FCI-H125/250G-GaAs-100 series with active area sizes of 100µm, from OSI Optoelectronics, is a compact integration of our high speed GaAs photodetector with a wide dynamic range transimpedance amplifier. Combining the detector with the TIA in a hermetically sealed 4 pin TO-46 or TO-52 package provides ideal conditions for high speed signal amplification. Low capacitance, low dark cu... (read more)
The YAG Series of photo detectors from OSI Optoelectonics, are optimized for high response at 1060 nm, the YAG laser light wavelength, and low capacitance, for high speed operation and low noise. These detectors can be used for sensing low light intensities, such as the light reflected from objects illuminated by a YAG laser beam for ranging applications. The SPOT Series of quadrant dete... (read more)
New pulsed laser diode modules featuring power greater than 500mW will be showcased in OSI Laser Diode’s booth # 2029 at SPIE Photonics West at the Moscone Center in San Francisco, Feb. 4-6, 2014. (read more)
FCI-H155/622M-InGaAs-70 series, from OSI Optoelectronics, are high-speed 70µm InGaAs photodetector integrated with wide dynamic range transimpedance amplifier. Combining the detector with the TIA in a hermetically sealed 4 pin TO-46 package provides ideal conditions for high-speed signal detection and amplification.
Low capacitance, low dark current and high responsivity of... (read more)
Planar Diffused IR Suppressed Photodiodes from OSI Optoelectronics.
Generally sensitive between 200 to 1100nm these detectors are typically packaged with quartz or UV transmissive glass window. They exhibit low dark current and can be reverse biased for lower capacitance and faster rise time performance.
Planar diffused structure (UV-D Series) UV... (read more)
OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the UV region of electromagnetic spectrum. Inversion layer structure UV enhanced photodiodes exhibit 100% internal quantum efficiency and are well suited for low intensity ligh... (read more)
OSI Optoelectronics, has many years of experience in providing the best standard and custom X-ray detector devices for industrial, security and medical fields. Our proprietary detectors are designed and manufactured in-house with outstanding track records of reliability. Our broad manufacturing experience with X-ray detector modules has provided the high level of R&D and engineering... (read more)
OSI Laser Diode, Inc. (LDI), an OSI Systems Company, introduces two unique fiber-coupled lasers for optical test instruments available in compact, dual-wavelength (MCW) or triple-wavelength (TCW) packages. Both the MCW Combiner dual-wavelength instrument laser series and the TCW TriBiner triple-wavelength instrument laser series offer high peak optical power and feature divisional wavele... (read more)
High-Reliability, High Power, Monolithic Stack Pulsed Laser Diodes
OSI Laser Diode, Inc. (LDI), an OSI Systems Company, introduced a product family of high power monolithic stack pulsed laser diodes for a wide variety of military/defense, industrial, automotive, and machine vision applications. Single and stacked pulsed laser diodes are available up to 375W and fibe... (read more)
OSI Laser Diode, Inc. (LDI), an OSI Systems Company, introduced the CVLL Series of extremely high brightness 1550nm pulsed laser diodes. The new eye safe devices feature low divergence and high brightness to deliver reliable and stable output power (up to 75 watts) from minus 40 degrees C to plus 85 degrees C. Hermetically-sealed and RoHS compliant, the new 1550nm pulsed laser diodes are... (read more)
OSI OptoElectronics (www.osioptoelectronics.com), an OSI Systems Company, global suppliers of high performing standard and OEM photodiodes, high power light sources, optoelectronic components, and value-added assemblies, announces expanded contract manufacturing capabilities. (read more)
The CVN Series of high power monolithic stack, pulsed laser diodes features highly reliable, high efficiency performance, the new product family offers stable operation in extreme environmental conditions, from -40 degrees C to +85 degrees C. The diodes operate from 895 nm to 915 nm, with a typical peak wavelength at 905 nm. (read more)
OSI optoelectronics introduces new family of Planar Diffused UV-Enhanced Photodiode: the UV–D/EQ and UV–D/EQC Series. The new Silicon is processed for enhanced responsivity over 200-400nm and sensitivity down to 190nm. The D/EK series offer hermetic package alternative at a lower cost and is sensitive down to 320nm." (read more)
OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the UV region of electromagnetic spectrum. (read more)