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Part # Distributor Manufacturer Product Category Description
MOSFET P CHANNEL RFP30P05 National Microchip Not Provided Not Provided Not Provided
P8730 AmericanMicroSemi AMS Transistors:MOSFETs and TempFETs:MOSFET Arrays:N-Channel:Enhancement p8730 p8730 pdf p8730 datasheetp8730 is on sale at our online store for 12.78915. Call 973-377-9566 100% Satisfaction Gauranteed. American Microsemiconductor Inc.FREE UPS ground shipping or more. Also get special discount on International orders. AM
75542P Radwell Intersil Components, IC Chip MOSFET 75AMP 80V N-CHANNEL ULTRAFET
75332P3 ASAP Semiconductor FAIRCHILD Not Provided 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
FDG312P Newark / element14 FAIRCHILD SEMICONDUCTOR Not Provided FAIRCHILD SEMICONDUCTOR - FDG312P - P CHANNEL MOSFET; -20V; 1.2A; SC-70
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Conduct Research Top

  • Using Low Resistance MOSFETs as Load Switches
    a resistor and therefore Ohms law applies; when turned off, the MOSFET appears as a diode and as such blocks current in one direction with a very high resistance (if reverse protection is required, an additional MOSFET or blocking diode is required). P-channel MOSFETs are normally used
  • Application Note: Output Inductor Selection for the AAT115X Series Buck Converter
    input. The AAT115X peak current mode control loop senses the current flowing through the high-side P-channel MOSFET and compares it to the output of the voltage loop error amplifier. Sufficient sensed current slope is important for good noise immunity and a wide duty cycle dynamic range. Moreover
  • MICRO:Defect/Yield Analysis
    features dual gate oxides (5.5 and 16 V), complementary N- and P-channel MOSFETs with 5-, 16-, and 30-V capabilities, vertical NPN and lateral PNP bipolar transistors, a variety of passive elements, and an NMOS device rated for 40-V operation. The process is suitable for a wide array of smart-power
  • AN211A: Field Effect Transistors in Theory and Practice, Courtesy of Motorla
    . The other terminal is called the drain terminal. Current flow between source and drain is related to the drain-source voltage by the resistance of the intervening material. In Figure 1b, p-type regions have been diffused into the n-type substrate of Figure 1a leaving an n-type channel between the source

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