AT18F002 -- 32191
from Atmel Corporation

2-Mb FPGA Configuration Flash Memory with ISP [See More]

  • Supply Voltage: 1.8V; 2.5V; 3.3V
  • Density: 2000
  • Memory Category: Flash
  • Data Rate: 33
Logic - FIFOs Memory -- 296-33079-5-ND [CD74HC40105M from Texas Instruments High-Performance Analog]
from Digi-Key Corporation

IC FIFO REGISTER 16-SOIC [See More]

  • Supply Voltage: 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V; 2 V ~ 6 V
  • Density: 0
  • Memory Category: FIFO
  • Package Type: SOIC; 16-SOIC (0.154", 3.90mm Width)
DUAL-PORT SRAM -- 70T3319S133BFGI
from Integrated Device Technology

256K X 18 DUAL-PORT SRAM, 4.2 ns, CBGA208 [See More]

  • Supply Voltage: 2.5V
  • Density: 4719
  • Memory Category: SRAM Chip
  • Number of Words: 256
1 KBit I²C™ Bus Serial EEPROM -- 24AA01
from Microchip Technology, Inc.

The Microchip Technology Inc. 24AA01/24LC01B (24XX01*) is a 1 Kbit Electrically Erasable PROM. The device is organized as one block of 128 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V with standby and active currents of only 1 μA and 1 mA,... [See More]

  • Supply Voltage: 1.8V; 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V; 1.7-5.5 V
  • Density: 1
  • Memory Category: EEPROM
  • Package Type: SOIC (optional feature); TSSOP (optional feature); MSOP, SC-70, DFN, TDFN, SOT-23, PDIP
Dynamic RAM -- AS4C16M16D1-5TCN [AS4C16M16D1-5TCN from Alliance Memory, Inc.]
from Mouser Electronics, Inc.

16M X 16 SYNCHRONOUS DRAM, PDSO66 [See More]

  • Supply Voltage: 2.5V
  • Density: 268435
  • Memory Category: DRAM Chip
  • Number of Words: 16000
Dynamic RAM -- AS4C16M16D1-5TCN [AS4C16M16D1-5TCN from Alliance Memory, Inc.]
from Perfect Parts Corporation

16M X 16 SYNCHRONOUS DRAM, PDSO66 [See More]

  • Supply Voltage: 2.5V
  • Density: 268435
  • Memory Category: DRAM Chip
  • Number of Words: 16000
Automotive I2C BUS 16Kbit(2048x8bit) EEPROM -- BR24A16F-WM
from ROHM Semiconductor USA, LLC

A serial EEPROM(Electrically Erasable Programmable Read Only Memory) is non-volatile memory that can be overwritten electrically, in units of bytes, and is most suitable for data storage use. ROHM's high reliability serial EEPROMs are among the top of their class. They command a large market share... [See More]

  • Supply Voltage: 2.5V; 5.5
  • Density: 16
  • Memory Category: EEPROM
  • Number of Words: 2
LP2995LQ -- LP2995
from Texas Instruments High-Performance Analog

LDO, ic memory chips [See More]

  • Supply Voltage: 2.5V; 5
  • Package Type: LLP
  • Memory Category: DRAM Chip; SRAM Chip
  • Operating Temperature: 0 to 125
STANDARD SRAM -- AS7C25512PFD32A-133BC
from Alliance Memory, Inc.

512K X 32 STANDARD SRAM, 3.8 ns, PBGA165 [See More]

  • Supply Voltage: 2.5V
  • Density: 16777
  • Memory Category: SRAM Chip
  • Number of Words: 512
Pm25LD010
from Chingis Technology Corp.

The Pm25LD010 series provides 3-pin, SPI compatiable interface. The operation voltage is cover 2.3V~3.6V. [See More]

  • Supply Voltage: 2.5V; 2.7V; 3V; 3.3V; 3.6V
  • Density: 1000
  • Memory Category: Flash
  • Package Type: SOIC; TSSOP
DDR DRAM -- M13S128168A-5TIG
from Elite Semiconductor Memory Technology, Inc.

8M X 16 DDR DRAM, 0.7 ns, PDSO66 [See More]

  • Supply Voltage: 2.5V
  • Density: 134218
  • Memory Category: DRAM Chip
  • Number of Words: 8000
DDR DRAM -- EDD1216AATA-6B-E
from Elpida Memory, Inc.

