Products/Services for Transistor Cross Reference
Transistors - (653 companies)
Voltage Reference Chips - (97 companies)
Bipolar RF Transistors - (65 companies)
RF Transistors - (134 companies)
Darlington Transistors - (62 companies)
Insulated Gate Bipolar Transistors (IGBT) - (125 companies)
Power Bipolar Transistors - (85 companies)...for commercial, industrial, or automotive applications. Other power bipolar transistors meet screening levels for military specifications (MIL-SPEC). Package Types. Basic IC package types for power bipolar transistors are transistor outline (TO), small outline... Search by Specification | Learn More
Voltage Dividers and Voltage References - (67 companies)
RF MOSFET Transistors - (40 companies)
Junction Field-Effect Transistors (JFET) - (72 companies)
Product News for Transistor Cross Reference
NMB Technologies Corporation
NMB AC, DC Fan Cross Reference Tool Our new Fan Cross Reference Listing gives you the opportunity to interchange another manufacturer's part number with NMB's part number. You will not only be able to interchange the part number, but have the opportunity to look for real time inventory and buy directly from our distributors. Fan Cross-Reference Tool: NMB Fan Cross Reference part number search online NOW. Select a manufacturer/enter their part number, and get the recommended NMB equivalent, http://www.nmbtc.com/fancross/ (read more)Browse Electronic Cooling Fans Datasheets for NMB Technologies Corporation
1-Source Electronic Components
Transistors 1-Source Electronic Components stocks and distributes an extensive array of commercial-grade, industrial-grade, and mil-spec transistors. In addition, they maintain a vast worldwide network of transistor manufacturers and distributors, giving them instant access to any obsolete or hard-to-find items that they do not stock. 1-Source is a business-to-business distributor and sells only to manufacturers, distributors, government contractors, and other wholesale purchasers of transistors. Although... (read more)Browse Transistors Datasheets for 1-Source Electronic Components
Latrobe Foundry Machine & Supply Co.
CROSS Aluminum Alloy 356-F. Sizes: 1/8" to 4" (read more)Browse Pipe Fittings Datasheets for Latrobe Foundry Machine & Supply Co.
M.S. Kennedy Corp.
MSK110RH Dual +2.5V Precision Voltage References The MSK110RH Dual +2.5V Precision Voltage References are available in Class "K" and currently available in industrial versions. The MSK110RH offers excellent initial voltage tolerances of ±5mV and very good stability over temperature. This dual voltage reference offers a wide current range and a low dynamic impedance that is maintained over the full temperature range. Each reference is completely independent allowing for the most flexibility. The adjustment terminals allow the reference... (read more)Browse IC Linear Voltage Regulators Datasheets for M.S. Kennedy Corp.
Mouser Electronics, Inc.
Infineon RF Transistors Infineon's RF Transistors provide the designer the best possible performance, superior flexibility and price/performance ratio. These are widely used for new emerging wireless applications, where the system specification is not yet firmly established. The BFxx Low Noise Amplifiers (LNAs) include devices suitable for use from AM over VHF/UHF up to 14GHz. These are the latest LNA innovations based on Infineon ’s reliable high volume 80GHz fT silicon germanium carbon (SiGe:C) heterojunction... (read more)Browse RF Transistors Datasheets for Mouser Electronics, Inc.
American Microsemiconductor, Inc.
Bipolar Junction Transistor (BJT) Description of bipolar transistor. The transistor is primarily used as a current amplifier. When a small current signal is applied to the base terminal of a bipolar transistor, it is amplified in the collector circuit. This current amplification is referred to as hfe or beta and equals Ic/Ib. As with all semiconductors, breakdown voltage of a transistor is also a design limitation. There are breakdown voltages that must be taken into account for each combination of terminals of a transistor... (read more)Browse Power Bipolar Transistors Datasheets for American Microsemiconductor, Inc.
American Microsemiconductor, Inc.
MRF5176 Power Microwave Transistor American Microsemiconductor Inc. (AMS) announces ready delivery of the MRF5176 power microwave transistor. This NPN Silicon transistor is designed for wideband large-signal driver and predriver amplifier stages. It features 15 Watts output and a 200-600 MHZ frequency range. The output Power is 15 Watts at 28 Volts, Vcc. Minimum Gain is 10 dB also at 28 Volts with an efficiency of 50%. Adding to our microwave line, the MRF5176 is available from AMS in the original helicopter style RF... (read more)Browse RF Transistors Datasheets for American Microsemiconductor, Inc.
American Microsemiconductor, Inc.
