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Power Transistor Datasheet
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TriQuint Semiconductor, Inc. 
American Microsemiconductor, Inc. 
Integra Technologies, Inc. 
RS Components, Ltd.
Integra Technologies, Inc.
American Microsemiconductor, Inc. |
Products/Services for Power Transistor Datasheet
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Transistors - (536 companies)...embedded in integrated circuits. In these circuits, the number of transistors can range from a few to a few billion. The transistor is considered to be one of the most important inventions of the 20th century because of its abundant use... Search by Specification | Learn More -
Power Bipolar Transistors - (84 companies)...bipolar transistors meet screening levels for military specifications (MIL-SPEC). Basic IC package types for power bipolar transistors are transistor outline (TO), small outline (SO), and small outline transistor (SOT). For each package type, many... Search by Specification | Learn More -
RF Transistors - (93 companies)...specifications (MIL-SPEC). IC Package Types. Basic integrated circuit (IC) package types for RF transistors are transistor outline (TO), small outline (SO), and small outline transistor (SOT). For each package type, many variants are available... Search by Specification | Learn More -
Darlington Transistors - (55 companies)...transistors. Darlington transistors are circuits that combine two bipolar transistors in a single device. They provide high current gain and require less space than configurations that use two discrete transistors. In Darlington pairs, transistor... Search by Specification | Learn More -
DC Power Supplies - (1098 companies)...power supplies produce an output that is proportional to the input. They contain rectifiers and filters similar to those on unregulated supplies but have a power transistor in series with the output. A sensing circuit monitors the output voltage... Search by Specification | Learn More -
Switching Power Supplies - (241 companies)Switching power supplies are DC sources that use a switching element (normally a power transistor) to generate the desired voltage. Switching power supplies are also called switch-mode products or switching mode power supplies (SMPS). Switching... Search by Specification | Learn More
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Linear Power Supplies - (158 companies)Linear power supplies accept AC inputs and provide one or more DC outputs for a wide variety of computer and industrial applications. They use an active element (normally a power transistor) operating in its linear region to generate a desired... Search by Specification | Learn More
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Bipolar RF Transistors - (49 companies)RF transistors vary in terms of polarity, packaging, and packing methods. NPN is a physical bipolar junction transistor (BJT) arrangement in which the emitter and the collector are made of N-type material and the base is made of P-type material... Search by Specification | Learn More
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Insulated Gate Bipolar Transistors (IGBT) - (98 companies)Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching... Search by Specification | Learn More
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RF MOSFET Transistors - (35 companies)MOSFET RF transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. RF MOSFET Transistors Information... Search by Specification | Learn More
Product News for Power Transistor Datasheet
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Integra Technologies, Inc.
ILD0506EL350 High Power Pulsed TransistorIntegra Technologies demonstrates the advantages of LDMOS technology in pulsed radar applications. The high power pulsed transistor part number ILD0506EL350 is designed for P-Band systems operating from 480 MHz to 610 MHz. Operating at a pulse width of 15ms with a duty factor of 33%, this push-pull MOSFET device supplies a minimum of 350 watts of peak pulse power across the instantaneous operating bandwidth of 480-610 MHz. Maximum reliability is achieved through all-gold metal contacts... (read more)Browse Transistors Datasheets for Integra Technologies, Inc. -
Integra Technologies, Inc.
ILD2735M120 High Power Pulsed TransistorIntegra Technologies demonstrates the advantages of LDMOS technology in pulsed radar applications. The high power pulsed transistor part number ILD2735M120 is designed for S-Band radar applications operating over the 2.7 - 3.5 GHz instantaneous frequency band. Under 300us / 10% pulsing conditions it supplies a minimum of 120 watts of peak output power with 8-9dB gain typically. The ILD2735M120 will be released and available for sampling in Q4 of 2010. Maximum reliability is achieved through... (read more)Browse Transistors Datasheets for Integra Technologies, Inc. -
Integra Technologies, Inc.
ILD2731M200 High Power Pulsed TransistorIntegra Technologies demonstrates the advantages of LDMOS technology in pulsed radar applications. The high power pulsed transistor part number ILD2731M200 is designed for S-Band systems operating from 2.7 to 3.1 GHz. Operating at a pulse width of 300us with a duty factor of 10%, this device supplies a minimum of 200 watts of peak pulse power across the instantaneous operating bandwidth of 2.7-3.1 GHz. The ILD2731M200 will be released and available for sampling in Q4 of 2010. The high power... (read more)Browse Transistors Datasheets for Integra Technologies, Inc. -
Integra Technologies, Inc.
