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  • MICRO:Surface Chemistries, by Joseph Zahka, p.85 (March '99)
    system. Photoresist films and other polymer residues vary in composition and, therefore, in how difficult they are to remove.
  • MICRO: Process Tool Support
    flake off shields or chamber components and deposit on wafers in the form of particles. Residues not removed during dedicated wafer-cleaning processes can interfere with subsequent processing. For example, incomplete ashing of a photoresist layer can lead to the "decoration " of the photoresist
  • MICRO: Guerra (April 2001)
    etching performed to selectively expose the copper interconnect also exposes in the trench sidewall the nitride copper diffusion barrier, the dielectric film, a nitride layer that serves as a stop for the photoresist stripping step, and the photoresist layer itself. As a result of this isotropic
  • MICRO: Industry News: Expansions and Acquisitions (May 2000)
    009;Novellus Systems and GaSonics International have signed an agreement to develop techniques for photoresist and residue removal in the making of copper interconnect structures. Novellus plans to install a GaSonics PEP Iridia DL tool in its Copper Integration Center in San Jose, where the system
  • MICRO: Special apps
    Nga P. Pham and Pasqualina M. Sarro, ; and Jurgen Bertens and Lucas van den Brekel, The cost of the photoresist coating process is a major component of the cost of ownership in semiconductor manufacturing. Minimizing the volume of resist used in coating applications results in lower manufacturing
  • MICRO:Process Equipment-Lithography, by Zhou Lin (Feb 99)
    . Unlike i-line photoresist, chemically amplified DUV resist forms an acid during the exposure step. Acid loss at the resist/air interface can then cause capping on the resist profile. Such a loss may be caused by a reaction with a base adsorbed from the air into the resist film or by acid evaporation
  • MICRO: Products
    Available on the Zeta G3 spray cleaning platform, ViPR technology eliminates the need for approximately 80% of FEOL ashing steps during most implanted photoresist stripping, including plasma-doped photoresist. The process uses proprietary chemical blending, delivery, and temperature control
  • MICRO:Building Copperopolis, by Qingyuan Han (Oct '99)
    and others have adopted low-k/aluminum architectures. In the process of moving toward full low-k/copper dual-damascene flows, manufacturers have identified new integration challenges posed by the removal of photoresist and postetch residues. One significant challenge involves dry photoresist strip

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