EEPROM Memory Chips Datasheets

AT17C002 -- 31855
from Atmel Corporation

2-Mb FPGA Configuration EEPROM (5V) [See More]

  • Memory Category: EEPROM
  • Data Rate: 15
  • Density: 2000
Memory - Configuration Proms for FPGAs -- AT17C002-10CC-ND [AT17C002-10CC from Microchip Technology, Inc.]
from Digi-Key Electronics

IC SRL CONFIG EEPROM 2M 8LAP [See More]

  • Memory Category: EEPROM
  • Package Type: 8-TDFN
  • Density: 2000
  • Supply Voltage: 5V; 4.75 V ~ 5.25 V
256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM -- X28HC256JI-12
from Intersil Corporation

The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil ’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing... [See More]

  • Memory Category: EEPROM
  • Standby Current: 0.5000
  • Operating Current: 60
  • Access Time: 90
128 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 -- M93C56TLM8 [M93C56TLM8 from Fairchild Semiconductor]
from Karl Kruse GmbH & Co. KG

Karl Kruse  is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop... [See More]

  • Memory Category: EEPROM
  • Package Type: PDSO8
1 KBit I²C™ Bus Serial EEPROM -- 24AA01
from Microchip Technology, Inc.

The Microchip Technology Inc. 24AA01/24LC01B (24XX01*) is a 1 Kbit Electrically Erasable PROM. The device is organized as one block of 128 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V with standby and active currents of only 1 μA and 1 mA,... [See More]

  • Memory Category: EEPROM
  • Package Type: SOIC (optional feature); TSSOP (optional feature); MSOP, SC-70, DFN, TDFN, SOT-23, PDIP
  • Density: 1
  • Pins: 5 to 8
EEPROM Memory -- ADP5303-EVALZ [ADP5303-EVALZ from Analog Devices, Inc.]
from Richardson RFPD

Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies. [See More]

  • Memory Category: EEPROM
105°C Operation SPI BUS EEPROM -- BR25A1MF-3M
from ROHM Semiconductor USA, LLC

BR25A1MF-3M is a 1Mbit Serial EEPROM of SPI BUS Interface. [See More]

  • Memory Category: EEPROM
  • Number of Words: 128
  • Density: 1024
  • Bits per Word: 8
1035095 [CAT24C512WI-GT3 from ON Semiconductor L.L.C.]
from RS Components, Ltd.

EEPROM,512kbit,64Kx8,1MHz I2C,SOIC8 - Memory Chips - EEPROM Memory Chips [See More]

  • Memory Category: EEPROM
  • Bits per Word: 8
  • Density: 4096
  • Pins: 8
TT Semiconductor Parallel EEPROM -- TTE28HT010
from TT Semiconductor, Inc.

Density: 1M. Org: 128k x 8. Vcc: 5v. Speed (nS): 200,250 [See More]

  • Memory Category: EEPROM
  • Number of Words: 128
  • Density: 1000
  • Bits per Word: 8
1024K, 128K X 8 , 1.8V SER EE IND -- 70045895 [25AA1024-I/P from Microchip Technology, Inc.]
from Allied Electronics, Inc.

1024K, 128K X 8 , 1.8V SER EE IND [See More]

  • Memory Category: EEPROM
  • Package Type: PDIP
  • Density: 1024
  • Access Time: 50
IP Products -- 16K EEPROM
from Custom Silicon Solutions, Inc.

This nonvolatile memory is a 16K bit EEPROM macro cell, organized 2K by 8. It may be re-configured for sizes from 1K to 64K bits and from 8 to 32 bits per word. It features low power, a wide supply range, a synchronous read mode and three programming modes: Page Erase, Block Erase and Page Write. A... [See More]

  • Memory Category: EEPROM
EEPROM 5V -- 5962-3826701MYX
from E2V Technologies (UK), Ltd.

128K X 8 EEPROM 5V, 250 ns, CQCC44 [See More]

  • Memory Category: PROM; EEPROM
  • Number of Words: 128
  • Density: 1049
  • Bits per Word: 8
DS1971 - 256 bit EEPROM iButton -- DS1971
from Embedded Data Systems

Key Features. • 256-bit of EEPROM organized as one page. • 64-bit one-time programmable application register. • 1-Wire interface reduces power, control, and all data signals to a single data pin. • 8-bit family code specifies communication requirements to reader. •... [See More]

  • Memory Category: EEPROM
1095782 [AT28C256-15PU from Atmel Corporation]
from Farnell Europe

EEPROM PARALLEL 256K, 28C256 [See More]

  • Memory Category: EEPROM
  • Package Type: DIP
  • Density: 256
  • Pins: 28
EEPROM 5V -- FT28C010-12EMB
from Force Technologies Ltd.

