiconductor Inc. For over 40 years we have been a world class semiconductor supplier. From inception, we have specialized in the semiconductor aftermarket and the custom component selection market, involving special testing to our customers requirements. Assuring our cu... (read more) |
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PHOTO TRANSISTORS L14G1, L14G2, 14G3
Photransistors L14G1,L14G2 and, L14G3 Has Fairchild, General Electric, QT, and Telefunken left you in the lurch for Phototransistors? Still waiting for shipment? Wait no more! Same day shipping from American Microsemiconductor. Finally , a dependable supplier of the Silicon Phototransistors. American Microsemiconductor Inc. is now supplying the L14G1, L14G2, and L14... (read more) |
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LOW NOISE GENERAL PURPOSE
LOW NOISE GENERAL PURPOSE TRANSISTORS from AMERICAN MICROSEMICONDUCTOR INC. The BC107 and BC108 are silicon planar epitaxial NPN transistors in TO-18 hermetic metal case. They are suitable for use in driver stages, low noise input stages and signal processing circuits of television receivers. Quick Links:
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HIgh Temperature Transistor Arrays
The TT Semiconductor 1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. They will operate up to a temperature of 200C. (read more) |
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Panasonic MOSFETs
The Metal-Oxide-Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals. (read more) |
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VHF-Band Pulsed Power Transistor
The high power pulsed transistor part number IDM165L650 is designed for VHF-Band systems operating at 125-167 MHz. Operating at a pulse width of 1ms with a duty factor of 20%, this dual MOSFET device supplies a minimum of 650 watts of peak pulse power at a fixed input power of 80 watts across the instantaneous operating bandwidth of 125-167 MHz. (read more) |
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Highly Efficient 18W GaN RF Power Transistor
T1G6001528-Q3 - 18W, 28V, DC-6 GHz, GaN RF Power Transistor The TriQuint T1G6001528-Q3 is a 18 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint's proven 0.25 µm production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimizatio... (read more) |
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ECOMOS Efficiently Handles Reduced Supply Voltages
The new ECOMOS series of n-channel and p-channel MOSFETs are designed to meet the prescribed operation at lower gate drive voltages. ROHM's advanced proprietary processing has produced devices that exhibit RDS(ON) values as much as 90% lower than comparable devices when operated at ultra-low 1.5V or 1.2V gate drive (VGS) voltages. (read more) |
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ILD2731M200 High Power Pulsed Transistor
The high power pulsed transistor part number ILD2731M200 is designed for S-Band systems operating from 2.7 to 3.1 GHz. Operating at a pulse width of 300us with a duty factor of 10%, this device supplies a minimum of 200 watts of peak pulse power across the instantaneous operating bandwidth of 2.7-3.1 GHz. The ILD2731M200 will be released and available for sampling in Q4 of 2010. (read more) |
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