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SiC Power Module -- BSM120D12P2C005
from ROHM Semiconductor USA, LLC

Half bridge module consisting of ROHM SiC-DMOSFETs and SiC-SBDs.Application Note for SiC Power Devices is here [See More]

  • Packing Method: Tray
  • IDSS: 120000
  • V(BR)DSS: 1200
  • PD: 780000
SD210
from Universal Semiconductor, Inc.

Self-Aligning Silicon Gate Sturcture. Low Transfer Capacitance - 0.2 pF typ. Low Input Capacitance - 2.4 pF typ. Low Output Capacitance - 1.3 pF typ. Low Gate Threadhold Voltage - 0.6V typ. [See More]

  • Packing Method: Tray
  • Operating Mode: Enhancement
  • Polarity: N-Channel
  • Type: LDMOSFET