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PECVD Silicon Carbide Thin Film for Silicon Wafers
Rogue Valley Microdevices offers PECVD Silicon Carbide (SiC), which is a single side deposition. This highly durable thin film can be deposited alone or within stack of PECVD Oxide and/or Nitride. PECVD Silicon Carbide is the perfect choice for use as a hard mask for bulk micromachining of your finished wafers. We are able to process wafer diameters of 50mm up to 300mm.
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Nitrogen Annealing Available including Forming Gas
Rogue Valley Microdevices offers Nitrogen, Nitrogen/Oxygen, and Forming Gas Annealing. Nitrogen Annealing after PECVD deposition can be important if wafers are exposed to high temperatures later on in the process. Adding an Anneal will densify PECVD films to make them more stable during thermal cycling.
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Low Stress LPCVD Nitride for Silicon Wafers
Rogue Valley Microdevices can process at our in-house facility in Medford Oregon silicon wafers, 50mm-200mm with LPCVD Nitride. You can order LPCVD Nitride as thick as 5μm or as thin as 100Å! Low Stress LPCVD Nitride is an excellent film for building Membranes, Cantilever Beams and other mechanical structures.
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50mm-300mm Silicon Wafer Supplier for Thin Films
Silicon Wafers - Because of our ability to process all wafers diameters (50mm-300mm) Rogue Valley Microdevices maintains a diverse inventory for customers whom require either bare silicon wafers or silicon wafers with Thin Films. Our ability to provide you with both thin films services and silicon wafers can help reduce cycle time as well as shipping cost.
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LPCVD Nitride - Stoichiometric 800 MPa
Rogue Valley Microdevices is proud to be your leading source of high quality LPCVD films. Our Stoichiometric LPCVD Nitride can be a very effective insulator, and works great as a KOH etch mask when deposited over thermal oxide.
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PVD Metals, Sputtered Cu, Ti, Ta, Al, Ni, W, Cr
Rogue Valley Microdevices foundry can provide Sputtered Metals and Sputtered Dielectrics. Our sputtering capabilities include PVD Metals, PVD Dielectrics, and Evaporated Metals including but not limited to Copper, Aluminum, Silicon, Silicon Nitride, and Evaporated precious metals on wafers sizes 50mm to 300mm in diameter.
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Evaporated Metal Stacks-Cr/Au, Ti/Au, Ti/Pt, Cr/Pt
Rogue Valley Microdevices offers E-Beam Evaporation of metal stacks including but not limited to Ti/Au, Ti/Pt, Cr/Au, and Cr/Pt. Our E-Beam Evaporation process provides excellent film thickness uniformity and is done at low temperatures that will not damage photoresist for metal lift-off. Our process capabilities allow us to deposit up to six different materials in-situ if required.
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Wet Thermal Oxidation - up to 15 um thick
Rogue Valley Microdevices offers Wet Thermal Oxidation services up to 15µm. Our Wet Thermal Oxidation process is designed to provide the best quality film. We offer a film thickness range of 500 angstroms to 15 microns. Starting Silicon Wafers (50mm-200mm) can be provided or customers can send in their own wafers.
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PECVD Silicon Carbide (SiC) Film for 2"-12" wafers
Rogue Valley Microdevices is pleased to offer PECVD Silicon Carbide. This highly durable thin film can be deposited alone or within stack of PECVD Oxide and/or Nitride films. PECVD Silicon Carbide is the perfect choice for use as a hard mask for bulk micromachining. Rogue Valley Microdevices process all wafers and films in-house at our Medford, Oregon facility.
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Dry Thermal Oxide available for Silicon Wafers
Rogue Valley Microdevices offers Dry Thermal Oxide. Our ultra pure Dry Oxidation process is available for those applications requiring thinner oxides. We offer Chlorinated and Non-Clorinated Dry Thermal Oxide. Using Dry Chlorinated Thermal Oxide can help your devices perform to their highest potential by eliminating metal ions.
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