from Advanced Power Electronics Corp. USA
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP9930AGM-HF-3 is in a standard SO-8 package, which is widely F ull Bridge Applications Simple Drive Requirement Low On-resistance RoHS-compliant ,... [See More]
- Polarity: dual N-Channel
- Package Type: SO-8
- Transistor Type / Technology: MOSFET
from American Microsemiconductor, Inc.
Transistor Arrays: Darlingtons [See More]
- Polarity: 40N
- Package Type: SIP
- Transistor Type / Technology: Darlington
from Avago Technologies
Reduced parasitics version of the AT-415xx family (reduced bond pad to improve performance above 2GHz). The AT-414XX is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. NF=1.6dB, Gain=14.5dB at 8V, 10mA; P1dB= 19dBm at... [See More]
- Polarity: NPN; NPN
- Package Type: 35 Micro-X Package
- Transistor Type / Technology: Bipolar RF
from Universal Semiconductor, Inc.
Self-Aligning Silicon Gate Structure. Dielectrically Isolatied Pair. Low Interelectrode Capacitancees. Input (Gate) Leakage Current. Independant of Operating Point. Gate-Source Voltage Differential as low as 5.0 mV [See More]
- Polarity: N-Channel; Dual N-Channel
- Package Type: TO-99, Sorted Chips in Waffle Pack
- Transistor Type / Technology: MOSFET; Power-MOSFET
- Transistor Grade / Operating Range: Commercial; Industrial
