from Advanced Power Electronics Corp. USA
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP01N40G-HF-3 is in the popular SOT-89 small package which is BV 4 0 0V Fast Switching Characteristics Low Gate Charge widely used in commercial and... [See More]
- Polarity: N-Channel
- IDSS: 200
- V(BR)DSS: 400
- rDS(on): 16
from Allied Electronics, Inc.
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to... [See More]
- Polarity: N-Channel
- Transconductance: 0.0045
- V(BR)DSS: 400
- rDS(on): 3.6
from American Microsemiconductor, Inc.
MOSFET Arrays: N-Ch & P-Ch: Enhancement [See More]
- Polarity: N-Channel; P-Channel
- V(BR)DSS: 100
- MOSFET Operating Mode: Enhancement
- IDSS: 0.0250
from Digi-Key Corporation
MOSFET N-CH 20V DUAL CD 6-MLP [See More]
- Polarity: N-Channel
- Packing Method: Cut Tape (CT)
- Package Type: 6-WDFN Exposed Pad
from Mouser Electronics, Inc.
Fairchild's FDMx910 P-Channel PowerTrench ® MOSFETs feature the MicroFET ™ MOSFET package and provide exceptional thermal performance for their physical size (2 x 2 mm & 1.6 x 1.6 mm), making them well suited for switching and linear mode applications. Available with a 20V rating, the... [See More]
- Polarity: N-Channel; P-Channel
- rDS(on): 0.0200
- V(BR)DSS: -20
from ROHM Semiconductor, USA LLC
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market. Features. • This is a high-power, surface-mount MOSFET of... [See More]
- Polarity: N-Channel
- rDS(on): 110
- V(BR)DSS: 30
- PD: 1000
from Advanced Semiconductor, Inc.
38 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE [See More]
- Polarity: N-Channel
- V(BR)DSS: 100
- MOSFET Operating Mode: Enhancement
- rDS(on): 0.0550
from Anpec Electronics Corp.
6000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET [See More]
- Polarity: N-Channel
- V(BR)DSS: 20
- MOSFET Operating Mode: Enhancement
- rDS(on): 0.0300
from Calogic, LLC
100 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72 [See More]
- Polarity: N-Channel
- V(BR)DSS: 25
- MOSFET Operating Mode: Enhancement
- rDS(on): 300
from Central Semiconductor Corp.
Designed for high speed pulsed amplifier and driver applications [See More]
- Polarity: N-Channel
- V(BR)DSS: 105
- MOSFET Operating Mode: Enhancement
- IDSS: 0.5000
from Crystalonics
20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-46 [See More]
- Polarity: N-Channel
- V(BR)DSS: 20
- MOSFET Operating Mode: Enhancement
- Number of units in IC: 1
from Farnell Europe
MOSFET, N, D-PAK [See More]
- Polarity: N-Channel
- PD: 48000
- VGS(off): 2
- Number of units in IC: 1
from Infineon Technologies Corporation
39 A, 30 V, 0.0012 ohm, N-CHANNEL, Si, POWER, MOSFET [See More]
- Polarity: N-Channel
- V(BR)DSS: 30
- MOSFET Operating Mode: Enhancement
- rDS(on): 0.0012
from International Rectifier
3.5 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF [See More]
- Polarity: N-Channel
- V(BR)DSS: 100
- MOSFET Operating Mode: Enhancement
- rDS(on): 0.6000
from IXYS Corporation
21 A, 500 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET [See More]
- Polarity: N-Channel
- V(BR)DSS: 500
- MOSFET Operating Mode: Enhancement
- rDS(on): 0.2200
from Jameco Electronics
TRANSISTOR,2N7000,TMOS. FET (10) [See More]
- Polarity: N-Channel
- V(BR)DSS: 60
- MOSFET Operating Mode: Enhancement
- IDSS: 200000
from KEC Corporation
300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET [See More]
- Polarity: N-Channel
- V(BR)DSS: 60
- MOSFET Operating Mode: Enhancement
- rDS(on): 1.8
from Micro Commercial Components Corp.
