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General Specifications
   Transistor Type / Technology       
   Your choices are...         
   General Purpose BJT       Transistors for general-purpose applications. Bipolar junction transistors (BJT) consist of two sections of one type of semiconductor (N or P) around a middle slab of the other type. The junctions between the semiconductor sections cause an incoming weak electrical signal to be amplified. Bipolar transistors come in a wide variety of physical packages. Package type is primarily dependent upon the power dissipation of the transistor, much like resistors: the greater the maximum power dissipation, the larger the device has to be to stay cool. There are several standardized package types for three-terminal semiconductor devices, any of which may be used to house a bipolar transistor. This is an important fact to consider: there are many other semiconductor devices other than bipolar transistors, which have three connection points. It is impossible to positively identify a three-terminal semiconductor device without referencing the part number printed on it, and/or subjecting it to a set of electrical tests. 
   Power BJT Transistors       Bipolar junction transistors (BJT) are designed to function in high power systems. Bipolar transistors come in a wide variety of physical packages. Package type is primarily dependent upon the power dissipation of the transistor, much like resistors: the greater the maximum power dissipation, the larger the device has to be to stay cool. There are several standardized package types for three-terminal semiconductor devices, any of which may be used to house a bipolar transistor. This is an important fact to consider: there are many other semiconductor devices other than bipolar transistors, which have three connection points. It is impossible to positively identify a three-terminal semiconductor device without referencing the part number printed on it, and/or subjecting it to a set of electrical tests. 
   Bipolar RF Transistors       RF bipolar junction transistors (BJTs) are designed to handle high power RF signals, such as signals found in stereo amplifiers, radio transmitters, TV monitors, etc. Bipolar transistors come in a wide variety of physical packages. Package type is primarily dependent upon the power dissipation of the transistor, much like resistors: the greater the maximum power dissipation, the larger the device has to be to stay cool. There are several standardized package types for three-terminal semiconductor devices, any of which may be used to house a bipolar transistor. This is an important fact to consider: there are many other semiconductor devices other than bipolar transistors, which have three connection points. It is impossible to positively identify a three-terminal semiconductor device without referencing the part number printed on it, and/or subjecting it to a set of electrical tests. 
   JFET       The junction field-effect transistor (JFET) is so named because an incoming weak electrical signal creates an electrical field across a section of semiconductor. This field causes a second electrical current to flow across the semiconductor, identical to the first weak signal, but stronger. 
   MOSFET       Metal-Oxide Semiconductor Field-Effect Transistors (MOSFETs) carry charges, such as electrons, along their channels. An electrode called the gate, separated from channel by a thin layer of oxide insulation, controls the width of the channel, which determines how well the device conducts. The insulation keeps current from flowing between the gate and channel.  MOSFETs are also known as insulated gate field effect transistors (IGBTs). 
   Power MOSFET       Power MOSFETs are designed to withstand high power applications. 
   MOSFET RF Transistors       RF MOSFET transistors are designed to handle high power RF signals, such as signals found in stereo amplifiers, radio transmitters, TV monitors, etc. 
   IGBT       Insulated gate bipolar transistors (IGBTs) are bipolar transistors with an insulated gate. They combine the advantages of BJTs (high voltage and current) with the advantages of MOSFETs (low power consumptions and high switching). IGBTs are voltage-controlled power transistors that have higher current densities than equivalent high-voltage power MOSFETs. They are faster and offer far superior drive and output characteristics than power bipolar transistors. 
   CMOS       Complementary metal-oxide semiconductor (CMOS) transistors are used in high-speed switching applications. 
   MESFET       Metal semiconductor field effect transistor (MESFET). 
   TempFET       Temperature protected field-effect transistors (TempFET) are n- or p-channel power MOSFETs with an integral temperature sensor. 
   HEMT       High electron mobility transistors (HEMTs) are used in microwave circuit applications. These transistors behave much like conventional field effect transistors (FETs): a conducting channel between drain and source electrodes can be affected by applying a voltage to the gate electrode. This causes modulation of the drain-source current. In a HEMT, a hetero structure that confines the charge carriers to a thin layer creates the conducting channel. The concentration of the carriers and their speed in this layer enables the transistor to maintain a high gain at very high frequencies. 
   HFET       Heterojunction field-effect transistors (HFET). 
   PHEMT       Pseudomorphic high electron mobility transistor (PHEMT) technology. 
   Darlington       Darlington transistors (or Darlington Pairs) are semiconductor devices that combine two bipolar transistors in tandem in a single device. This gives them high current gain (commonly written ß), and takes up less space than using two discrete transistors in the same configuration. Darlington pair circuits consist of two transistors in which the collectors are tied together and the emitter of the first transistor is directly coupled to the base of the second transistor. The total gain of the Darlington is the product of the gain of the individual transistors. Typical modern devices have current gains of 1000 or more. They have greater phase shift at high frequencies than single transistors, and hence can become unstable with negative feedback much more easily. The base-emitter voltage is also higher; it is the sum of both base-emitter voltages and for silicon-transistor >1.2 V. Sidney Darlington, an engineer at Bell Laboratories invented this configuration (originally realized as two separate transistors). The idea of putting two or three transistors on a single chip was patented by him, but not the idea of putting an arbitrary number of transistors, which would cover all modern ICs. 
   Other       Other unlisted transistor type. 
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   Polarity       
   Your choices are...         
