Webinar explores the use of the latest SiC MOSFETs in new low inductance packaging to design a PFC system. When combined with a DC/DC circuit the system can achieve system-level efficiency suitable for 80+ titanium standard. Attendees will learn the tradeoffs of using different switches and will provide a review of a design which delivers a peak efficiency > 98.5% and THD < 5%. The design has higher power density than existing silicon 80+ platinum solutions and with higher efficiency all at equivalent EBOM cost.
- Learn how to enable server and telecom power supplies to reach 80+ titanium efficiency requirements with no additional cost or complexity
- Review a full reference design example of how to implement Totem pole PFC using SiC MOSFETs
- Understand the benefits of low-inductance discrete SiC MOSFET packaging and Kelvin-contact
- See the latest SiC MOSFETs with low conduction losses, switching losses and Qrr, enabling new, simplified power conversion topologies
Adam Barkley received B.S. and Ph.D. degrees in electrical engineering from the University of South Carolina, Columbia, SC, USA. From 2011 until 2014, he worked at Arkansas Power Electronics International (APEI) where he was involved in the complete design (i.e., electrical design, simulation, layout, fabrication, control development, and testing) of various high-performance wide-bandgap-based power electronic systems. In 2014, Dr. Barkley joined Cree, Inc. and is presently working as a SiC Power Device Application Engineer where he supports customer design activities using discrete SiC MOSFETs, Diodes, and Power Modules.
Edgar Ayerbe received his B.S. degree in electrical engineering from Rensselaer Polytechnic Institute in 1995. In 2011, Edgar joined Cree, Inc. as a product engineer focused on technical support for Cree's SiC Schottky diode portfolio. From 2011 until 2013, he was involved in the product definition, characterization and release of 1200V SiC Schottky diode product line. In 2013 Edgar expanded his role to lead the market adoption of Wolfspeed SiC MOSFETs.