2.5 V Memory Chips Datasheets

Logic - FIFOs Memory -- 296-33079-5-ND [CD74HC40105M from Texas Instruments High-Performance Analog]
from Digi-Key Electronics

IC FIFO REGISTER 16-SOIC [See More]

  • Supply Voltage: 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V; 2 V ~ 6 V
  • Density: 0
  • Memory Category: FIFO
  • Package Type: SOIC; 16-SOIC (0.154", 3.90mm Width)
1024K x 36 Sync, 3.3V/2.5V Dual-Port RAM -- 70T3509M
from Integrated Device Technology

The 70T3509M is a high-speed 1024K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low... [See More]

  • Supply Voltage: 2.5V
  • Density: 36864
  • Memory Category: DPRAM
  • Number of Words: 1024
1 KBit I²C™ Bus Serial EEPROM -- 24AA01
from Microchip Technology, Inc.

The Microchip Technology Inc. 24AA01/24LC01B (24XX01*) is a 1 Kbit Electrically Erasable PROM. The device is organized as one block of 128 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V with standby and active currents of only 1 μA and 1 mA,... [See More]

  • Supply Voltage: 1.8V; 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V; 1.7-5.5 V
  • Density: 1
  • Memory Category: EEPROM
  • Package Type: SOIC (optional feature); TSSOP (optional feature); MSOP, SC-70, DFN, TDFN, SOT-23, PDIP
Dynamic RAM -- AS4C16M16D1-5TCN [AS4C16M16D1-5TCN from Alliance Memory, Inc.]
from Mouser Electronics, Inc.

16M X 16 SYNCHRONOUS DRAM, PDSO66 [See More]

  • Supply Voltage: 2.5V
  • Density: 268435
  • Memory Category: DRAM Chip
  • Number of Words: 16000
Dynamic RAM -- AS4C16M16D1-5TCN [AS4C16M16D1-5TCN from Alliance Memory, Inc.]
from Perfect Parts Corporation

16M X 16 SYNCHRONOUS DRAM, PDSO66 [See More]

  • Supply Voltage: 2.5V
  • Density: 268435
  • Memory Category: DRAM Chip
  • Number of Words: 16000
105°C Operation SPI BUS EEPROM -- BR25A1MF-3M
from ROHM Semiconductor USA, LLC

BR25A1MF-3M is a 1Mbit Serial EEPROM of SPI BUS Interface. [See More]

  • Supply Voltage: 2.5V; 5.5
  • Density: 1024
  • Memory Category: EEPROM
  • Number of Words: 128
STANDARD SRAM -- AS7C25512PFD32A-133BC
from Alliance Memory, Inc.

512K X 32 STANDARD SRAM, 3.8 ns, PBGA165 [See More]

  • Supply Voltage: 2.5V
  • Density: 16777
  • Memory Category: SRAM Chip
  • Number of Words: 512
Pm25LD010
from Chingis Technology Corp.

The Pm25LD010 series provides 3-pin, SPI compatiable interface. The operation voltage is cover 2.3V~3.6V. [See More]

  • Supply Voltage: 2.5V; 2.7V; 3V; 3.3V; 3.6V
  • Density: 1000
  • Memory Category: Flash
  • Package Type: SOIC; TSSOP
DDR DRAM -- M13S128168A-5TIG
from Elite Semiconductor Memory Technology, Inc.

8M X 16 DDR DRAM, 0.7 ns, PDSO66 [See More]

  • Supply Voltage: 2.5V
  • Density: 134218
  • Memory Category: DRAM Chip
  • Number of Words: 8000
DDR DRAM -- EDD1216AATA-6B-E
from Elpida Memory, Inc.

8M X 16 DDR DRAM, 0.7 ns, PDSO66 [See More]

  • Supply Voltage: 2.5V
  • Density: 134218
  • Memory Category: DRAM Chip
  • Number of Words: 8000
1362647 [AT24C1024BW-SH25-B from Atmel Corporation]
from Farnell Europe

EEPROM SERIAL 2.7-5.5V 1M, 24C1024 [See More]

  • Supply Voltage: 1.8V; 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V; 5.5V, 2.5V
  • Density: 1000
  • Memory Category: EEPROM
  • Package Type: SOIC
CACHE SRAM -- GS8128436B-250IT
from GSI Technology

4M X 36 CACHE SRAM, 6.5 ns, PBGA119 [See More]

  • Supply Voltage: 2.5V
  • Density: 150995
  • Memory Category: SRAM Chip
  • Number of Words: 4000
DDR SRAM -- IBM041816CBLBC-22
from IBM Microelectronics

1M X 18 DDR SRAM, 2.1 ns, PBGA153 [See More]

  • Supply Voltage: 2.5V
  • Density: 18874
  • Memory Category: SRAM Chip
  • Number of Words: 1000
CACHE SRAM -- IS61VF51236A-7.5TQ
from Integrated Silicon Solution, Inc.

