INTERNATIONAL RECTIFIER - IRF7220GTRPBF - P CH POWER MOSFET, HEXFET, -14V, -11A, SOIC-8 -- 376224 [IRF7220GTRPBF from International Rectifier]
from 1-Source Electronic Components

P CH POWER MOSFET, HEXFET, -14V, -11A, SOIC-8. Transistor Polarity:P Channel. Continuous Drain Current Id:-11A. Drain Source Voltage Vds:-14V. On Resistance Rds(on):8.2mohm. Rds(on) Test Voltage Vgs:-4.5V. RoHS Compliant: Yes [See More]

  • Polarity: P-Channel
  • rDS(on): 0.0082
  • V(BR)DSS: -14
  • IDSS: -11000
AP1333GU-HF-3TR
from Advanced Power Electronics Corp. USA

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. [See More]

  • Polarity: P-Channel
  • V(BR)DSS: -20
  • Operating Mode: Enhancement
  • rDS(on): 1
Avalanche Rated FAP-III Series (P Channel) Power MOSFET -- 2SJ314-01L,S
from Fuji Electric Corp. of America

Fuji Electric offers a high performance and easy-to-use, easy-to-design planer type power MOSFET achieved by the 2nd generation “Quasi-Plane-Junction ” technology. It maintains both low power loss and noise, lower RDS(on) characteristics, more controllable switching dv/dt by gate... [See More]

  • Polarity: P-Channel
  • rDS(on): 0.3000
  • V(BR)DSS: -60
  • IDSS: -5000
FET General Purpose Power -- AUIRF4905 [AUIRF4905 from International Rectifier]
from Mouser Electronics, Inc.

74 A, 55 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB [See More]

  • Polarity: P-Channel
  • V(BR)DSS: 55
  • Operating Mode: Enhancement
  • rDS(on): 0.0200
FET General Purpose Power -- 2SJ162 [2SJ162 from Renesas Electronics]
from Perfect Parts Corporation

7 A, 160 V, P-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: P-Channel
  • V(BR)DSS: 160
  • Operating Mode: Enhancement
  • Package Type: TO-3; TO-3P, 3 PIN
4V-drive type Pch+Pch Power MOSFET -- SH8J62
from ROHM Semiconductor USA, LLC

Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

  • Polarity: P-Channel
  • IDSS: -4500
  • V(BR)DSS: -30
  • QG: 8
CSD25302Q2
from Texas Instruments High-Performance Analog

Ultralow Qg and Qgd. Low Thermal Resistance. Avalanche Rated. Pb Free Terminal Plating. RoHS Compliant. Halogen Free. SON 2-mm × 2-mm Plastic Package. APPLICATIONS. Battery Management. Load Management. Battery Protection [See More]

  • Polarity: P-Channel
  • V(BR)DSS: -20
  • Type: NexFET™
  • rDS(on): 0.0390
-20V DUAL P-CHANNEL HEXFET POWER MOSFETIN A MICRO 8 PACKAGE -- 70017198 [IRF7555TRPBF from International Rectifier]
from Allied Electronics, Inc.

-20V DUAL P-CHANNEL HEXFET POWER MOSFETIN A MICRO 8 PACKAGE [See More]

  • Polarity: P-Channel
  • PD: 1200
  • rDS(on): 0.0550
  • Package Type: MICRO-8
FET General Purpose Power -- BSC030P03NS3G
from Infineon Technologies AG

25.4 A, 30 V, 0.0046 ohm, P-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: P-Channel
  • V(BR)DSS: 30
  • Operating Mode: Enhancement
  • rDS(on): 0.0046
FET General Purpose Power -- 2N6804
from International Rectifier

11 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA [See More]

  • Polarity: P-Channel
  • V(BR)DSS: 100
  • Operating Mode: Enhancement
  • rDS(on): 0.3000
FET General Purpose Power -- SI2301
from Micro Commercial Components Corp.

2.8 A, 20 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: P-Channel
  • V(BR)DSS: 20
  • Operating Mode: Enhancement
  • rDS(on): 0.1200
FET General Purpose Power -- 2N6804
from Microsemi Corp.

11 A, 100 V, 0.36 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA [See More]

  • Polarity: P-Channel
  • V(BR)DSS: 100
  • Operating Mode: Enhancement
  • rDS(on): 0.3600
1890668
from RS Components, Ltd.

Channel Type:P; Maximum Continuous Drain Current:4A; Maximum Drain Source Voltage:100V; Supplier Package:TO-205; Maximum Drain Source Resistance:0.69Ohms; Maximum Power Dissipation:20W; Configuration:Single; Category:Power MOSFET; Mounting:Through Hole [See More]

  • Polarity: P-Channel
  • rDS(on): 0.6900
  • V(BR)DSS: 100
  • IDSS: 4000
FET General Purpose Power -- IRF9541
from Samsung Semiconductor Division

19 A, 60 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220 [See More]

  • Polarity: P-Channel
  • V(BR)DSS: 60
  • Operating Mode: Enhancement
  • rDS(on): 0.2000
FET General Purpose Power -- 2SJ583LS
from SANYO Electric Co., Ltd.

3.5 A, 250 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: P-Channel
  • V(BR)DSS: 250
  • Operating Mode: Enhancement
  • rDS(on): 1.5
FET General Purpose Power -- 2N6845
from Semelab Plc.

4 A, 100 V, 0.69 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF [See More]

  • Polarity: P-Channel
  • V(BR)DSS: 100
  • Operating Mode: Enhancement
  • rDS(on): 0.6900
FET General Purpose Power -- 2N7336
from Sensitron Semiconductor

1 A, 100 V, 0.7 ohm, N AND P-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: N-Channel; P-Channel
  • V(BR)DSS: 100
  • Operating Mode: Enhancement
  • rDS(on): 0.7000
FET General Purpose Power -- 2SJ370
from Shindengen Electric Manufacturing Co., Ltd.

10 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: P-Channel
  • V(BR)DSS: 60
  • Operating Mode: Enhancement
  • rDS(on): 0.1600
FET General Purpose Power -- SFF9140J
from Solid State Devices, Inc.

18 A, 100 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257 [See More]

  • Polarity: P-Channel
  • V(BR)DSS: 100
  • Operating Mode: Enhancement
  • rDS(on): 0.2300
FET General Purpose Power -- SDF9140JDAXGD1N
from Solitron Devices, Inc.

19 A, 100 V, 0.21 ohm, P-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: P-Channel
  • V(BR)DSS: 100
  • Operating Mode: Enhancement
  • rDS(on): 0.2100
FET General Purpose Power -- RBVQ2006P
from Supertex, Inc.

0.41 A, 90 V, 5 ohm, 4 CHANNEL, P-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: P-Channel
  • V(BR)DSS: 90
  • Operating Mode: Enhancement
  • rDS(on): 5
FET General Purpose Power -- 2SJ200-Y
from Toshiba America Electronic Components, Inc.

10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: P-Channel
  • V(BR)DSS: 180
  • Operating Mode: Enhancement
  • Package Type: 2-16C1B, 3 PIN
SD1107BD
from Universal Semiconductor, Inc.

Apps include high speed pulse amplifiers & line drivers [See More]

  • Polarity: N-Channel; P-Channel (optional feature); Complementary (optional feature)
  • Type: DMOSFET
  • Operating Mode: Enhancement
  • V(BR)DSS: 130
FET General Purpose Power -- IXTA10P50P
from Zilog

10 A, 500 V, 1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB [See More]

  • Polarity: P-Channel
  • V(BR)DSS: 500
  • Operating Mode: Enhancement
  • rDS(on): 1