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  • Modeling of SOI FET for RF Switch Applications
    . contributor to a FET switch at high-power levels. Secondly. the substrate itself is non-linear and sets the harmonic floor. Besides the substrate, the impact of other important SOI. physics, such as the floating-body effect and the parasitic. BJT effect, to the switch linearity will also be discussed
  • Characteristics of GaAs Spike Doped Collectors
    Spike-doped collector designs have recently been studied in both Si BJT and GaAs HBTs as a way to improve the device linearity while still maintaining ruggedness. In this work, we present and discuss - for the first time - the very interesting output characteristics of these devices (unique Ic-Vce
  • Introduction to Analog Electronics
    Laboratories in New Jersey. This book also provides an introduction to the study of semiconductor devices such as PN-junction diodes, bipolar junction transistors (BJT), field-effect transistors (FET), and metal-oxide semiconductor field-effect transistors (MOSFET). Students will learn about performing
  • HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design
    This paper presents a methodology to. characterize and model BJT's mismatch behavior for RFIC design. A measurement technique based on the conventional S-parameter measurement is developed to measure the mismatch behavior at high frequencies (HFs). First, besides the typical de-embedding

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