Products & Services

See also: Categories | Featured Products | Technical Articles | More Information
Page: 1

Conduct Research Top

  • Modeling of SOI FET for RF Switch Applications
    . contributor to a FET switch at high-power levels. Secondly. the substrate itself is non-linear and sets the harmonic floor. Besides the substrate, the impact of other important SOI. physics, such as the floating-body effect and the parasitic. BJT effect, to the switch linearity will also be discussed
  • Characteristics of GaAs Spike Doped Collectors
    Spike-doped collector designs have recently been studied in both Si BJT and GaAs HBTs as a way to improve the device linearity while still maintaining ruggedness. In this work, we present and discuss - for the first time - the very interesting output characteristics of these devices (unique Ic-Vce
  • Introduction to Analog Electronics
    Laboratories in New Jersey. This book also provides an introduction to the study of semiconductor devices such as PN-junction diodes, bipolar junction transistors (BJT), field-effect transistors (FET), and metal-oxide semiconductor field-effect transistors (MOSFET). Students will learn about performing
  • Bipolar Junction Transistors
    Bipolar junction transistors (BJT) are used in general-purpose applications. They consist of two sections of one type of semiconductor (N or P) around a middle slab of the other type. The junctions between the semiconductor sections cause an incoming weak electrical signal to be amplified. Bipolar
  • HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design
    This paper presents a methodology to. characterize and model BJT's mismatch behavior for RFIC design. A measurement technique based on the conventional S-parameter measurement is developed to measure the mismatch behavior at high frequencies (HFs). First, besides the typical de-embedding

More Information Top

Lock Indicates content that may require registration and/or purchase. Powered by IHS Goldfire