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Products and processes for electronics design and innovations on solving practical problems with interconnect devices.
ROHM Semiconductor USA, LLC

ROHM's high voltage resistance PrestoMOS™ series is ideal for power supplies with integrated inverter. High-speed switching combined with an internal diode with high trr characteristics result in greater efficiency and lower loss while contributing to smaller designs. New package types, including the CPT3 (D-PAK) and LPT (D2-PAK) are currently being developed. Read more...

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Karl Kruse GmbH & Co. KG

Are you looking for a replacement for obsolete Mosfet BSS83,215 ?

We have the solution, for more infos pls click here:

http://www.kruse24.com/de/semiconductors/diodes-rectifier1/mosfet/sst213-lf Read more...

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Karl Kruse GmbH & Co. KG

Product Highlights

  • Channel Type: N-Channel
  • Drain-to-Source Voltage [VDSS]: 500V
  • Drain-Source On Resistance-Max: 100m Ohm
  • QG Gate Charge: 190nC
  • Rated Power Dissipation: 500W
Read more...

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ROHM Semiconductor USA, LLC

The 300A rated current makes the BSM300D12P2E001 suitable for high power applications such as large-capacity power supplies for industrial equipment. Read more...

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ROHM Semiconductor USA, LLC

ROHM has recently announced the adoption of its SCT2080KE Silicon Carbide MOSFET in new, ultra-high voltage pulse generators (SiC-Pulser Series) launched by Fukushima SiC Applied Engineering Inc Read more...

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Fuji Electric Corp. of America

Power electronics manufacturer Fuji Electric has announced the introduction of a new Silicon Carbide Hybrid Module, which allows for smaller, lighter system packages due to its higher switching speed and increased efficiency over full Silicon Power Modules. Read more...

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Qorvo

The TriQuint TGF3015-SM is a 10W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 3.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. Read more...

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Qorvo

The TriQuint TGF3020-SM is a 5W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 4.0 to 6.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. Read more...

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Infineon Technologies AG

Infineon’s CoolMOS™ C7 600 V superjunction MOSFET offers a 50 percent reduction in turn-off losses, offering a GaN-like level of performance in PFC, TTF and other hard-switching topologies. Read more...

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