Gallium nitride (GaN) power devices have entered mainstream markets and have been shown to deliver all three of the traditional goals of power design in power supplies, inverters and other power systems. These are (a) higher efficiency (b) smaller size / higher power density and (c) lower system BOM cost.
With enhancement mode GaN Devices, known as E-HEMTs, power supply design is very similar to design using MOSFETs, with far higher performance results. Design engineers looking to realize these results in their systems should attend this webinar to learn design techniques, see results, understand layout and thermal performance tradeoffs and finally, understand several key topologies where GaN excels.
Three areas of study are being presented in this webinar, covering areas from 200W to 3kW to 10+ kW.
First, the most common circuit enabled by GaN is the Totem Pole Bridgeless PFC converter. This topology, not possible with MOSFET technologies, and highly enabled by GaN, offers significant efficiency and power density improvements over traditional PFC Boost architectures or other bridgeless techniques. A 3kW design will be reviewed including layout, thermal design, digital design and performance results. This design features continuous conduction mode (CCM), 90-265V input, 400V output, 99% peak efficiency, 0.99 power factor and operates with a digital power control loop.
The LLC topology is one of the most used topologies in the industry. The webinar will review and compare an LLC circuit based on GaN as compared to silicon MOSFETs. Detailed equations and magnetic, electrical and layout design considerations will be reviewed.
Finally, GaN is being used in energy and automotive areas from 5kW to 100kW. Design techniques to achieve such high power yet still take advantage of the performance of GaN will be reviewed.
- Learn detailed design techniques for the most common topologies in power - PFC and LLC
- Understand electrical, thermal and layout techniques with performance data supporting the designs
- Learn how both high power AND high frequency can be reached using GaN transistors
Dr. Ruoyu (Roy) Hou is a Senior Application Engineer at GaN Systems Inc. He received his M.S. degree from the Illinois Institute of Technology, Chicago, IL, USA and the Ph.D. degree from the McMaster University, Hamilton, ON, Canada, both in electrical engineering. He was an Electrical Engineer with GE Transportation, Erie, PA, USA and was a Post-Doctoral Research Fellow at McMaster Automotive Resource Centre (MARC), a Canada Excellence Research Centre. His research interests include power electronics, modeling and loss analysis of GaN devices, design of high-power converters and magnetics. Dr. Hou received several honors. He was a recipient of the International Excellence Award from McMaster University and was a co-recipient of the Chrysler Innovation Award for the Automotive Partnership Canada (APC) project.
Larry Spaziani is GaN Systems VP Sales and Marketing. He was previously with International Rectifier, where he was Executive Director, Enterprise Power Business Development, responsible for managing its new product development team and forging relationships with external business partners and technology leaders. He has a strong track record at executive management level in the semiconductor industry working for companies such as Unitrode and Texas Instruments, where he was responsible for off-line and isolated power products.