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AP13P15GH-HF-3TR
from Advanced Power Electronics Corp. USA

The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as high efficiency switching DC/DC converters and DC motor control. The through-hole version (AP13P15GJ) is available for low-profile applications. [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: -150
  • Polarity: P-Channel
  • rDS(on): 0.3000
FET General Purpose Power -- 2SK2094TL [2SK2094TL from ROHM Co., Ltd.]
from Mouser Electronics, Inc.

2 A, 60 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 60
  • Polarity: N-Channel
  • rDS(on): 0.5000
FET General Purpose Power -- 2SJ162 [2SJ162 from Renesas Electronics]
from Perfect Parts Corporation

7 A, 160 V, P-CHANNEL, Si, POWER, MOSFET [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 160
  • Polarity: P-Channel
  • Package Type: TO-3; TO-3P, 3 PIN
FET General Purpose Power -- 2N6764
from Advanced Semiconductor, Inc.

38 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 100
  • Polarity: N-Channel
  • rDS(on): 0.0550
FET General Purpose Power -- VQ1000J
from Calogic, LLC

0.225 A, 60 V, 5.5 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 60
  • Polarity: N-Channel
  • rDS(on): 5.5
FET RF Power -- PTE10041
from Ericsson, Inc.

L BAND, Si, N-CHANNEL, RF POWER, MOSFET [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 65
  • Polarity: N-Channel
  • Number of units in IC: 1
FET General Purpose Power -- BSB012N03LX3G
from Infineon Technologies AG

39 A, 30 V, 0.0012 ohm, N-CHANNEL, Si, POWER, MOSFET [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 30
  • Polarity: N-Channel
  • rDS(on): 0.0012
FET General Purpose Power -- 2N6758
from International Rectifier

9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 200
  • Polarity: N-Channel
  • rDS(on): 0.4000
FET General Purpose Power -- SI2301
from Micro Commercial Components Corp.

2.8 A, 20 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 20
  • Polarity: P-Channel
  • rDS(on): 0.1200
FET General Purpose Power -- 2N6756
from Microsemi Corp.

14 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 100
  • Polarity: N-Channel
  • rDS(on): 0.2100
FET General Purpose Power -- ME12N06EL-F
from Nihon Inter Electronics Corporation

12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 60
  • Polarity: N-Channel
  • rDS(on): 0.1800
FET General Purpose Power -- FS16SM-10
from Powerex, Inc. - PA

16 A, 500 V, 0.56 ohm, N-CHANNEL, Si, POWER, MOSFET [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 500
  • Polarity: N-Channel
  • rDS(on): 0.5600
FET General Purpose Power -- JANTX2N6788
from Rochester Electronics, Inc.

6 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 100
  • Polarity: N-Channel
  • rDS(on): 0.3000
300701 [IRF9952PBF from International Rectifier]
from RS Components, Ltd.

Channel Type:N,P; Maximum Drain Source Voltage:30V; Supplier Package:SOIC; Configuration:Dual; Dual Drain; Maximum Gate Source Voltage:20V; Category:Power MOSFET; Product Length:4.98mm; Minimum Operating Temperature:-55C; Product Height:1.5mm; Channel Mode:Enhancement [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 30
  • Polarity: Complementary
  • TJ: -55 to ?
FET General Purpose Power -- IRF541
from Samsung Semiconductor Division

28 A, 80 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 80
  • Polarity: N-Channel
  • rDS(on): 0.0770
FET General Purpose Power -- 2SJ583LS
from SANYO Electric Co., Ltd.

3.5 A, 250 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 250
  • Polarity: P-Channel
  • rDS(on): 1.5
FET General Purpose Power -- 2N6660X-QR-EB
from Semelab Plc.

1.1 A, 60 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 60
  • Polarity: N-Channel
  • rDS(on): 3
MOSFET SEMITRANS -- SKM 111 AR
from Semikron, Inc.

100V / 200V. 130A - 200A. single switch [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 100
  • Polarity: N-Channel
  • rDS(on): 0.0085
FET General Purpose Power -- 2N7228
from Sensitron Semiconductor

12 A, 500 V, 0.415 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 500
  • Polarity: N-Channel
  • rDS(on): 0.4150
FET General Purpose Power -- 2SJ370
from Shindengen Electric Manufacturing Co., Ltd.

10 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 60
  • Polarity: P-Channel
  • rDS(on): 0.1600
FET General Purpose Power -- SFF054
from Solid State Devices, Inc.

45 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 60
  • Polarity: N-Channel
  • rDS(on): 0.0220
FET General Purpose Power -- 2N6661
from Solitron Devices, Inc.

90 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 90
  • Polarity: N-Channel
  • rDS(on): 4
FET General Purpose Power -- RBVQ1000N7
from Supertex, Inc.

0.225 A, 60 V, 5.5 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 60
  • Polarity: N-Channel
  • rDS(on): 5.5
FET General Purpose Power -- 2SJ200-Y
from Toshiba America Electronic Components, Inc.

10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 180
  • Polarity: P-Channel
  • Package Type: 2-16C1B, 3 PIN
FET General Purpose Power -- JANTX2N6764
from TT Electronics/IRC

38 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 100
  • Polarity: N-Channel
  • rDS(on): 0.0550
SD1107DD
from Universal Semiconductor, Inc.

Gate Standoff Voltage. Available in a wide variety of packages. Low capacitance. Low ON resistance. P-Channel Complement Available [See More]

  • Operating Mode: Enhancement
  • Type: DMOSFET
  • Polarity: N-Channel; P-Channel (optional feature); Complementary (optional feature)
  • V(BR)DSS: 130
FET General Purpose Power -- C-IXFD40N30
from Zilog

300 V, 0.088 ohm, N-CHANNEL, Si, POWER, MOSFET [See More]

  • Operating Mode: Enhancement
  • V(BR)DSS: 300
  • Polarity: N-Channel
  • rDS(on): 0.0880