Products/Services for P Channel MOSFET Tutorial

  • RF MOSFET Transistors-Image
    RF MOSFET Transistors - (44 companies)
    ...in the semiconductor substrate. There are two basic types of MOSFET RF transistors: N-channel and P-channel. N-channel devices conduct through electrons. P-channel devices conduct through "holes ". With both types of devices, the polarity of the electric... Search by Specification | Learn More
  • Metal-Oxide Semiconductor FET (MOSFET)-Image
    Metal-Oxide Semiconductor FET (MOSFET) - (194 companies)
    ...structure. Both MOSFET types described below can be of p- or n-type (also known as p-channel and n-channel), but n-channel devices are the most prevalent. Type. MOSFETs can operate in two mode types: depletion mode (D-MOSFET) or enhancement mode... Search by Specification | Learn More
  • Power MOSFET-Image
    Power MOSFET - (173 companies)
    ...a double-diffusion process. A VDMOS diagram, showing its vertical construction and N+ and P+ wells. Image credit: Wikipedia. Despite the predominance of VDMOS, some lateral power MOSFETs are still used in specialized applications. Power MOSFET operation... Search by Specification | Learn More
  • Gate Drivers-Image
    Gate Drivers - (87 companies)
    Gate drivers are electronic circuits that apply correct power levels to metal-oxide field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs). With power-MOSFETs, gate drivers can be implemented as transformers, discrete... Search by Specification | Learn More
  • Junction Field-Effect Transistors (JFET)-Image
    Junction Field-Effect Transistors (JFET) - (68 companies)
    Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region. How to Select Junction Field Effect... Search by Specification | Learn More
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    Switch Mode Transformers - (54 companies)
    Switch mode transformers (switching transformers) are used mainly in switching power supplies and DC-DC converters. They provide a storage element for transferring energy from input to output in discrete packets as required in switching power supplies, regulators and converters. Search by Specification | Learn More
  • No Image Available
    Transistors - (658 companies)
    ...on the composition and consequently the polarity of the transistor. Bipolar Transistors. Bipolar transistors, also called bipolar junction transistors (BJTs), are the most commonly used transistors. They are composed of a thin piece of either p-type or n-type... Search by Specification | Learn More
  • No Image Available
    LED Drivers - (222 companies)
    ...individual display segments. Performance Specifications. CUI VLED15 LED Drivers. Video Credit: Digi-Key Corporation. Supply voltage. Adjustable output current. Efficiency. An LED PWM driver can have a drive current per channel of 42 mA and shut down... Search by Specification | Learn More
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    DC Motor Drives - (681 companies)
    DC motor drives act as the interface and power supply between a motion controller and a DC motor. Search by Specification | Learn More
  • No Image Available
    Diodes - (766 companies)
    ...current is only allowed to flow in one direction. The diode is built by joining together two semiconductor materials: an N-type material (rich in negative carriers or free electrons) and a P-type material (rich in positive carriers or holes... Search by Specification | Learn More
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  • Disruptive Logic Architectures and Technologies
    T. Ernst, E. Bernard, C. Dupre, A. Hubert, S. Becu, B. Guillaumot, O. Rozeau, O. Thomas, P . Coronel, J.-M. Hartmann, C � � Skotnicki, S. Deleonibus, 3D multi channels and stacked nanowires technologies � � Design and Technology and Tutorial ,ICICDT 2008. pp. 265�268 � � P. Robert, O. Faynot, Novel Si-based nanowire devices: will they serve ultimate MOSFETs scaling or ultimate �
  • A two-dimensional analytical-model-based comparative threshold performance analysis of SOI-SON MOSFETs
    IEEE International Conference on Integrated Circuit Design and Technology and Tu- torial , 2008: 1 [16] Young K K. Short- channel effect in fully depleted SOI MOS- FET �s. IEEE Trans Electron Devices, 1989, 36(2): 399 [17] Yeh P C, Fossum J G. Physical subthreshold �
  • SDW MOSFETs in LSI analog circuit design
    M. H. Elsaid and M. I. Elmasry, �Scaling merged SDW MOSFET �S for VLSI,� Solid-State � Y. P . Tsividis, �Design considerations in single- channel MOS ana- log integrated circuits-A tutorial ;� IEEE J, Solid-state Circuits, vol.
  • Charge-pumping extraction techniques for hot-carrier induced interface and oxide trap spatial distributions in MOSFETs
    International Reliability Physics Symposium (IRPS), tutorial , 2010. [10] I. Starkov, S. Tyaginov, H. Enichlmair, J. Park, T. Grasser, and C. Junge- mann, �Analysis of worst-case hot-carrier degradation conditions in the case of n- and p - channel high-voltage MOSFETs ,� in International Con- ference on Simulation of �
  • Nonuniform Mobility-Enhancement Techniques and Their Impact on Device Performance
    [10] S. Takagi, M. Iwase, and A. Toriumi, �On the universality of inversion layer mobility in n and p channel MOSFETs ,� in IEDM Tech. Dig., Dec. 1988, pp. 398�401. IEDM Short Course, IEDM�99 Tutorial , 1999.
  • Self-cascode SOI versus graded-channel SOI MOS transistors
    � 7 Pavanello, M.A., Martino, J.A., and Flandre, D.: �Analog circuit design using graded-channel silicon-on-insulator nMOSFETs�, Solid- State Electron., 2002, 46, pp. 1215�1225 8 Gimenez, S. P ., Pavanello, M.A., Martino � � gain by using graded- channel SOI nMOSFETs�. � Yan, S., and Sanchez-Sinencio, E.: �Low voltage analog circuit design techniques: a tutorial �, IEICE Fundam. � B., Rao, V.R., and Woo, J.C.S.: �Sub-0.18mm SOI MOSFET using lateral asymmetric �
  • Development of a CMOS cell library for RF wireless and telecommunications applications
    � assistance to the RF design community, the CIF layout files, test data and tutorials are available from � All the cells being investigated were fabricated using 2.0, 1.2 and 0.8 micron (�m) silicon CMOS n-well processes using both n- channel and p -channel enhancement MOSFETs using MOSIS.
  • Device design methodology and reliability strategy for deep sub-micron technology [DRAMs]
    TUTORIALS The effect of increasing the MOSFET well doping to compensate for short channel behavior is illustrated in figure 3. The measuredemission probability ( P =I&) is shown to increase by two orders of magnitude for the HD �
  • Hot carrier degradation and ESD in submicrometer CMOS technologies: how do they interact?
    IRPS Tutorial . � G. Van den Bosch, and H. E. Maes, �Hot carrier degradation in submicrometre MOSFET �s: From uniform � [8] P . Heremans, R. Bellens, G. Groeseneken, and H. E. Maes, �Consis- tent model for the hot carrier degradation in n- channel and p-channel MOSFET�s,� IEEE Trans.
  • The Universality of NBTI Relaxation and its Implications for Modeling and Characterization
    [34] C. Schlunder, W. Heinrigs, W. Gustin, and H. Reisinger, "On the Impact of NBTI Recovery Phenomena on Lifetime Prediction of modern p - MOSFETs ," in IIRW Final Rep., 2006, pp. 1-4. � M.A. Alam, "NBTI A Simple View of a Complex Phenomena," in Proc. IRPS, 2006, ( Tutorial ). � Parthasarathy, N. Revil, and E. Vincent, "Modeling Negative Bias Temperature Instabilities in Hole Channel Metal-Oxide-Semiconductor �