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RF bipolar transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
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Current limiting diodes (CLD) regulate current over a wide voltage range. There are several types of current limiting diodes (CLD). Examples include a current regulator diode, constant current diode, and current limit diodes.
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Darlington transistors (Darlington pairs) are semiconductor devices that combine two bipolar transistors in a single device. They provide high current gain (commonly written ß) and require less space than configurations that use two discrete transistors.
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Diode arrays are composed of multiple discrete (usually unconnected) diodes on a single silicon chip. Diode arrays are important semiconductor products because they save assembly time and improve reliability over individually packaged diodes. In general, diode arrays use four or more diodes in a single package.
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Diodes are electronic components that conduct electric current in only one direction, functioning as a one-way valve. Diodes are manufactured using semiconductor materials such as silicon, germanium or selenium and are used as voltage regulators, signal rectifiers, oscillators and signal modulators / demodulators.
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General-purpose diodes are electric components that conduct electric current in only one direction, functioning similarly to a one-way valve.
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Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region.
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Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
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Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals.
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Power electronics devices are solid state devices or transistors capable of modulating or converting electrical power.
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Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important.
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Programmable uni-junction transistors (PUT) are three-terminal thyristors that are triggered into conduction when the voltage at the anode exceeds the voltage at the gate. The PUT is similar to the UJT, but its intrinsic standoff ratio can be set by two external resistors. Hence, the term "programmable" is used.
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Rectifier diodes are designed for use in rectification circuits. Rectifiers are used to convert AC to DC.
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RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
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Schottky diodes in their simplest form consist of a metal layer that contacts a semiconductor element. The metal / semiconductor junctions exhibit rectifying behavior (i.e., the current passes through the structure more readily with one polarity than the other).
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Silicon controlled rectifiers (SCR) are four-layer (PNPN) thyristors with three terminals: an input control terminal (gate), an output terminal (anode), and a terminal common to both the input and output (cathode). SCRs are used mainly with high voltages and currents, often to control alternating current (AC) where the change of sign causes the device to switch off automatically.
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Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type.
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Specialty diodes are specialty or proprietary products and accessories related to diodes.
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Specialty transistors are specialty or proprietary products and accessories related to transistors.
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Surge protective devices (SPDs) are designed to protect equipment against temporary excess voltage and/or current.
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Surge suppressors are used to protect equipment from transient overvoltages in power, data, and telephone circuits.
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Thyristors are a class of four-layer (PNPN) semiconductor devices that act as switches, rectifiers, or voltage regulators.
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Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
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Triacs are three-terminal silicon devices that are configured in an inverse parallel arrangement to provide load current during both halves of the AC supply voltage. They are often used to control motor speed.
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Unijunction transistors (UJT) are three-terminal devices that exhibit a negative resistance characteristic.
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Zener diodes are PN junction devices that are designed to operate in the reverse-breakdown region.
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