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  • Modeling of SOI FET for RF Switch Applications
    . contributor to a FET switch at high-power levels. Secondly. the substrate itself is non-linear and sets the harmonic floor. Besides the substrate, the impact of other important SOI. physics, such as the floating-body effect and the parasitic. BJT effect, to the switch linearity will also be discussed
  • Characteristics of GaAs Spike Doped Collectors
    Spike-doped collector designs have recently been studied in both Si BJT and GaAs HBTs as a way to improve the device linearity while still maintaining ruggedness. In this work, we present and discuss - for the first time - the very interesting output characteristics of these devices (unique Ic-Vce
  • Introduction to Analog Electronics
    Laboratories in New Jersey. This book also provides an introduction to the study of semiconductor devices such as PN-junction diodes, bipolar junction transistors (BJT), field-effect transistors (FET), and metal-oxide semiconductor field-effect transistors (MOSFET). Students will learn about performing
  • Bipolar Junction Transistors
    Bipolar junction transistors (BJT) are used in general-purpose applications. They consist of two sections of one type of semiconductor (N or P) around a middle slab of the other type. The junctions between the semiconductor sections cause an incoming weak electrical signal to be amplified. Bipolar
  • HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design
    This paper presents a methodology to. characterize and model BJT's mismatch behavior for RFIC design. A measurement technique based on the conventional S-parameter measurement is developed to measure the mismatch behavior at high frequencies (HFs). First, besides the typical de-embedding
  • Designing with HV Microcontrollers
    is significantly. MT2. MT. MT2. lower than a BJT. Avoiding a continuous base bias. current further reduces the load current on the system,. ILOA. LO D. A. ILOAD. Gat. Ga e. Gate. and lowering the ON voltage of the drive means that. more of the energy is actually delivered to the output. ITR. T IGGE. I. R.
  • IR Remote Control Transmitter
    Technology Inc. DS01064A-page 3. AN1064. FIGURE 9: SCHEMATICS – BJT DRIVEN LED. VDD. VDD. GP0. GP3. R1. 22Ω. 206. IR. VSS. VDD. 0F. 1. LED. I. C. P. 51Ω. GP1. GP2. 2N3904. R3. 10k. R2. When a button press is detected, the program loads the. FIGURE 10: MODULATING CARRIER. appropriate address and data
  • Tutorial: The UJIT, CUJT, PUT, FLD, SUS, SBS, SCS.... Tutorial
    . Usually it doesn’t mean much unless your job or life depends upon it, and if it does (your job that is) this brings us to discrete semiconductor acronyms. We all know: BJT stands for bipolar junction transistor FET is Field Effect Transistor MOS is Metal Oxygen Silicon However, did you know that? UJT

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