Low-On Resistance Low Switching Noise and Low Switching Loss Super J-MOS Series Power MOSFET -- FMH20N60S1
from Fuji Electric Corp. of America

Low on-state resistance: 75% RonA compared to conventional planar MOSFET. Low switching loss, low noise: Best performance for Eoff-dv/dt trade-off in the market. Easy to use: VGS(th) +/-0.5V guarantee, Avalanche robustness [See More]

  • Type: J-MOS
  • V(BR)DSS: 600
  • Polarity: N-Channel
  • rDS(on): 0.1900
from Texas Instruments High-Performance Analog

Ultralow Qg and Qgd. Low Thermal Resistance. Pb Free Terminal Plating. RoHS Compliant. Halogen Free. SON 2-mm × 2-mm Plastic Package. APPLICATIONS. DC-DC Converters. Battery and Load Management Applications [See More]

  • Type: NexFET™
  • V(BR)DSS: 25
  • Polarity: N-Channel
  • rDS(on): 0.0230