CREE - CMF10120D - N CH, SILICON CARBIDE (SiC) POWER MOSFET, 1200V, 24A, TO-247-3 -- 891282 [CMF10120D from Cree, Inc.]
from 1-Source Electronic Components

N CH, SILICON CARBIDE (SiC) POWER MOSFET, 1200V, 24A, TO-247-3. Transistor Polarity:N Channel. Continuous Drain Current Id:24A. Drain Source Voltage Vds:1.2kV. On Resistance Rds(on):0.16ohm. Rds(on) Test Voltage Vgs:20V [See More]

  • Polarity: N-Channel
  • rDS(on): 0.1600
  • V(BR)DSS: 1200
  • IDSS: 24000
AP2312GN-HF-3TR
from Advanced Power Electronics Corp. USA

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-23 package is universally used for all commercial-industrial applications. [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 20
  • Operating Mode: Enhancement
  • rDS(on): 0.0750
Automotive Intelligent Power MOSFET -- F5018
from Fuji Electric Corp. of America

Fuji Electric offers a high performance and easy-to-use, easy-to-design planer type power MOSFET achieved by the 2nd generation “Quasi-Plane-Junction ” technology. It maintains both low power loss and noise, lower RDS(on) characteristics, more controllable switching dv/dt by gate... [See More]

  • Polarity: N-Channel
  • rDS(on): 0.1400
  • V(BR)DSS: 40
  • IDSS: 8000
FET General Purpose Power -- 2SK2094TL [2SK2094TL from ROHM Co., Ltd.]
from Mouser Electronics, Inc.

2 A, 60 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 60
  • Operating Mode: Enhancement
  • rDS(on): 0.5000
CSD16301Q2
from Texas Instruments High-Performance Analog

Ultralow Qg and Qgd. Low Thermal Resistance. Pb Free Terminal Plating. RoHS Compliant. Halogen Free. SON 2-mm × 2-mm Plastic Package. APPLICATIONS. DC-DC Converters. Battery and Load Management Applications [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 25
  • Type: NexFET™
  • rDS(on): 0.0230
FET General Purpose Power -- 2N6764
from Advanced Semiconductor, Inc.

38 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 100
  • Operating Mode: Enhancement
  • rDS(on): 0.0550
20V DUAL N-CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE -- 70016974 [IRF7101PBF from International Rectifier]
from Allied Electronics, Inc.

20V DUAL N-CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE [See More]

  • Polarity: N-Channel
  • rDS(on): 0.1000
  • V(BR)DSS: 20
  • PD: 2000
FET General Purpose Power -- VQ1000J
from Calogic, LLC

0.225 A, 60 V, 5.5 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 60
  • Operating Mode: Enhancement
  • rDS(on): 5.5
FET RF Power -- PTE10041
from Ericsson, Inc.

L BAND, Si, N-CHANNEL, RF POWER, MOSFET [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 65
  • Operating Mode: Enhancement
  • Number of units in IC: 1
FET General Purpose Power -- BSB012N03LX3G
from Infineon Technologies AG

39 A, 30 V, 0.0012 ohm, N-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 30
  • Operating Mode: Enhancement
  • rDS(on): 0.0012
FET General Purpose Power -- 2N6758
from International Rectifier

9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 200
  • Operating Mode: Enhancement
  • rDS(on): 0.4000
FET General Purpose Power -- 2N6756
from Microsemi Corp.

14 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 100
  • Operating Mode: Enhancement
  • rDS(on): 0.2100
FET General Purpose Power -- ME12N06EL-F
from Nihon Inter Electronics Corporation

12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 60
  • Operating Mode: Enhancement
  • rDS(on): 0.1800
FET General Purpose Power -- FS16SM-10
from Powerex, Inc. - PA

16 A, 500 V, 0.56 ohm, N-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 500
  • Operating Mode: Enhancement
  • rDS(on): 0.5600
FET General Purpose Power -- JANTX2N6788
from Rochester Electronics, Inc.

6 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 100
  • Operating Mode: Enhancement
  • rDS(on): 0.3000
1267721
from RS Components, Ltd.

Channel Type:N; Maximum Continuous Drain Current:38A; Maximum Drain Source Voltage:100V; Supplier Package:TO-3; Maximum Drain Source Resistance:0.065Ohms; Maximum Power Dissipation:150W; Configuration:Single; Mounting:Through Hole; Category:Power MOSFET [See More]

  • Polarity: N-Channel
  • rDS(on): 0.0650
  • V(BR)DSS: 100
  • IDSS: 38000
FET General Purpose Power -- IRF541
from Samsung Semiconductor Division

28 A, 80 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 80
  • Operating Mode: Enhancement
  • rDS(on): 0.0770
FET General Purpose Power -- 2SK1412
from SANYO Electric Co., Ltd.

0.1 A, 1500 V, 200 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FI [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 1500
  • Operating Mode: Enhancement
  • rDS(on): 200
FET General Purpose Power -- 2N6660X-QR-EB
from Semelab Plc.

1.1 A, 60 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 60
  • Operating Mode: Enhancement
  • rDS(on): 3
MOSFET SEMITRANS -- SKM 111 AR
from Semikron, Inc.

100V / 200V. 130A - 200A. single switch [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 100
  • Operating Mode: Enhancement
  • rDS(on): 0.0085
FET General Purpose Power -- 2N7228
from Sensitron Semiconductor

12 A, 500 V, 0.415 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 500
  • Operating Mode: Enhancement
  • rDS(on): 0.4150
FET General Purpose Power -- 2SK1931-4061
from Shindengen Electric Manufacturing Co., Ltd.

5 A, 200 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 200
  • Operating Mode: Enhancement
  • rDS(on): 0.6500
FET General Purpose Power -- SFF054
from Solid State Devices, Inc.

45 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 60
  • Operating Mode: Enhancement
  • rDS(on): 0.0220
FET General Purpose Power -- 2N6661
from Solitron Devices, Inc.

90 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 90
  • Operating Mode: Enhancement
  • rDS(on): 4
FET General Purpose Power -- DN2470K4
from Supertex, Inc.

0.17 A, 700 V, 42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 700
  • Operating Mode: Depletion
  • rDS(on): 42
FET General Purpose Power -- 2SJ610
from Toshiba America Electronic Components, Inc.

2 A, 250 V, 2.55 ohm, N-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 250
  • Operating Mode: Enhancement
  • rDS(on): 2.55
FET General Purpose Power -- JANTX2N6764
from TT Electronics/IRC

38 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 100
  • Operating Mode: Enhancement
  • rDS(on): 0.0550
SD1107DD
from Universal Semiconductor, Inc.

Gate Standoff Voltage. Available in a wide variety of packages. Low capacitance. Low ON resistance. P-Channel Complement Available [See More]

  • Polarity: N-Channel; P-Channel (optional feature); Complementary (optional feature)
  • Type: DMOSFET
  • Operating Mode: Enhancement
  • V(BR)DSS: 130
FET General Purpose Power -- C-IXFD40N30
from Zilog

300 V, 0.088 ohm, N-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 300
  • Operating Mode: Enhancement
  • rDS(on): 0.0880