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  • MICRO: Guerra (April 2001)
    etching performed to selectively expose the copper interconnect also exposes in the trench sidewall the nitride copper diffusion barrier, the dielectric film, a nitride layer that serves as a stop for the photoresist stripping step, and the photoresist layer itself. As a result of this isotropic
  • MICRO:Process Equipment-Lithography, by Zhou Lin (Feb 99)
    . Unlike i-line photoresist, chemically amplified DUV resist forms an acid during the exposure step. Acid loss at the resist/air interface can then cause capping on the resist profile. Such a loss may be caused by a reaction with a base adsorbed from the air into the resist film or by acid evaporation
  • MICRO: Special apps
    Nga P. Pham and Pasqualina M. Sarro, ; and Jurgen Bertens and Lucas van den Brekel, The cost of the photoresist coating process is a major component of the cost of ownership in semiconductor manufacturing. Minimizing the volume of resist used in coating applications results in lower manufacturing
  • MICRO:Building Copperopolis, by Qingyuan Han (Oct '99)
    and others have adopted low-k/aluminum architectures. In the process of moving toward full low-k/copper dual-damascene flows, manufacturers have identified new integration challenges posed by the removal of photoresist and postetch residues. One significant challenge involves dry photoresist strip
  • MICRO: Process Tool Support
    semiconductor manufacturing processes, some of which are also used in the manufacture of disk media and flat-panel displays. Processes that deposit thin films, such as sputtering and CVD, and processes that remove thin films, such as plasma etching and CMP, are especially prone to contamination from process
  • MICRO: Products
    Available on the Zeta G3 spray cleaning platform, ViPR technology eliminates the need for approximately 80% of FEOL ashing steps during most implanted photoresist stripping, including plasma-doped photoresist. The process uses proprietary chemical blending, delivery, and temperature control
  • MICRO: Materials Integration
    problems result from photoresist stripping and the removal of residues and the barrier layer covering the copper: . The low-k film can be damaged through oxidation or other types of chemical attacks. Such attacks can potentially cause material shrinkage, increasing the dielectric constant or roughening
  • Eliminating heavily implanted resist in sub-0.25- um devices
    in photoresist removal are emerging as device geometries shrink and new materials and manufacturing methods are introduced. The removal of implanted resist is one of the most important of these challenges. Although it involves relatively few mask steps (10 15%), the effective, efficient removal

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