   NPN       A physical BJT transistor arrangement where the emitter and the collector are made of N-type material and the base of P-type. 
   PNP       A physical BJT transistor arrangement where the emitter and the collector are made of P-type material and the base of N-type. 
   N-Channel       A field-effect transistor with the channel made of N-type material. 
   P-Channel       A field-effect transistor with the channel made of P-type material. 
   Complementary         
   Other       Other unlisted polarity type. 
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Packaging Characteristics
   Package Type       
   Your choices are...         
   TO-3       TO-3 is a transistor outline (TO) package. 
   TO-8       TO-8 is a transistor outline (TO) package. 
   TO-39       TO-39 is a transistor outline (TO) package. 
   TO-92       TO-92 is a single in-line, transistor outline (TO) package that is often used for low power devices. One of the oldest power packages, TO-92 is suitable for applications in office and communication equipment. 
   TO-202       TO-202 is a transistor outline (TO) package. 
   TO-220       TO-220 is a transistor outline (TO) package that is suitable for high power, medium current, and fast-switching power devices. TO-220 is used in home appliances, office and industrial equipment, and personal and consumer electronics. A package variant, TO-220 Full Pack, includes a fully encapsulated heat sink that does not require extra hardware for electrical isolation. TO-220 Full Pack has the same footprint as TO-220, provides electrical isolation up to 5 KV, and is often used in motor drive applications and power supplies. 
   TO-223       TO-223 is a transistor outline (TO) package. 
   TO-237       TO-237 is a transistor outline (TO) package. 
   TO-247       TO-247 is a large, through-hole, transistor outline (TO) package. TO-247 provides excellent power dissipation and is ideal for metal oxide semiconductor field effect transistors (MOSFETs), high power bipolar transistors, and insulated gate bipolar transistors (IGBTs). 
   TO-263       TO-263 is the surface-mount version of the TO-220 package. TO-263 is a transistor outline (TO) package with 2, 3, 5, 6, or 7 leads. TO-263 can accommodate large dice because of its large pad design. It is suitable for high power applications due to its low resistance. Typical applications for TO-263 include home appliances and personal computers. 
   SO-8       SO-8 is a small outline (SO) package. 
   SOT3       SOT3 is a small outline transistor (SOT) package with three leads. 
   SOT23       SOT23 is a rectangular, surface mounted, small outline transistor (SOT) package with three or more gull wing leads. SOT23 features a very small footprint and is optimized for the highest possible current. Because of its low cost and low profile, SOT23 is used in home appliances, office and industrial equipment, personal computers, printers, and communication equipment. 
   SOT25       SOT25 is a surface mounted, small outline transistor (SOT) package with three leads.  
   SOT26       SOT26 is a plastic, surface mounted, small outline transistor (SOT) package with three leads.  
   SOT82       SOT82 is a rectangular, surface mounted, small outline transistor (SOT) package with three leads. SOT82 is larger than DPAK and smaller than TO-220, but still comparable to TO-220 in performance. SOT82 lead frames are available in full nickel or selective silver plating and allow wire bonding with gold or aluminum wire. Often, SOT82 is used in over-voltage protection devices in telecommunications equipment. SOT82 is also used to package high power rectifiers, DC to AC converters (DACs) and frequency converters. 
   SOT89       SOT89 is a plastic, surface mounted, small outline transistor (SOT) package with three leads and a collector pad for good heat transfer. Unlike other packages, SOT89 lead posts are up-set and not down-set. SOT89 is designed for medium power and high-speed switching applications. It is also used in applications that feature very low RDS (on), no secondary breakdown, and direct interface to complementary metal oxide semiconductor (CMOS) and transistor-transistor logic (TTL). 
   SOT123       SOT123 is a flanged, ceramic, surface mounted, small outline transistor (SOT) package with two mounting holes and four leads.  
   SOT143       SOT143 is a plastic, surface mounted, small outline transistor (SOT) package with four leads. 
   SOT223       SOT223 is a plastic, surface mounted, small outline transistor (SOT) package with four leads and a heat sink. During soldering, the formed leads absorb thermal stress and eliminate the possibility of damage to the die. The encapsulation material enhances device reliability, allowing SOT223 to provide excellent performance in environments with high temperatures and humidity levels. SOT223 provides power dissipation of 1W ~ 1.5W. 
   SOT323       SOT323 is a plastic, surface mounted, small outline transistor (SOT) package with three leads. 
   TO-251 / TO-252       TO-251 and TO-252 are low to medium power packages that feature a transistor outline (TO). TO-251 uses through-hole technology (THT). TO-252 uses surface mount technology (SMT). Both packages provide several lead frame choices and are commonly used in home appliances, personal computers, lighting, and automotive systems.     
   FPAK       Flat package (FPAK). 
   Other       Other unlisted or proprietary packages. 
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   Transistor Grade / Operating Range      The field in which the transistor will operate.
   Your choices are...         
   Commercial       Devices support a temperature range and feature mechanical and electrical specifications that are suitable for commercial applications. 
   Industrial       Devices support a temperature range and feature mechanical and electrical specifications that are suitable for industrial applications. 
   Military       Devices support a temperature range and feature mechanical and electrical specifications that are suitable for military applications. 
   Automotive       Devices support a temperature range and feature mechanical and electrical specifications that are suitable for automotive applications. 
   Other       Other unlisted screening levels. 
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