P-Channel Power MOSFET Datasheets

Avalanche Rated FAP-III Series (P Channel) Power MOSFET -- 2SJ314-01L,S
from Fuji Electric Corp. of America

Fuji Electric offers a high performance and easy-to-use, easy-to-design planer type power MOSFET achieved by the 2nd generation “Quasi-Plane-Junction ” technology. It maintains both low power loss and noise, lower RDS(on) characteristics, more controllable switching dv/dt by gate... [See More]

  • Polarity: P-Channel
  • rDS(on): 0.3000
  • V(BR)DSS: -60
  • IDSS: -5000
P-Channel 20V-250V -- BSC030P03NS3 G
from Infineon Technologies AG

Infineon ’s highly innovative OptiMOS ™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and Figure of Merit characteristics. Summary of... [See More]

  • Polarity: P-Channel
  • IDSS: 100000
  • rDS(on): 0.0030
  • QG: 137
FET General Purpose Power -- AUIRF4905 [AUIRF4905 from International Rectifier]
from Mouser Electronics, Inc.

74 A, 55 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB [See More]

  • Polarity: P-Channel
  • V(BR)DSS: 55
  • Operating Mode: Enhancement
  • rDS(on): 0.0200
FET General Purpose Power -- 2SJ162 [2SJ162 from Renesas Electronics]
from Perfect Parts Corporation

7 A, 160 V, P-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: P-Channel
  • V(BR)DSS: 160
  • Operating Mode: Enhancement
  • Package Type: TO-3; TO-3P, 3 PIN
-12V Pch+Pch Middle Power MOSFET -- QS8J13
from ROHM Semiconductor USA, LLC

The Power MOSFET QS8J13 is suitable for switching power supply. [See More]

  • Polarity: P-Channel
  • IDSS: -5500
  • V(BR)DSS: -12
  • QG: 60
1890668
from RS Components, Ltd.

Channel Type:P; Maximum Continuous Drain Current:4A; Maximum Drain Source Voltage:100V; Supplier Package:TO-205; Maximum Drain Source Resistance:0.69Ohms; Maximum Power Dissipation:20W; Configuration:Single; Category:Power MOSFET; Mounting:Through Hole [See More]

  • Polarity: P-Channel
  • rDS(on): 0.6900
  • V(BR)DSS: 100
  • IDSS: 4000
CSD22202W15 P-Channel NexFET? Power MOSFET -- CSD22202W15
from Texas Instruments

P-Channel NexFET? Power MOSFET 9-DSBGA -55 to 150 [See More]

  • Polarity: P-Channel
  • rDS(on): 0.0122
  • V(BR)DSS: -8
  • IDSS: -48000
-20V DUAL P-CHANNEL HEXFET POWER MOSFETIN A MICRO 8 PACKAGE -- 70017198 [IRF7555TRPBF from International Rectifier]
from Allied Electronics, Inc.

-20V DUAL P-CHANNEL HEXFET POWER MOSFETIN A MICRO 8 PACKAGE [See More]

  • Polarity: P-Channel
  • PD: 1200
  • rDS(on): 0.0550
  • Package Type: MICRO-8
FET General Purpose Power -- 2N6804
from International Rectifier

11 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA [See More]

  • Polarity: P-Channel
  • V(BR)DSS: 100
  • Operating Mode: Enhancement
  • rDS(on): 0.3000
FET General Purpose Power -- SI2301
from Micro Commercial Components Corp.

2.8 A, 20 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: P-Channel
  • V(BR)DSS: 20
  • Operating Mode: Enhancement
  • rDS(on): 0.1200
FET General Purpose Power -- 2N6804
from Microsemi Corp.

11 A, 100 V, 0.36 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA [See More]

  • Polarity: P-Channel
  • V(BR)DSS: 100
  • Operating Mode: Enhancement
  • rDS(on): 0.3600
FET General Purpose Power -- IRF9541
from Samsung Semiconductor Division

19 A, 60 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220 [See More]

  • Polarity: P-Channel
  • V(BR)DSS: 60
  • Operating Mode: Enhancement
  • rDS(on): 0.2000
FET General Purpose Power -- 2SJ583LS
from SANYO Electric Co., Ltd.

3.5 A, 250 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: P-Channel
  • V(BR)DSS: 250
  • Operating Mode: Enhancement
  • rDS(on): 1.5
FET General Purpose Power -- 2N6845
from Semelab Plc.

4 A, 100 V, 0.69 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF [See More]

  • Polarity: P-Channel
  • V(BR)DSS: 100
  • Operating Mode: Enhancement
  • rDS(on): 0.6900
FET General Purpose Power -- 2N7336
from Sensitron Semiconductor

1 A, 100 V, 0.7 ohm, N AND P-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: N-Channel; P-Channel
  • V(BR)DSS: 100
  • Operating Mode: Enhancement
  • rDS(on): 0.7000
FET General Purpose Power -- 2SJ370
from Shindengen Electric Manufacturing Co., Ltd.

10 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: P-Channel
  • V(BR)DSS: 60
  • Operating Mode: Enhancement
  • rDS(on): 0.1600
FET General Purpose Power -- SFF9140J
from Solid State Devices, Inc.

18 A, 100 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257 [See More]

  • Polarity: P-Channel
  • V(BR)DSS: 100
  • Operating Mode: Enhancement
  • rDS(on): 0.2300
FET General Purpose Power -- SDF9140JDAXGD1N
from Solitron Devices, Inc.

19 A, 100 V, 0.21 ohm, P-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: P-Channel
  • V(BR)DSS: 100
  • Operating Mode: Enhancement
  • rDS(on): 0.2100
FET General Purpose Power -- RBVQ2006P
from Supertex, Inc.

0.41 A, 90 V, 5 ohm, 4 CHANNEL, P-CHANNEL, Si, POWER, MOSFET [See More]

  • Polarity: P-Channel
  • V(BR)DSS: 90
  • Operating Mode: Enhancement
  • rDS(on): 5
SD1107BD
from Universal Semiconductor, Inc.

Apps include high speed pulse amplifiers & line drivers [See More]

  • Polarity: N-Channel; P-Channel (optional feature); Complementary (optional feature)
  • Type: DMOSFET
  • Operating Mode: Enhancement
  • V(BR)DSS: 130
FET General Purpose Power -- IXTA10P50P
from Zilog

10 A, 500 V, 1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB [See More]

  • Polarity: P-Channel
  • V(BR)DSS: 500
  • Operating Mode: Enhancement
  • rDS(on): 1