1.8 V Memory Chips Datasheets

Logic - FIFOs Memory -- 428-3186-ND [CYF0018V18L-133BGXI from Cypress Semiconductor Corp.]
from Digi-Key Electronics

18M PROGRAMMABLE FIFO 209FBGA [See More]

  • Supply Voltage: 1.8V; 1.7 V ~ 1.9 V
  • Density: 18000
  • Memory Category: FIFO
  • Package Type: BGA; 209-BGA
16K x16 Low Power Dual-Port RAM -- 70P264
from Integrated Device Technology

The IDT70P264 is a very low power 16K x 16 Dual-Port Static RAM. The IDT70P264 is designed to be used as a stand-alone 256K-bit Dual-Port SRAM. This device provides two independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to... [See More]

  • Supply Voltage: 1.8V
  • Density: 256
  • Memory Category: DPRAM
  • Number of Words: 16
DeepCover Secure Authenticator with 1-Wire SHA-256 and 2Kb User EEPROM -- DS28EL22
from Maxim Integrated Products, Inc.

DeepCover Secure Authenticator with 1-Wire SHA-256 and 2Kb User EEPROM [See More]

  • Supply Voltage: 1.8V
  • Density: 16
  • Memory Category: EEPROM
  • Package Type: TDFN-EP
1 KBit I²C™ Bus Serial EEPROM -- 24AA01
from Microchip Technology, Inc.

The Microchip Technology Inc. 24AA01/24LC01B (24XX01*) is a 1 Kbit Electrically Erasable PROM. The device is organized as one block of 128 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V with standby and active currents of only 1 μA and 1 mA,... [See More]

  • Supply Voltage: 1.8V; 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V; 1.7-5.5 V
  • Density: 1
  • Memory Category: EEPROM
  • Package Type: SOIC (optional feature); TSSOP (optional feature); MSOP, SC-70, DFN, TDFN, SOT-23, PDIP
Dynamic RAM -- IS42VM16400K-75BLI [IS42VM16400K-75BLI from Integrated Silicon Solution, Inc.]
from Mouser Electronics, Inc.

4M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 [See More]

  • Supply Voltage: 1.8V
  • Density: 67109
  • Memory Category: DRAM Chip
  • Number of Words: 4000
Dynamic RAM -- IS43DR16160A-37CBL [IS43DR16160A-37CBL from Integrated Silicon Solution, Inc.]
from Perfect Parts Corporation

16M X 16 DDR DRAM, 0.5 ns, PBGA84 [See More]

  • Supply Voltage: 1.8V
  • Density: 268435
  • Memory Category: DRAM Chip
  • Number of Words: 16000
6678110 [24AA014H-I/MS from Microchip Technology, Inc.]
from RS Components, Ltd.

Density:1KBit; Organization:128x8; Typical Operating Supply Voltage:1.8, 2.5, 3.3, 5V; Interface Type:Serial-I2C; Data Retention:200years; Hardware Data Protection:Yes; Supplier Package:MSOP; Pin Count:8; Maximum Operating Current:3mA; Maximum Operating Frequency:0.4MHz [See More]

  • Supply Voltage: 1.8V; 2.5V; 3.3V; 5V
  • Density: 1
  • Memory Category: EEPROM
  • Number of Words: 128
SM28VLT32-HT 32-Mbit High-Temp Flash Memory with Serial Peripheral Interface (SPI) Bus -- SM28VLT32SHKN
from Texas Instruments

32-Mbit High-Temp Flash Memory with Serial Peripheral Interface (SPI) Bus 14-CFP -55 to 210 [See More]

  • Supply Voltage: 1.8V; 3.3V
  • Density: 32000
  • Memory Category: Flash
  • Package Type: CFP,XCEPT
PF128K09E
from Chingis Technology Corp.

The PF128K09E is a 128Kbyte, (128Kx8) Embedded Flash Macro (EFM). The macro uses a single 1.8 volt power supply to perform both read and in-system programming. The macro has a built-in internal charge pump to generate high voltage for write(program) and erase operation. It does not require the 12.0... [See More]

  • Supply Voltage: 1.8V
  • Density: 1024
  • Memory Category: Flash
  • Number of Words: 128
DDR DRAM -- EDD20323ABH-6ELS-F
from Elpida Memory, Inc.