128K X 8 EEPROM 5V, 120 ns, CQCC32 [See More]

  • Memory Category: PROM; EEPROM
  • Number of Words: 128
  • Density: 1049
  • Bits per Word: 8
1-WIRE SERIAL EEPROM -- DS1961S-F5#
from Hytronics

1K X 1 1-WIRE SERIAL EEPROM, MEDB2 [See More]

  • Memory Category: PROM; EEPROM
  • Number of Words: 1
  • Density: 1
  • Bits per Word: 1
I2C/2-WIRE SERIAL EEPROM -- IS24C01-3G
from Integrated Silicon Solution, Inc.

128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 [See More]

  • Memory Category: PROM; EEPROM
  • Number of Words: 128
  • Density: 1
  • Bits per Word: 8
3-WIRE SERIAL EEPROM -- MX25L4005AM2C-12G
from Macronix International Co., Ltd.

4M X 1 3-WIRE SERIAL EEPROM, PDSO8 [See More]

  • Memory Category: PROM; EEPROM
  • Number of Words: 4000
  • Density: 4194
  • Bits per Word: 1
1-Wire EEPROM -- DS28E05
from Maxim Integrated Products, Inc.

The DS28E05 is a 112-byte user-programmable EEPROM organized as 7 pages of 16 bytes each. Memory pages can be individually set to write protected or EPROM emulation mode through protection byte settings. Each part has its own guaranteed unique 64-bit ROM identification number (ROM ID) that is... [See More]

  • Memory Category: EEPROM
  • Package Type: SOT, TSOC
  • Density: 1
  • Pins: 3 to 6
1 Megabit (128K x 8-Bit) EEPROM -- 28C010T
from Maxwell Technologies, Inc.

Maxwell Technologies ’ 28C010T high-density 1 Megabit (128K x 8-Bit) EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28C010T is capable of in-system electrical byte and page programmability. It has a 128-byte page programming... [See More]

  • Memory Category: EEPROM
  • Number of Words: 128
  • Density: 1000
  • Bits per Word: 8
EEPROM 3V -- AS8ERLC128K32SQ-250/SPACE
from Micross Components, Inc.

128K X 32 EEPROM 3V, 250 ns, CQFP68 [See More]

  • Memory Category: PROM; EEPROM
  • Number of Words: 128
  • Density: 4194
  • Bits per Word: 32
55T4199 [25A512-I/P from Microchip Technology, Inc.]
from Newark / element14

512k, 64K X 8 , 1.8V SER EE IND 8 PDIP .300in TUBE [See More]

  • Memory Category: EEPROM
Radiation Hardened and High Temperature EEPROMS
from Northrop Grumman Corporation

Northrop Grumman offers the only Radiation Hardened EEPROMs with the ability to re-write to memory. The radiation hardened robustness of the design (performed by Sandia National Laboratories) and fabrication process is flight proven with more than 10,000 radiation hardened EEPROM devices previously... [See More]

  • Memory Category: EEPROM
  • Density: 64 to 1000
Programmable ROM -- CA-T25128LE-T2
from ON Semiconductor L.L.C.

16K X 8 SPI BUS SERIAL EEPROM, PDIP8 [See More]

  • Memory Category: EEPROM
  • Number of Words: 16
  • Density: 131
  • Bits per Word: 8
EEPROM 5V -- 5962-8751401XX
from Pyramid Semiconductor Corp.

8K X 8 EEPROM 5V, 200 ns, CDIP28 [See More]

  • Memory Category: PROM; EEPROM
  • Number of Words: 8
  • Density: 66
  • Bits per Word: 8
EEPROM 5V -- 5962-9323501MUA
from Rochester Electronics

256K X 8 EEPROM 5V, 200 ns, CDFP32 [See More]

  • Memory Category: PROM; EEPROM
  • Number of Words: 256
  • Density: 2097
  • Bits per Word: 8
EEPROM 5V -- KM2816A-35
from Samsung Semiconductor Division

2K X 8 EEPROM 5V, 350 ns, PDIP24 [See More]

  • Memory Category: PROM; EEPROM
  • Number of Words: 2
  • Density: 16
  • Bits per Word: 8
3-WIRE SERIAL EEPROM -- S-29530ADPA
from Seiko Instruments USA, Inc.

1K X 16 3-WIRE SERIAL EEPROM, PDIP8 [See More]

  • Memory Category: PROM; EEPROM
  • Number of Words: 1
  • Density: 16
  • Bits per Word: 16
EEPROM 12V -- W27C512P-45Z
from Winbond Electronics Corporation America

64K X 8 EEPROM 12V, 45 ns, PQCC32 [See More]

  • Memory Category: PROM; EEPROM
  • Number of Words: 64
  • Density: 524
  • Bits per Word: 8
EEPROM 5V -- W28C256FHT
from Winchester Electronics Corporation

32K X 8 EEPROM 5V, DFP32 [See More]

  • Memory Category: PROM; EEPROM
  • Number of Words: 32
  • Density: 262
  • Bits per Word: 8