115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET [See More]
- Polarity: N-Channel
- V(BR)DSS: 60
- MOSFET Operating Mode: Enhancement
- rDS(on): 7.5
from Microsemi Corp.
14 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA [See More]
- Polarity: N-Channel
- V(BR)DSS: 100
- MOSFET Operating Mode: Enhancement
- rDS(on): 0.2100
from MicroWave Technology, Inc.
S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET [See More]
- Polarity: N-Channel
- V(BR)DSS: 8
- MOSFET Operating Mode: Enhancement
- Package Type: SOT89; ROHS COMPLIANT, SOT-89, 4PIN
from Panasonic Corporation
100 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET [See More]
- Polarity: N-Channel
- V(BR)DSS: 30
- MOSFET Operating Mode: Depletion
- rDS(on): 12
from Powerex, Inc. - PA
50 A, 500 V, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET [See More]
- Polarity: N-Channel
- V(BR)DSS: 500
- MOSFET Operating Mode: Enhancement
- Package Type: POWER MODULE-7
from Samsung Semiconductor Division
115 mA, 60 V, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET [See More]
- Polarity: N-Channel; P-Channel
- V(BR)DSS: 60
- MOSFET Operating Mode: Enhancement
- rDS(on): 5
from SANYO Electric Co., Ltd.
2 A, 1500 V, 13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB [See More]
- Polarity: N-Channel
- V(BR)DSS: 1500
- MOSFET Operating Mode: Enhancement
- rDS(on): 13
from Semelab Plc.
1.1 A, 60 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 [See More]
- Polarity: N-Channel
- V(BR)DSS: 60
- MOSFET Operating Mode: Enhancement
- rDS(on): 3
from Sensitron Semiconductor
12 A, 500 V, 0.415 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA [See More]
- Polarity: N-Channel
- V(BR)DSS: 500
- MOSFET Operating Mode: Enhancement
- rDS(on): 0.4150
from Shindengen Electric Manufacturing Co., Ltd.
5 A, 200 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET [See More]
- Polarity: N-Channel
- V(BR)DSS: 200
- MOSFET Operating Mode: Enhancement
- rDS(on): 0.6500
from Solid State Devices, Inc.
45 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET [See More]
- Polarity: N-Channel
- V(BR)DSS: 60
- MOSFET Operating Mode: Enhancement
- rDS(on): 0.0220
from Solitron Devices, Inc.
25 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA [See More]
- Polarity: N-Channel
- V(BR)DSS: 100
- MOSFET Operating Mode: Enhancement
- rDS(on): 0.0650
from Sumitomo Electric Industries, Ltd.
12 V, N-CHANNEL, GaAs, SMALL SIGNAL, MOSFET [See More]
- Polarity: N-Channel
- V(BR)DSS: 12
- MOSFET Operating Mode: Depletion
- Package Type: HERMETIC SEALED, METAL CERAMIC, CASE LG, 2 PIN
from Supertex, Inc.
0.17 A, 700 V, 42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA [See More]
- Polarity: N-Channel
- V(BR)DSS: 700
- MOSFET Operating Mode: Depletion
- rDS(on): 42
from Toshiba America Electronic Components, Inc.
2 A, 250 V, 2.55 ohm, N-CHANNEL, Si, POWER, MOSFET [See More]
- Polarity: N-Channel
- V(BR)DSS: 250
- MOSFET Operating Mode: Enhancement
- rDS(on): 2.55
from Universal Semiconductor, Inc.
Gate Standoff Voltage. Available in a wide variety of packages. Low capacitance. Low ON resistance. P-Channel Complement Available [See More]
- Polarity: N-Channel; P-Channel (optional feature)
- V(BR)DSS: 130
- MOSFET Operating Mode: Enhancement
- IDSS: 500