2N4949 Unijunction Transistor 2N4949 MILITARY UNIJUNCTION TRANSISTOR BY AMERICANMICROSEMICONDUCTOR Inc. (AMS). The most common use for the 2N4949 is to trigger a Silicon Controlled Rectifier (SCR), although its output is often used to trigger other devices. The 2N4949 Unijunction Transistor (UJT) features a tightly controlled intrinsic standoff ratio and a 7 Kohm interbase resistance in a hermetically sealed TO-18 metal package; the 2N4949 is also available for commercial and inustrial use... (read more)Browse Unijunction Transistors (UJT) Datasheets for American Microsemiconductor, Inc.
Linear Integrated Systems, Inc.
NPN and PNP Monolithic Dual Transistors LS310(NPN)and LS350(PNP) Series Monolithic Dual Transistors. Features: Low Offset/Tight Matching Monolithic Dual (0.5 to 3mV versions). High Gain (100 to 400 Beta versions). Tightly Matched Monolithic Dual (1-15mV versions). High Breakdown Voltage (25 to 60 Volt versions). Low Capacitance (cob=2pf). Designed for Low Offset, High Gain, Low drift amplification. Available in Surface Mount SOIC 8 lead and SOT23 6 lead packages. Also available in Tested Die, PDIP 8, TO-71 6, and TO-78 6 lead... (read more)Browse Small-Signal Bipolar Transistors (BJT) Datasheets for Linear Integrated Systems, Inc.
Modern InGaP/GaAs heterojunction. bipolar transistors (HBT) demonstrate excellent microwave. and high-speed performance due to high carrier mobility. and bandgap engineering. They have found a niche in. wireless and optical electronics in spite of higher wafer. fabrication costs and lower...
Though not as well known as the bipolar transistor or op amp, this long-established. transistor still excels in where you need to optimize circuit behavior, such as for lowest. noise. Many engineers are somewhat familiar with discrete bipolar transistors, such as the. venerable 2N2222...
...by employing. a cross-biasing approach, transistor stacking and deep n-well. process. Power handling techniques used for the switches and the. associated performance tradeoffs are discussed. The measured. noise figure of the LNA and the receive chain comprising both an. LNA and a switch is 1.5 dB and 3.0 dB...
Over the past decade, III-V devices, and modules containing them, have dominated the market for RF front end. electronics in mobile handsets. GaAs-based hetero-junction bipolar transistors (HBTs) have solidified their position. as the technology of choice for fabricating wireless handset power...
/substrate, to mass change upon biochemical complexation. Examples of biochemical recognition and transducer are provided in Table I. Table I. Biosensor strategies. (FET = field-effect transistor; NADH = nicotinamide adenine dinucleotide.) This article discusses the development of a specific type...
...of physicians more than any medical advance since the taming of the x-ray. For example, computerized axial tomography machines CAT scanners capture a series of cross-sectional images of a body structure that can then be intelligently assembled into a 3-D image by a computer. The processing...
",and so there have been and continue to be many ECG imitators. Some of these are NTE, SK originally RCA and now Thomson Products, General Electric with their "GE" series, and Motorola and their "HEP" line of products. All these manufacturers supply comprehensive cross references to other manufacturers...
crosses through zero and creates a precise timing signal t1 coincident with the centerline of the sensor pole piece; for a larger tooth, however, the zero cross point can occur at any point between t2 and t3. piece; the second tooth is much wider. The magnetic flux increases as the target passes...
The domi-. power required. nant method of AC control is by PWM inverters, particularly with. 3. Eddy current couplings and other slip devices modify the fan. the advent of the high speed Insulated Gate Bipolar Transistors. curve but do so via "slip " between the fan motor and the fan -. (IGBTs...
...bus rate. an352rev0_1.fm AN352. LOW-COST, HIGH-SPEED I2C ISOLATION WITH DIGITAL ISOLATORS. 1. Introduction. Many articles have been published using opto-couplers. for I2C isolation (See “5. References” on page 3). These. Isolator. circuits are somewhat complex, sensitive to bus. A. capacitance...
Engineering Web Search: Transistor Cross Reference
Transistor - Wikipedia, the free encyclopedia
Transistor From Wikipedia, the free encyclopedia For other uses, see Transistor (disambiguation).
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npn pnp Rf transistor bipolar cross reference datasheet and...
npn pnp Rf transistor bipolar cross reference Datasheet, Circuit, PDF, Cross Reference, & Application Note Results
Toshiba America Electronic Components and Semiconductors
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Cross Reference, Data Sheet and Inventory Search NTE2680 High Speed Switching NPN Transistor
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CD4000 cross REFERENCE datasheets and application notes, data...
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Xilinx UG349 ML505/ML506/ML507 Reference Design, User Guide
http://www.xilinx.com/virtex5 6 www.xilinx.com ML505/ML506/ML507 Reference Design UG349 (v3.1) June 23, 2009 R Typographical Conventions Online
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Cross Reference Search | Transistors | TOSHIBA Semiconductor &...
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