64M X 32 DDR DRAM, 5 ns, PBGA90 [See More]

  • Supply Voltage: 1.8V
  • Density: 2147484
  • Memory Category: DRAM Chip
  • Number of Words: 64000
1362647 [AT24C1024BW-SH25-B from Atmel Corporation]
from Farnell Europe

EEPROM SERIAL 2.7-5.5V 1M, 24C1024 [See More]

  • Supply Voltage: 1.8V; 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V; 5.5V, 2.5V
  • Density: 1000
  • Memory Category: EEPROM
  • Package Type: SOIC
CACHE SRAM -- GS816018AT-225
from GSI Technology

1M X 18 CACHE SRAM, 6 ns, PQFP100 [See More]

  • Supply Voltage: 1.8V
  • Density: 18874
  • Memory Category: SRAM Chip
  • Number of Words: 1000
1-WIRE SERIAL EEPROM -- DS28E02Q+T&R
from Hytronics

1K X 1 1-WIRE SERIAL EEPROM, PDSO6 [See More]

  • Supply Voltage: 1.8V
  • Density: 1
  • Memory Category: PROM; EEPROM
  • Number of Words: 1
DDR SRAM -- IBM041816CHLBC-25
from IBM Microelectronics

1M X 18 DDR SRAM, 1.8 ns, PBGA153 [See More]

  • Supply Voltage: 1.8V
  • Density: 18874
  • Memory Category: SRAM Chip
  • Number of Words: 1000
DDR DRAM -- IS43DR16128-3DBL
from Integrated Silicon Solution, Inc.

128M X 16 DDR DRAM, 0.45 ns, PBGA84 [See More]

  • Supply Voltage: 1.8V
  • Density: 2147484
  • Memory Category: DRAM Chip
  • Number of Words: 128000
FLASH 1.8V PROM -- MX25U6435FM2I-10G
from Macronix International Co., Ltd.

16M X 4 FLASH 1.8V PROM, PDSO8 [See More]

  • Supply Voltage: 1.8V
  • Density: 67109
  • Memory Category: Flash; PROM
  • Number of Words: 16000
DDR DRAM -- W3H128M72E-2533SBI
from Microsemi Corp.

128M X 72 DDR DRAM, 1.35 ns, PBGA208 [See More]

  • Supply Voltage: 1.8V
  • Density: 9663676
  • Memory Category: DRAM Chip
  • Number of Words: 128000
DDR DRAM -- AS4DDR232M72PBG-38/IT
from Micross Components, Inc.

32M X 72 DDR DRAM, 0.5 ns, PBGA255 [See More]

  • Supply Voltage: 1.8V
  • Density: 2415919
  • Memory Category: DRAM Chip
  • Number of Words: 32000
DDR DRAM -- NT5TU128M8DE-AC
from Nanya Technology Corporation

128M X 8 DDR DRAM, 0.4 ns, PBGA60 [See More]

  • Supply Voltage: 1.8V
  • Density: 1073742
  • Memory Category: DRAM Chip
  • Number of Words: 128000
IC, EEPROM 128BIT SERIAL 400KHZ SOT-23-5 -- 89H3038 [24AA00T-I/OTG from Microchip Technology, Inc.]
from Newark / element14

IC, EEPROM 128BIT SERIAL 400KHZ SOT-23-5; Memory Size:128bit; Memory Configuration:16 x 8; IC Interface Type:I2C; Clock Frequency:400kHz; Supply Voltage Range:1.7V to 5.5V; Memory Case Style:SOT-23; No. of Pins:5 [See More]

  • Supply Voltage: 1.8V; 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V
  • Density: 0
  • Memory Category: EEPROM
  • Package Type: SOT-23
Programmable ROM -- CAT24AA04TDI-GT10
from ON Semiconductor L.L.C.

512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO5 [See More]

  • Supply Voltage: 1.8V
  • Density: 4
  • Memory Category: EEPROM
  • Bits per Word: 8
DDR DRAM -- K4D553235F-VC2A0
from Samsung Semiconductor Division

8M X 32 DDR DRAM, 0.55 ns, PBGA144 [See More]

  • Supply Voltage: 1.8V
  • Density: 268435
  • Memory Category: DRAM Chip
  • Number of Words: 8000
NAND Flash Memory
from SK Hynix

System performance depends highly on eMMC performance, such as random read and write IOPS. SK hynix eMMC provides the best IOPs performance by using advanced FTL algorithm. Furthermore, features of eMMC5.0 allows for an even greater improvement in performance. [See More]

  • Supply Voltage: 1.8V; 2.7V; 3V; 3.3V; 3.6V
  • Density: 512000 to 1024000000
  • Memory Category: Flash
  • Operating Temperature: -45 to 85
DDR DRAM -- W947D6HBHX6E
from Winbond Electronics Corporation America

8M X 16 DDR DRAM, 5 ns, PBGA60 [See More]

  • Supply Voltage: 1.8V
  • Density: 134218
  • Memory Category: DRAM Chip
  • Number of Words: 8000