Diodes are electronic components that conduct electric current in only one direction, functioning as a one-way valve. Diodes are manufactured using semiconductor materials such as silicon, germanium or selenium and are used as voltage regulators, signal rectifiers, oscillators and signal modulators / demodulators.
Gate turn-off thyristors (GTOs) are four-layer PNPN devices that act as switches, rectifiers, and voltage regulators. Like other thyristors, GTOs can be turned on by the application of a positive gate signal (g > 0); however, unlike other more conventional devices that can be turned off only at a zero crossing of current, GTOs can be turned off at any time by the application of a gate signal equal to zero.
Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching).
Power diodes are used mainly in high-power applications. They are built with large P-N junctions in order to pass large amounts of current and dissipate large amounts of heat.
Power rectifiers are electrical devices that convert alternating current (AC) to direct current (DC). They are an integral part of telecom rectifiers for the telecommunications industry, and in battery chargers, DC power systems, and other power system devices.
Silicon controlled rectifiers (SCR) are four-layer (PNPN) thyristors with three terminals: an input control terminal (gate), an output terminal (anode), and a terminal common to both the input and output (cathode). SCRs are used mainly with high voltages and currents, often to control alternating current (AC) where the change of sign causes the device to switch off automatically.
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