512K X 36 CACHE SRAM, 7.5 ns, PQFP100 [See More]

  • Supply Voltage: 2.5V
  • Density: 18874
  • Memory Category: SRAM Chip
  • Number of Words: 512
FLASH 2.7V PROM -- MX25V8005MI-20G
from Macronix International Co., Ltd.

8M X 1 FLASH 2.7V PROM, PDSO8 [See More]

  • Supply Voltage: 2.5V
  • Density: 8389
  • Memory Category: Flash; PROM
  • Number of Words: 8000
DDR DRAM -- W3E16M64S-266BI
from Microsemi Corp.

16M X 64 DDR DRAM, 0.75 ns, PBGA219 [See More]

  • Supply Voltage: 2.5V
  • Density: 1073742
  • Memory Category: DRAM Chip
  • Number of Words: 16000
DDR DRAM -- AS4DDR32M16DG-75/IT
from Micross Components, Inc.

32M X 16 DDR DRAM, 0.75 ns, PDSO66 [See More]

  • Supply Voltage: 2.5V
  • Density: 536871
  • Memory Category: DRAM Chip
  • Number of Words: 32000
DDR DRAM -- NT5DS16M16CS-5T
from Nanya Technology Corporation

16M X 16 DDR DRAM, 0.65 ns, PDSO66 [See More]

  • Supply Voltage: 2.5V
  • Density: 268435
  • Memory Category: DRAM Chip
  • Number of Words: 16000
IC, EEPROM 128BIT SERIAL 400KHZ SOT-23-5 -- 12C1987 [24LC00T/OT from Microchip Technology, Inc.]
from Newark / element14

IC, EEPROM 128BIT SERIAL 400KHZ SOT-23-5; Memory Size:128bit; Memory Configuration:16 x 8; IC Interface Type:I2C; Clock Frequency:400kHz; Supply Voltage Range:2.5V to 5.5V; Memory Case Style:SOT-23; No. of Pins:5 [See More]

  • Supply Voltage: 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V
  • Density: 0
  • Memory Category: EEPROM
  • Package Type: SOT-23
Programmable ROM -- CAT140021ZWI-GT3
from ON Semiconductor L.L.C.

2K X 1 EEPROM 3V, PDSO8 [See More]

  • Supply Voltage: 2.5V
  • Density: 2
  • Memory Category: EEPROM
  • Number of Words: 2
387231 [M24128-BRMN6P from STMicroelectronics, Inc.]
from RS Components, Ltd.

Density:128KBit; Organization:16Kx8; Programming Voltage:2.5, 3.3, 5V; Typical Operating Supply Voltage:2.5, 3.3, 5V; Interface Type:Serial-I2C; Data Retention:40years; Hardware Data Protection:Yes; Supplier Package:SO N; Pin Count:8; Maximum Random Access Time:900ns [See More]

  • Supply Voltage: 2.5V; 3.3V; 5V
  • Density: 128
  • Memory Category: EEPROM
  • Number of Words: 16
CACHE SRAM -- K7A161830B-PC160
from Samsung Semiconductor Division

1M X 18 CACHE SRAM, 3.5 ns, PQFP100 [See More]

  • Supply Voltage: 2.5V
  • Density: 18874
  • Memory Category: SRAM Chip
  • Number of Words: 1000
MICROWIRE BUS SERIAL EEPROM -- S-29394ADP
from Seiko Instruments USA, Inc.

256 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8 [See More]

  • Supply Voltage: 2.5V
  • Density: 4
  • Memory Category: PROM; EEPROM
  • Number of Words: 256
DDR DRAM -- TC59LM806CFT-50
from Toshiba America Electronic Components, Inc.

32M X 8 DDR DRAM, 0.65 ns, PDSO66 [See More]

  • Supply Voltage: 2.5V
  • Density: 268435
  • Memory Category: DRAM Chip
  • Number of Words: 32000
DDR DRAM -- W9412G2IB-6I
from Winbond Electronics Corporation America

4M X 32 DDR DRAM, 0.7 ns, PBGA144 [See More]

  • Supply Voltage: 2.5V
  • Density: 134218
  • Memory Category: DRAM Chip
  • Number of Words: 4000