8M X 16 DDR DRAM, 0.7 ns, PDSO66 [See More]

  • Supply Voltage: 2.5V
  • Density: 134218
  • Memory Category: DRAM Chip
  • Number of Words: 8000
1362647 [AT24C1024BW-SH25-B from Atmel Corporation]
from Farnell Europe

EEPROM SERIAL 2.7-5.5V 1M, 24C1024 [See More]

  • Supply Voltage: 1.8V; 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V; 5.5V, 2.5V
  • Density: 1000
  • Memory Category: EEPROM
  • Package Type: SOIC
CACHE SRAM -- GS8128436B-250IT
from GSI Technology

4M X 36 CACHE SRAM, 6.5 ns, PBGA119 [See More]

  • Supply Voltage: 2.5V
  • Density: 150995
  • Memory Category: SRAM Chip
  • Number of Words: 4000
DDR SRAM -- IBM041816CBLBC-22
from IBM Microelectronics

1M X 18 DDR SRAM, 2.1 ns, PBGA153 [See More]

  • Supply Voltage: 2.5V
  • Density: 18874
  • Memory Category: SRAM Chip
  • Number of Words: 1000
CACHE SRAM -- IS61VF51236A-7.5TQ
from Integrated Silicon Solution, Inc.

512K X 36 CACHE SRAM, 7.5 ns, PQFP100 [See More]

  • Supply Voltage: 2.5V
  • Density: 18874
  • Memory Category: SRAM Chip
  • Number of Words: 512
FLASH 2.7V PROM -- MX25V8005MI-20G
from Macronix International Co., Ltd.

8M X 1 FLASH 2.7V PROM, PDSO8 [See More]

  • Supply Voltage: 2.5V
  • Density: 8389
  • Memory Category: Flash; PROM
  • Number of Words: 8000
DDR DRAM -- W3E16M64S-266BI
from Microsemi Corp.

16M X 64 DDR DRAM, 0.75 ns, PBGA219 [See More]

  • Supply Voltage: 2.5V
  • Density: 1073742
  • Memory Category: DRAM Chip
  • Number of Words: 16000
DDR DRAM -- AS4DDR32M16DG-75/IT
from Micross Components, Inc.

32M X 16 DDR DRAM, 0.75 ns, PDSO66 [See More]

  • Supply Voltage: 2.5V
  • Density: 536871
  • Memory Category: DRAM Chip
  • Number of Words: 32000
DDR DRAM -- NT5DS16M16CS-5T
from Nanya Technology Corporation

16M X 16 DDR DRAM, 0.65 ns, PDSO66 [See More]

  • Supply Voltage: 2.5V
  • Density: 268435
  • Memory Category: DRAM Chip
  • Number of Words: 16000
387231 [M24128-BRMN6P from STMicroelectronics, Inc.]
from RS Components, Ltd.

Density:128KBit; Organization:16Kx8; Programming Voltage:2.5, 3.3, 5V; Typical Operating Supply Voltage:2.5, 3.3, 5V; Interface Type:Serial-I2C; Data Retention:40years; Hardware Data Protection:Yes; Supplier Package:SO N; Pin Count:8; Maximum Random Access Time:900ns [See More]

  • Supply Voltage: 2.5V; 3.3V; 5V
  • Density: 128
  • Memory Category: EEPROM
  • Number of Words: 16
CACHE SRAM -- K7A161830B-PC160
from Samsung Semiconductor Division

1M X 18 CACHE SRAM, 3.5 ns, PQFP100 [See More]

  • Supply Voltage: 2.5V
  • Density: 18874
  • Memory Category: SRAM Chip
  • Number of Words: 1000
MICROWIRE BUS SERIAL EEPROM -- S-29394ADP
from Seiko Instruments USA, Inc.

256 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8 [See More]

  • Supply Voltage: 2.5V
  • Density: 4
  • Memory Category: PROM; EEPROM
  • Number of Words: 256
DDR DRAM -- TC59LM806CFT-50
from Toshiba America Electronic Components, Inc.

32M X 8 DDR DRAM, 0.65 ns, PDSO66 [See More]

  • Supply Voltage: 2.5V
  • Density: 268435
  • Memory Category: DRAM Chip
  • Number of Words: 32000
DDR DRAM -- W9412G2IB-6I
from Winbond Electronics Corporation America

4M X 32 DDR DRAM, 0.7 ns, PBGA144 [See More]

  • Supply Voltage: 2.5V
  • Density: 134218
  • Memory Category: DRAM Chip
  • Number of Words: 4000