from Advanced Power Electronics Corp. USA
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. [See More]
- Polarity: P-Channel
- V(BR)DSS: -20
- Operating Mode: Enhancement
- rDS(on): 1
from Allied Electronics, Inc.
-20V DUAL P-CHANNEL HEXFET POWER MOSFETIN A MICRO 8 PACKAGE [See More]
- Polarity: P-Channel
- PD: 1200
- rDS(on): 0.0550
- Package Type: MICRO-8
from Fuji Electric Corp. of America
Fuji Electric offers a high performance and easy-to-use, easy-to-design planer type power MOSFET achieved by the 2nd generation “Quasi-Plane-Junction ” technology. It maintains both low power loss and noise, lower RDS(on) characteristics, more controllable switching dv/dt by gate... [See More]
- Polarity: P-Channel
- rDS(on): 0.3000
- V(BR)DSS: -60
- IDSS: -5000
from ROHM Semiconductor, USA LLC
High speed switching, low on-resistance [See More]
- Polarity: P-Channel
- rDS(on): 78
- V(BR)DSS: 30
- PD: 2000
from Texas Instruments High-Performance Analog
Ultralow Qg and Qgd. Low Thermal Resistance. Avalanche Rated. Pb Free Terminal Plating. RoHS Compliant. Halogen Free. SON 2-mm × 2-mm Plastic Package. APPLICATIONS. Battery Management. Load Management. Battery Protection [See More]
- Polarity: P-Channel
- V(BR)DSS: -20
- Type: NexFET™
- rDS(on): 0.0390
from Infineon Technologies Corporation
25.4 A, 30 V, 0.0046 ohm, P-CHANNEL, Si, POWER, MOSFET [See More]
- Polarity: P-Channel
- V(BR)DSS: 30
- Operating Mode: Enhancement
- rDS(on): 0.0046
from International Rectifier
2.5 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF [See More]
- Polarity: P-Channel
- V(BR)DSS: 100
- Operating Mode: Enhancement
- rDS(on): 1.2
from IXYS Corporation
10 A, 500 V, 1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB [See More]
- Polarity: P-Channel
- V(BR)DSS: 500
- Operating Mode: Enhancement
- rDS(on): 1
from Micro Commercial Components Corp.
2.8 A, 20 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET [See More]
- Polarity: P-Channel
- V(BR)DSS: 20
- Operating Mode: Enhancement
- rDS(on): 0.1200
from Microsemi Corp.
11 A, 100 V, 0.36 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA [See More]
- Polarity: P-Channel
- V(BR)DSS: 100
- Operating Mode: Enhancement
- rDS(on): 0.3600
from Semelab Plc.
4 A, 100 V, 0.69 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF [See More]
- Polarity: P-Channel
- V(BR)DSS: 100
- Operating Mode: Enhancement
- rDS(on): 0.6900
from Sensitron Semiconductor
1 A, 100 V, 0.7 ohm, N AND P-CHANNEL, Si, POWER, MOSFET [See More]
- Polarity: N-Channel; P-Channel
- V(BR)DSS: 100
- Operating Mode: Enhancement
- rDS(on): 0.7000
from Solid State Devices, Inc.
18 A, 100 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257 [See More]
- Polarity: P-Channel
- V(BR)DSS: 100
- Operating Mode: Enhancement
- rDS(on): 0.2300
from Solitron Devices, Inc.
19 A, 100 V, 0.21 ohm, P-CHANNEL, Si, POWER, MOSFET [See More]
- Polarity: P-Channel
- V(BR)DSS: 100
- Operating Mode: Enhancement
- rDS(on): 0.2100
from Supertex, Inc.
350 A, 500 V, 60 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET [See More]
- Polarity: N-Channel; P-Channel
- V(BR)DSS: 500
- Operating Mode: Enhancement
- rDS(on): 60
from Toshiba America Electronic Components, Inc.
5 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET [See More]
- Polarity: P-Channel
- V(BR)DSS: 60
- Operating Mode: Enhancement
- rDS(on): 0.2800
from Universal Semiconductor, Inc.
Apps include high speed pulse amplifiers & line drivers [See More]
- Polarity: N-Channel; P-Channel (optional feature); Complementary (optional feature)
- Type: DMOSFET
- Operating Mode: Enhancement
- V(BR)DSS: 130
