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Technical Books - Tunable Laser Diodes and Related Optical Sources, Second Edition -- ISBN: 9780471208167Supplier: SPIE
Description: Buus, Amann, and Blumenthal significantly expand the 1998 edition of Tunable Laser Diodes, which reflects the developments in the engineering and applications of the field. The authors cover essential subjects on tunable laser diodes, from theory to applications, as well as those of modern laserShow More
Description: in color twice a month and in hardcopy form in mostly black and white once every two months. Original contributions are welcome which relate significant advances or state-of-the-art capabilities in the theory, design, fabrication, application, or performance of -- Semiconductor optical devicesShow More
Technical Books - Voltage References:From Diodes to Precision High-Order Bandgap Circuits -- 9780470547038
Description: Abstract The foremost tutorial resource on the design of integrated voltage references, from theory to real-life practice. Voltage References covers the conceptual history and scope of practical design issues behind marketable and precision integrated voltage references. EffectualShow More
Standards and Technical Documents - Gas Measurement by TDLAS Peak Integration of Direct and Second Harmonic Signal - ANALYSIS 2012
Description: Tuneable Diode Laser Absorption Spectroscopy (TDLAS) is well suited for measuring gas concentrations by using direct absorption measurements or by wavelength modulation with second harmonic detection. This document summarises the basic theory for both techniques. It is well knownShow More
Supplier: Acopian Power Supplies
Description: An Acopian Redundant Power Package is installed by simply connecting the AC input and DC output terminals. All wiring (including isolation diodes, output monitor circuits, switches, meters, adjustments and connectors) has been done for you. Output Redundancy: Each Redundant Power Package contains
- Number of Outputs: 1
- Applications: Instrumentation
- Style: Enclosed, DIN Rail, Wall Mount, Cabinet
- Output Power: 0.5696 HP
Description: scattering instrumentation that employs a laser diode and a modern charge-coupled device (CCD) detector for the best possiblecombination of available technology. The CCD detector actually allows the Saturn DigiSizer® to capture a high-resolution, digital representation of the scattering pattern
- Measurement Type: Size
- Sample Type: Dispersion / Liquid (Emulsion, Suspension)
- Particle Size Range: 0.1000 to 1000 µm
- Technology / Operating Principle: Diffraction / Scattering
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Theory of Operation of Logarithmic Amplifiers
Theory of Operation of Logarithmic Amplification. In this technical note, we discuss some general principles relating to logarithmic amplification. First of all, no amplifier can produce a logarithmic transfer function over a dynamic range which includes an input signal level of zero, since log 0 = - . All logarithmic amplifiers must therefore specify a signal range over which they will "log". The classic log amp discussed in most introductory texts exploits the I-V characteristics of a diode... (read more)
Browse Logarithmic Amplifier Chips Datasheets for Anadyne
ROHM Semiconductor USA, LLC
DC/DC Converter IC for Industrial Equipment
withstand voltage input having built-in power MOSFET for switching. Efficiency improvement of power MOSFET is attempted by adoption of Nch-MOSFET at both upper and lower sides. Concerning this composition, the diode necessary for bootstrap for producing gate drive of upper-side Nch-MOSFET is also built-in. In addition, asynchronous rectification (diode rectification) system often used in high withstand voltage power application is not adopted but, instead, synchronous rectification system... (read more)
Browse DC-DC Converters Datasheets for ROHM Semiconductor USA, LLC
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Technical Reference: Why is The Semiconductor Device Called a Tunnel Diode?
With a standard germanium diode a potential barrier of 0.3 volts must be exceeded before the diode can conduct. However in a tunnel diode, according to quantum theory...
Solid State RF/Microwave Switch Technology: Part 2
In part 1 we discussed an. overview of RF/microwave. switch topologies, PIN. diode theory of operation, and. some simple PIN diode switch. implementations. In part 2 we. will discuss more complex PIN. diode switches, the theory of. operation of RF/microwave field. effect transistors (FETs
RF/Microwave Solid State Switches
) such as pseudomorphic. high electron mobility transistors. (pHEMTs), each of which offers relative. advantages and disadvantages. Part 1 of. this article includes an overview of RF/. microwave switches, theory of operation. for PIN diodes and some representative. PIN diode switch circuits. In Part 2 we
Analysis and Design of Vertical Cavity Surface Emitting Lasers - Preface
of the author s knowledge, the most appropriate theories have been chosen to model the specific topic of VCSELs. In Chapters 3 and 4, theoretical models have been developed to analyze the modal profile and polarization, respectively, of VCSELs. The most popular structure of VCSELs is a cylindrical
IR Remote Control Transmitter
AN1064 IR Remote Control Transmitter receiver. The IR light then travels through the air and is Author: Tom Perme detected at the receiver by a photo-diode. The photo- John McFadden diode is often contained in a complete module which Microchip Technology Inc. demodulates the modulated signal
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Microwave Circuit Design Using Linear and Nonlinear Techniques 2nd Edition Complete Document
This is a fundamental equation in pin diode theory and design.
Y. Klinger and L. Solymar, H,,-to-H,, mode transducer, 412 Early, J. M., p-n-p variable-capacitance- diode theory , 724 - uith others, transistor internal parameters, 2415 Easley, J. W.,and R. R. Blair, fast neutron bombard- ment of Esaki diodes …
Further Results in the General Theory of Barrier Layer Rectifiers
Experiments on the variation of zero resistances with temperature have recently been reported (Billig and Ridout 1951), and been interpreted on the assumption . in all cases (diffusion and diode theory ).
The current source also controlled by the voltage v irev describes the - in the ideal diode theory not considered - strong increase of the locking current in the region of the breakdown voltage of the diode.
Physics of Semiconductor Devices
J. A. Copeland, "LSA Oscillator Diode Theory ," J. Appl. Phys., 38, 3096 (1967).
PN Diode Theory . . . . . . . . . . . . . . . . . . . . . . . . .
Scientific program and abstracts
2P22 Hybrid Ion Diode Theory and Computations J. P. Quintenz, C. W. Mendel, Jr., P. A. Miller, J. T. Crow, L. P. Mix, S. E. Rosenthal .
Filling of a local-level at a metal-semiconductor contact
When the level is at the semiconductor-gap boundary the above depen- dence of the coefficients Cin and Cni is only retained in the case of diode theory for the barrier layer and the dependence of the Cip and Cpi coefficients for …
Index to Wireless Engineer Abstracts and References - Author Index
… 1120 Swafford, J. E., with J. M. Benson, Raydist systems for radiolocation, 1431 Swann, S. A., a.c. distribution in solid cylindrical con- ductor, 3520 Swann, W. F. G., electret behaviour, 107 Swanson, J. [A.l, diode theory in light of hole …
A stimulated inelastic tunneling theory of negative differential resistance in metal-insulator-metal diodes
11 For an excellent paper covering the state of the artof MIM diode theory and construction, including an extensive bibliography, see M. Heiblum, S. Wang, J. R. Whinnery, and T. K. Gustafson, “Characteristics of integrated MOMjunctions at dcand at optical frequencies,” …