VHF-Band Pulsed Power TransistorThe high power pulsed transistor part number IDM165L650 is designed for VHF-Band systems operating at 125-167 MHz. Operating at a pulse width of 1ms with a duty factor of 20%, this dual MOSFET device supplies a minimum of 650 watts of peak pulse power at a fixed input power of 80 watts across the instantaneous operating bandwidth of 125-167 MHz. All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth... (read more)Browse Transistors Datasheets for Integra Technologies, Inc. -
Avnet Express
Freescale MRFE6VP8600H RF Power TransistorThe MRFE6VP8600, designed for UHF broadcast & industrial designs, is the latest addition to Freescale's portfolio of rugged RF transistors. Operating from 470 - 860 MHz, this 50V LDMOS device is capable of 600W peak power while able to withstand greater than 65:1 VSWR. The MRFE6VP8600 is a breakthrough RF Power device that brings levels of power and ruggedness never before seen in the broadcast industry. Delivers 125W Avg. DVB-T (8k OFDM) output power at 50V. Capable of handling >65:1... (read more)
Conduct Research
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Power Supply Technical Guide (.pdf)
. . . . . . . . . . . . . . . . . . . . . . . . . . . 109. · Technology Editorial 2. Putting the Data into Power Supply Datasheets . . . . . . . . . . . . . . . . . . 115. · Technology Editorial 3. Medical Power Supplies: trends, challenges & design approaches . . . . 120. · Technology Editorial 4. Digital...
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Circuit Ideas: Hot-Surface Warning Light Requires no External Power
and keeps flashing until the differential subsides to 10°C. There’s no external power needed because a step-up switching regulator (MAX1676) boosts the TEG output to about 5 V. The flashing oscillator is formed by the 2N3906 transistor and a precision comparator inside the MAX1676 (accessible via LBI...
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Linear Voltage Fan Speed Control Using Microchip's TC64X Family
Pulse Width Modulation (PWM) fan speed control methodology pulse-width modulates a fan's full-rated power supply voltage at a low frequency, typically 30 Hz. A typical PWM circuit, consisting of a transistor in series with a fan, can be small and inexpensive because it is either fully...
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Synchronization
circuitry, the layout of. The input fuses can be replaced or completely elimi-. the components is critical. One must avoid ground loops,. nated. But if a component failure occurs--such as a shorted. bouncing ground, common-mode noise or any other noise. input capacitor or transistor--and the PCB power run...
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ePanorama.net - Circuits
larger than normal relays (means more waster power and voltage, heat sink oftern requred at high current models) Large output capacitance (typically 1 pF ro normal relay, more than 20 pF for SSR) Relay heats up noticeably when large current passes through it More sensitive to voltage transients...
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Mitigation Methods for Parasitic Turn-on Effect Due to Miller Capacitor - White Paper
. Additional capacitor between gate and emitter. Due to this additional capacitor, the required driver. power is increased and the IGBT shows higher switching. losses for the same RG. Additional. Transistor. Negative Power Supply to Increase Threshold Voltage. The usage of negative gate voltage to safely...
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System Design Considerations for Implementing a ROM Microcontroller
, the manufacturer ensures that both. devices meet the datasheet specifications, but designs. In all cases, the system designer(s) should specifically. that are very power sensitive should be evaluated using. request any errata that exists for each of the two. actual ROM devices, if possible to verify...
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IR Remote Control Transmitter
will use more power transmitting to. to receive the data. For example, this device address. achieve the same received signal power. In short, the. specifies if the television or the stereo should react to. value in matching the carrier frequency, duty cycle and. the message. The last 6 bits, Data, comprise...
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Upgrading to the Planar Systems AF1, AG, and AM VGA EL Displays - AN118
........................................................................................................................................6. Power Considerations.................................................................................................................................................8. ENVIRONMENTAL DESIGN...
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Tagging Load Cells
set for multiple instruments. LOAD-CELL CONVERSION. The key to creating a TEDSTag-compliant load cell is an electronic identification chip made by Dallas Semiconductor, the DS2401. The chip is readily available from many distributors and typically costs under $2.00. Housed in a TO92 transistor case...
Engineering Web Search: Power Transistor Datasheet
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Transistor - Wikipedia, the free encyclopedia A transistor is a semiconductor device used to amplify and switch electronic signals and power. |
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Light-emitting diode - Wikipedia, the free encyclopedia LED retrofit "bulb" with aluminium heatsink, a diffusing dome and E27 base, using a built-in power supply working on mains voltage |
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Untitled Power management ICs RF Sensors Thyristors Power management RF identification Secure transactions See NXP Information |
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UHF broadcast power transistors (470-860 MHz) :: NXP... UHF power LDMOS transistor Download datasheet Power management ICs RF Sensors Thyristors See NXP Information |
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ON Semiconductor TIP41: NPN Bipolar Power Transistor The Bipolar Power Transistor is designed for general purpose power amplifier and switching applications. See ON Semiconductor L.L.C. Information |
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ON Semiconductor MJD44H11: 8.0 A, 80 V NPN Bipolar Power... MJD44H11: 8.0 A, 80 V NPN Bipolar Power Transistor See ON Semiconductor L.L.C. Information |
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power transistor datasheet and application note, data sheet,... power transistor Datasheet, Circuit, PDF, Cross Reference, & Application Note Results |
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RF power transistor datasheet and application note, data... rf transmitter BLF244 and equivalent TV power transistor datasheet Line-ups Microwave Power Transistors Power Modules File under Discrete |
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LM117/LM317A/LM317 3-Terminal Adjustable Regulator adjustment terminal to ground which programs the output to standard transistor packages which are easily mounted and 1.2V where most loads draw See Newark Information |
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National Semiconductor LLP Package Products Product Folder (Datasheet) Description Product Type Package Status Type # pins MSL/Lead-Free Availability See National Semiconductor Information |
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