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Parts by Number Top

Part # Distributor Manufacturer Product Category Description
RF POWER TRANSISTOR ASAP Semiconductor SARONIX Not Provided 984l
TRANSISTOR MOS RF SO ASAP Semiconductor VISHAY Not Provided 3000
RF1030 AmericanMicroSemi AMS Transistors:UHF/Microwave Transistors:Bipolar NPN rf1030 rf1030 pdf rf1030 datasheetrf1030 is on sale at our online store for 36.685. Call 973-377-9566 100% Satisfaction Gauranteed. American Microsemiconductor Inc.FREE UPS ground shipping or more. Also get special discount on International orders.
RF50042 AmericanMicroSemi AMS Transistors:Transistors:Bipolar:Si NPN Low-Power:Bipolar:Si NPN Low-Power rf50042 rf50042 pdf rf50042 datasheetrf50042 is on sale at our online store for 3.795. Call 973-377-9566 100% Satisfaction Gauranteed. American Microsemiconductor Inc.FREE UPS ground shipping or more. Also get special discount on International order
RF2084 AmericanMicroSemi AMS Transistors:Transistors:Bipolar:Si NPN Power:Transistors:Bipolar:Si NPN Power Transistors:Transistors:Bipolar:Si NPN Power:Transistors:Bipolar:Si NPN Power
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Conduct Research Top

  • AN721: Impedance Matching Networks Applied to RF Power Transistors, Courtesy of Motorola
    be considered as a corollary of the matching circuit. Matching is necessary for the best possible energy transfer from stage to stage. In RF-power transistors the input impedance is of low value, decreasing as the power increases, or as the chip size becomes larger. This impedance must be matched
  • Silicon RF Power MOSFETS
    Silicon RF Power MOSFETS. Providing general guidelines for understanding the design and operation of the transistors, this book describes the physics, design considerations and RF performance of silicon power MOSFETs.
  • RF/Microwave Solid State Switches
    Solid state switches are ubiquitous. in modern RF/microwave systems. They are utilized to control signal. flows, select signal sources and for many. other applications. These switches are. implemented either with positive-intrinsicnegative. (PIN) diodes or with field effect. transistors (FETs
  • Modeling of SOI FET for RF Switch Applications
    This paper presents the modeling of an SOI. FET for RF switch applications. Given that the HF smallsignal. predictability, i.e. the insertion loss and the isolation, is. a common state of the art, the study focuses on the modeling. of the non-linearity of the FET. The non-linearity of an SOI. FET
  • Solid State RF/Microwave Switch Technology: Part 2
    In part 1 we discussed an. overview of RF/microwave. switch topologies, PIN. diode theory of operation, and. some simple PIN diode switch. implementations. In part 2 we. will discuss more complex PIN. diode switches, the theory of. operation of RF/microwave field. effect transistors (FETs
  • Evaluating pHEMT Process Improvements Using Wafer Level RF Tests
    by the wafer process. DC. testing of circuit designs is used to evaluate the success of. the design, the success of the wafer processing, and the. interaction of the design with the process. While good. PCM and DC circuit test results are necessary, they are. not sufficient to guarantee acceptable RF
  • New GaN FETs, Amplifiers and Switches Offer System Engineers a Way to Reduce RF Board Space and System Prime Power
    Ever-increasing demands for faster product launch times, higher performance, lower part counts and reduced costs create RF system design challenges. This paper focuses on how the latest gallium nitride (GaN) products, specifically discrete transistors, amplifiers and switches, offer design
  • AN215A: RF Small Signal Design Using Two Port Controllers, Courtesy of Motorla
    Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution (free from approximation) available for the complete design problem. The only sources of error in the final design are parameter variations resulting from

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