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  • Modeling of SOI FET for RF Switch Applications
    to be. physics, such as the floating-body effect and the parasitic. accounted for. A typical GSM application requires the. BJT effect, to the switch linearity will also be discussed. switch 2nd and 3rd harmonics to be below -40dBm level at. Finally a hybrid model that combines PSP as the FET core
  • Large-signal Modeling of SiGe HBT for PA Applications
    ) at applicable speed, PAs. To reveal the non-linear behavior of a transistor with. manufactured with Si bipolar junction transistors (BJT). respect to bias and power for PA applications, our. have only very limited success in the commodity. approach is to evaluate compact transistor models at. handset
  • Phase Locked Loop Systems Design for Wireless Infrastructure Applications
    with lower cost and smaller package size. Figure 3 Phase noise characteristics 1.5 to 2.4 GHz CMOS cross-coupled vs. discrete BJT. Type 2 is based on multi chip module (MCM). This type has a few dies as well as discrete components on a. substrate. The die include VCO, PLL and varactors, while discrete
  • Characteristics of GaAs Spike Doped Collectors
    Spike-doped collector designs have recently been studied in both Si BJT and GaAs HBTs as a way to improve the device linearity while still maintaining ruggedness. In this work, we present and discuss - for the first time - the very interesting output characteristics of these devices (unique Ic-Vce
  • Introduction to Analog Electronics
    Laboratories in New Jersey. This book also provides an introduction to the study of semiconductor devices such as PN-junction diodes, bipolar junction transistors (BJT), field-effect transistors (FET), and metal-oxide semiconductor field-effect transistors (MOSFET). Students will learn about performing
  • Bipolar Junction Transistors
    Bipolar junction transistors (BJT) are used in general-purpose applications. They consist of two sections of one type of semiconductor (N or P) around a middle slab of the other type. The junctions between the semiconductor sections cause an incoming weak electrical signal to be amplified. Bipolar
  • HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design
    This paper presents a methodology to. characterize and model BJT's mismatch behavior for RFIC design. A measurement technique based on the conventional S-parameter measurement is developed to measure the mismatch behavior at high frequencies (HFs). First, besides the typical de-embedding
  • Designing with HV Microcontrollers
    is significantly. MT2. MT. MT2. lower than a BJT. Avoiding a continuous base bias. current further reduces the load current on the system,. ILOA. LO D. A. ILOAD. Gat. Ga e. Gate. and lowering the ON voltage of the drive means that. more of the energy is actually delivered to the output. ITR. T IGGE. I. R.

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