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On-Demand Webinar:

A Cost-effective, Highly Efficient 3-Phase AC/DC Power System with bi-directional Power Capability

This webinar presents an optimized two-level three-phase 20 kW hardware prototype PFC design using 1kV SiC MOSFETs. The performance of this SiC-based AC/DC converter is then compared against similarly rated AC/DC converter topologies with primary emphasis on the Vienna rectifier using SJ MOSFETs.

Originally presented: November 30, 2017
Duration: 1 hour
Presented by:


Grid-connected three-phase AC/DC power conversion is required in a wide range of applications - from power electronic interfaces of renewable energy systems (solar, wind and batteries) to regenerative motor drives (elevators, mills, etc.). These systems are designed to source/sink an AC current with a total harmonic distortion (THDI) of less than 5% in order to meet standards such as IEEE 519 and IEC/EN 61000-3-4.

This webinar explores a cost-effective, highly efficient design for an industrial PFC application utilizing the latest silicon carbide based power devices. The proposed two-level SiC PFC system and comparison Vienna rectifier are designed to meet the same system-level specifications.

Key Take-Aways

  • AFE design using Wolfspeed SiC MOSFETs achieves high power density with a simple topology and control approach
  • When compared to Vienna Rectifier (650V devices), AFE design delivers up to 1% higher efficiency with similar BOM costs
  • SiC MOSFETs offer symmetrical third quadrant operation and predictable linear Coss behavior at high Fsw
  • When using SiC customers can achieve higher efficiency and bi-directional power at no additional cost


Jianwen Shao, Applications Manager

Jianwen Shao received his M.S. degree in Electrical Engineering from Virginia Tech, in 2000 and Tsinghua University in China in 1995. He has many years' experience as an applications engineer in power semiconductor industry. Currently, Jianwen is leading Wolfspeed's applications group for SiC power devices.

Edgar Ayerbe, Product Marketing Manager

Edgar Ayerbe received his B.S. degree in electrical engineering from Rensselaer Polytechnic Institute in 1995. In 2011, Edgar joined Cree, Inc. as a product engineer focused on technical support for Cree's SiC Schottky diode portfolio. From 2011 until 2013, he was involved in the product definition, characterization and release of 1200V SiC Schottky diode product line. In 2013 Edgar expanded his role to lead the market adoption of Wolfspeed SiC MOSFETs.