Integra Technologies, Inc. -  S-band Radar 50ohm Matched LDMOS Module

Integra Technologies announces another S-band radar pallet that will significantly reduce cycle time in your next high powered design. Part number ILP2731M260 is a 50 W matched high power pulsed radar pallet amplifier for S-Band radar systems produced for drop-in manufacturability. (read more)

Integra Technologies, Inc. - IGN2729M250C S-Band Radar Transistor

IGN2729M250C is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for S-Band radar applications operating over the 2.7 – 2.9 GHz instantaneous frequency band. (read more)

Integra Technologies, Inc. - IGN2731M200 S-Band radar transistor

Newly introduced, the IGN2731M200 S-Band radar transistor is capable of producing more than 60% efficiency. This GaN on SiC HEMT transistor is designed for the 2.7-3.1GHz instantaneous operating frequency band and offers POUT-PK = 200W @ 300us/10%/44V. (read more)

Integra Technologies, Inc. - ILD2735M120 High Power Pulsed Transistor

The high power pulsed transistor part number ILD2735M120 is designed for S-Band radar applications operating over the 2.7 - 3.5 GHz instantaneous frequency band. Under 300us / 10% pulsing conditions it supplies a minimum of 120 watts of peak output power with 8-9dB gain typically (read more)

Integra Technologies, Inc. - VHF-Band Pulsed Power Transistor

The high power pulsed transistor part number IDM165L650 is designed for VHF-Band systems operating at 125-167 MHz. Operating at a pulse width of 1ms with a duty factor of 20%, this dual MOSFET device supplies a minimum of 650 watts of peak pulse power at a fixed input power of 80 watts across the instantaneous operating bandwidth of 125-167 MHz (read more)

Integra Technologies, Inc. - ILD0506EL350 High Power Pulsed Transistor

The high power pulsed transistor part number ILD0506EL350 is designed for P-Band systems operating from 480 MHz to 610 MHz. Operating at a pulse width of 15ms with a duty factor of 33%, this push-pull MOSFET device supplies a minimum of 350 watts of peak pulse power across the instantaneous operating bandwidth of 480-610 MHz (read more)

Integra Technologies, Inc. - VDMOS Common Source RF Power Transistors

Integra's line of VDMOS common source RF power transistor products boast unparalleled performance in the industry. They are designed for rugged operation in various broadband communication and broadcast applications. All gold refractory metal contact on silicon chips and the associated gold wire bonds offer superior reliability (read more)

Integra Technologies, Inc. - L-Band Avionics Pallet Amplifier

The high power pulsed avionics pallet part number IBP1011L800 is designed for L-Band avionics systems operating at 1030 MHz. While operating in class C mode under Mode S-ELM pulse burst conditions at VCC = 48V, this amplifier supplies a minimum of 900 watts of peak pulse power (read more)

Integra Technologies, Inc. -  S-Band Radar Pallet

Integra Technologies announces another S-band radar pallet. Part number ILP3135M240 is a 50 W matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth of 3.10-3.50GHz. (read more)

Integra Technologies, Inc. - GaN-on-Silicon Devices

Integra announces the world's first GaN-on-Silicon devices operating at 50 volts. Leveraging a world class design team and internal wafer fabrication facility with nearly two years of research and development has culminated in the announcement and launch of two new products the IGN2731M25 and IGN2731M50. (read more)