N-Channel Power MOSFET Datasheets

100V-300V N-Channel Automotive MOSFET -- AUIRF3710ZS
from Infineon Technologies AG

100V-300V N-Channel Automotive MOSFET [See More]

  • Polarity: N-Channel
  • Package Type: TO-263; D2PAK (TO-263)
  • QG: 82
250V Single N-Channel HEXFET Power MOSFET in a D-P -- IRFR12N25DPBF [IRFR12N25DPBF from International Rectifier]
from Karl Kruse GmbH & Co. KG

Karl Kruse  is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop... [See More]

  • Polarity: N-Channel
100V Nch+Nch Middle Power MOSFET -- SP8K52FRA
from ROHM Semiconductor USA, LLC

SP8K52FRA is the high reliability Automotive transistor, suitable for switching applications and motor drive. [See More]

  • Polarity: N-Channel
  • IDSS: 3000
  • V(BR)DSS: 100
  • QG: 8.5
Half-Bridge, N-Channel MOSFET, Hi-Rel POWER HYBRID -- SPH12100FP
from Solid State Devices, Inc.

Features: Rugged poly-Si gate. Lowest ON-resistance in the Industry. Avalanche rated. Hermetically Sealed, Isolated Package. Low Total Gate Charge. Fast Switching. Improved (RDS(ON) QG) Figure of Merit. Class H, K Screening Available. Consult Factory for Special Requirements such as Builtin Zener... [See More]

  • Polarity: N-Channel
  • rDS(on): 318 to 340
  • V(BR)DSS: 1000
  • IDSS: 7.5 to 12
CSD13201W10 N-Channel NexFET? Power MOSFET -- CSD13201W10
from Texas Instruments

N-Channel NexFET? Power MOSFET 4-DSBGA -55 to 150 [See More]

  • Polarity: N-Channel
  • rDS(on): 0.0340
  • V(BR)DSS: 12
  • IDSS: 20200
FET General Purpose Power -- 2N6764
from Advanced Semiconductor, Inc.

38 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 100
  • Operating Mode: Enhancement
  • rDS(on): 0.0550
20V DUAL N-CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE -- 70016974 [IRF7101PBF from International Rectifier]
from Allied Electronics, Inc.

20V DUAL N-CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE [See More]

  • Polarity: N-Channel
  • rDS(on): 0.1000
  • V(BR)DSS: 20
  • PD: 2000
FET General Purpose Power -- VQ1000J
from Calogic, LLC

0.225 A, 60 V, 5.5 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 60
  • Operating Mode: Enhancement
  • rDS(on): 5.5
Automotive Intelligent Power MOSFET -- F5018
from Fuji Electric Corp. of America

Fuji Electric offers a high performance and easy-to-use, easy-to-design planer type power MOSFET achieved by the 2nd generation “Quasi-Plane-Junction ” technology. It maintains both low power loss and noise, lower RDS(on) characteristics, more controllable switching dv/dt by gate... [See More]

  • Polarity: N-Channel
  • rDS(on): 0.1400
  • V(BR)DSS: 40
  • IDSS: 8000
FET General Purpose Power -- ME12N06EL-F
from Nihon Inter Electronics Corporation

12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 60
  • Operating Mode: Enhancement
  • rDS(on): 0.1800
FET General Purpose Power -- FS16SM-10
from Powerex, Inc.

16 A, 500 V, 0.56 ohm, N-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 500
  • Operating Mode: Enhancement
  • rDS(on): 0.5600
FET General Purpose Power -- JANTX2N6788
from Rochester Electronics

6 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 100
  • Operating Mode: Enhancement
  • rDS(on): 0.3000
FET General Purpose Power -- IRF541
from Samsung Semiconductor Division

28 A, 80 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 80
  • Operating Mode: Enhancement
  • rDS(on): 0.0770
FET General Purpose Power -- 2SK1412
from SANYO Electric Co., Ltd.

0.1 A, 1500 V, 200 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FI [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 1500
  • Operating Mode: Enhancement
  • rDS(on): 200
FET General Purpose Power -- 2N6660X-QR-EB
from Semelab Plc.

1.1 A, 60 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 60
  • Operating Mode: Enhancement
  • rDS(on): 3
FET General Purpose Power -- 2N7228
from Sensitron Semiconductor

12 A, 500 V, 0.415 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 500
  • Operating Mode: Enhancement
  • rDS(on): 0.4150
FET General Purpose Power -- 2SK1931-4061
from Shindengen Electric Manufacturing Co., Ltd.

5 A, 200 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 200
  • Operating Mode: Enhancement
  • rDS(on): 0.6500
FET General Purpose Power -- 2N6661
from Solitron Devices, Inc.

90 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 90
  • Operating Mode: Enhancement
  • rDS(on): 4
FET General Purpose Power -- JANTX2N6764
from TT Electronics/IRC

38 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 100
  • Operating Mode: Enhancement
  • rDS(on): 0.0550
SD1107DD
from Universal Semiconductor, Inc.

Gate Standoff Voltage. Available in a wide variety of packages. Low capacitance. Low ON resistance. P-Channel Complement Available [See More]

  • Polarity: N-Channel; P-Channel (optional feature); Complementary (optional feature)
  • Type: DMOSFET
  • Operating Mode: Enhancement
  • V(BR)DSS: 130