N-Channel Power MOSFET Datasheets

Power MOSFETs -- AP0103GMT
from Advanced Power Electronics Corp.

Power MOSFETs [See More]

  • Polarity: N-Channel
  • rDS(on): 0.0026 to 0.0036
  • V(BR)DSS: 40
  • IDSS: 34600
Automotive Intelligent Power MOSFET -- F5018
from Fuji Electric Corp. of America

Fuji Electric offers a high performance and easy-to-use, easy-to-design planer type power MOSFET achieved by the 2nd generation “Quasi-Plane-Junction ” technology. It maintains both low power loss and noise, lower RDS(on) characteristics, more controllable switching dv/dt by gate... [See More]

  • Polarity: N-Channel
  • rDS(on): 0.1400
  • V(BR)DSS: 40
  • IDSS: 8000
Dual: N-Channel 100V MOSFET -- IPG16N10S4-61
from Infineon Technologies AG

Summary of Features: Dual N-channel Normal Level - Enhancement mode. AEC Q101 qualified. MSL1 up to 260 °C peak reflow. 175 °C operating temperature. Green Product (RoHS compliant). 100% Avalanche tested. Benefits: Dual Super S08 can replace multiple DPAKs for significant PCB area savings... [See More]

  • Polarity: N-Channel
  • IDSS: 16000
  • rDS(on): 0.0610
  • QG: 5.4
FET General Purpose Power -- 2SK2094TL [2SK2094TL from ROHM Co., Ltd.]
from Mouser Electronics, Inc.

2 A, 60 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 60
  • Operating Mode: Enhancement
  • rDS(on): 0.5000
FET General Purpose Power -- JANTX2N6788
from Rochester Electronics, Inc.

6 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 100
  • Operating Mode: Enhancement
  • rDS(on): 0.3000
10V Drive Nch Power MOSFET -- RCD041N25
from ROHM Semiconductor USA, LLC

Transistor [See More]

  • Polarity: N-Channel
  • IDSS: 4000
  • V(BR)DSS: 250
  • QG: 9
CSD13201W10 N-Channel NexFET? Power MOSFET -- CSD13201W10
from Texas Instruments

N-Channel NexFET? Power MOSFET 4-DSBGA -55 to 150 [See More]

  • Polarity: N-Channel
  • rDS(on): 0.0340
  • V(BR)DSS: 12
  • IDSS: 20200
FET General Purpose Power -- 2N6764
from Advanced Semiconductor, Inc.

38 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 100
  • Operating Mode: Enhancement
  • rDS(on): 0.0550
20V DUAL N-CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE -- 70016974 [IRF7101PBF from International Rectifier]
from Allied Electronics, Inc.

20V DUAL N-CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE [See More]

  • Polarity: N-Channel
  • rDS(on): 0.1000
  • V(BR)DSS: 20
  • PD: 2000
FET General Purpose Power -- VQ1000J
from Calogic, LLC

0.225 A, 60 V, 5.5 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 60
  • Operating Mode: Enhancement
  • rDS(on): 5.5
N-Channel Enhancement Mode -- CMF10120D
from Cree, Inc.

MOSFET ZFET 1X10A IDS 1200V ON 160MOHM SIC MOSFT [See More]

  • Polarity: N-Channel
  • Type: Z-FET™ MOSFET
  • Operating Mode: Enhancement
  • V(BR)DSS: 1200
FET RF Power -- PTE10041
from Ericsson, Inc.

L BAND, Si, N-CHANNEL, RF POWER, MOSFET [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 65
  • Operating Mode: Enhancement
  • Number of units in IC: 1
FET General Purpose Power -- 2N6758
from International Rectifier

9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 200
  • Operating Mode: Enhancement
  • rDS(on): 0.4000
FET General Purpose Power -- 2N6756
from Microsemi Corp.

14 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 100
  • Operating Mode: Enhancement
  • rDS(on): 0.2100
FET General Purpose Power -- ME12N06EL-F
from Nihon Inter Electronics Corporation

12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 60
  • Operating Mode: Enhancement
  • rDS(on): 0.1800
FET General Purpose Power -- FS16SM-10
from Powerex, Inc. - PA

16 A, 500 V, 0.56 ohm, N-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 500
  • Operating Mode: Enhancement
  • rDS(on): 0.5600
1267721
from RS Components, Ltd.

Channel Type:N; Maximum Continuous Drain Current:38A; Maximum Drain Source Voltage:100V; Supplier Package:TO-3; Maximum Drain Source Resistance:0.065Ohms; Maximum Power Dissipation:150W; Configuration:Single; Mounting:Through Hole; Category:Power MOSFET [See More]

  • Polarity: N-Channel
  • rDS(on): 0.0650
  • V(BR)DSS: 100
  • IDSS: 38000
FET General Purpose Power -- IRF541
from Samsung Semiconductor Division

28 A, 80 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 80
  • Operating Mode: Enhancement
  • rDS(on): 0.0770
FET General Purpose Power -- 2SK1412
from SANYO Electric Co., Ltd.

0.1 A, 1500 V, 200 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FI [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 1500
  • Operating Mode: Enhancement
  • rDS(on): 200
FET General Purpose Power -- 2N6660X-QR-EB
from Semelab Plc.

1.1 A, 60 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 60
  • Operating Mode: Enhancement
  • rDS(on): 3
MOSFET SEMITRANS -- SKM 111 AR
from Semikron, Inc.

100V / 200V. 130A - 200A. single switch [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 100
  • Operating Mode: Enhancement
  • rDS(on): 0.0085
FET General Purpose Power -- 2N7228
from Sensitron Semiconductor

12 A, 500 V, 0.415 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 500
  • Operating Mode: Enhancement
  • rDS(on): 0.4150
FET General Purpose Power -- 2SK1931-4061
from Shindengen Electric Manufacturing Co., Ltd.

5 A, 200 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 200
  • Operating Mode: Enhancement
  • rDS(on): 0.6500
FET General Purpose Power -- SFF054
from Solid State Devices, Inc.

45 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 60
  • Operating Mode: Enhancement
  • rDS(on): 0.0220
FET General Purpose Power -- 2N6661
from Solitron Devices, Inc.

90 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 90
  • Operating Mode: Enhancement
  • rDS(on): 4
FET General Purpose Power -- DN2470K4
from Supertex, Inc.

0.17 A, 700 V, 42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 700
  • Operating Mode: Depletion
  • rDS(on): 42
FET General Purpose Power -- 2SJ610
from Toshiba America Electronic Components, Inc.

2 A, 250 V, 2.55 ohm, N-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 250
  • Operating Mode: Enhancement
  • rDS(on): 2.55
FET General Purpose Power -- JANTX2N6764
from TT Electronics/IRC

38 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 100
  • Operating Mode: Enhancement
  • rDS(on): 0.0550
SD1107DD
from Universal Semiconductor, Inc.

Gate Standoff Voltage. Available in a wide variety of packages. Low capacitance. Low ON resistance. P-Channel Complement Available [See More]

  • Polarity: N-Channel; P-Channel (optional feature); Complementary (optional feature)
  • Type: DMOSFET
  • Operating Mode: Enhancement
  • V(BR)DSS: 130
FET General Purpose Power -- C-IXFD40N30
from Zilog

300 V, 0.088 ohm, N-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: N-Channel
  • V(BR)DSS: 300
  • Operating Mode: Enhancement
  • rDS(on): 0.0880