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PECVD Oxide available up to 5um thick
Rogue Valley Microdevices is pleased to offer you the option of PECVD Silicon Oxide. Our PECVD Oxide is a single sided film that has been optimized for wafers requiring minimal thermal processing, and is often used during the semiconductor manufacturing process to form intra-metal dielectric stacks. PECVD Oxide is also used in MEMS and Surface micro-machining processes.
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Silicon Wafers Available with Thin Films
Silicon Wafers - Because of our ability to process all wafers diameters (50mm-300mm) Rogue Valley Microdevices maintains a diverse inventory for customers whom require either bare silicon wafers or silicon wafers with Thin Films. Our ability to provide you with both thin films services and silicon wafers can help reduce cycle time as well as shipping cost.
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Sputtered PVD Metals available for Silicon Wafers
Rogue Valley Microdevices provides PVD Metals including sputtered Copper, sputtered Tantalum, sputtered Titanium, sputtered Tungsten, sputtered Nickel, sputtered Chrome, and sputtered Aluminum. Our process has an in-situ RF etch that ensures good film adhesion and Ohmic contact to conductive layers. We can provide the metal barrier layers and dielectric films on wafers sizes 50mm to 300mm.
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Sputtered Metals including Cu, Al, and Ni
Rogue Valley Microdevices provides PVD Metals including sputtered Copper, sputtered Tantalum, sputtered Titanium, sputtered Tungsten, sputtered Nickel, sputtered Chrome, and sputtered Aluminum. Our process has an in-situ RF etch that ensures good film adhesion and Ohmic contact to conductive layers. We can provide the metal barrier layers and dielectric films on wafers sizes 50mm to 300mm.
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Dry Chlorinated Thermal Oxide- Class 100 Cleanroom
Rogue Valley Microdevices is please to offer you the option of Dry Chlorinated Thermal Oxidation. Our Dry Chlorinated Thermal Oxidation is recommended for use in MOS and other active device fabrication processes. Using Dry Chlorinated Thermal Oxide can help your devices to perform to it's highest potential by eliminating metal ions.
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PECVD Silicon Carbide Thin Film
Rogue Valley Microdevices offers PECVD Silicon Carbide, which is a single side deposition. This highly durable thin film can be deposited alone or within stack of PECVD Oxide and/or Nitride. PECVD Silicon Carbide is the perfect choice for use as a hard mask for bulk micromachining of your finished wafers. We are able to process wafer diameters of 50mm up to 300mm.
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Forming Gas and Nitrogen Annealing Available
Rogue Valley Microdevices offers Nitrogen, Nitrogen/Oxygen, and Forming Gas Annealing. Nitrogen Annealing after PECVD deposition can be important if wafers are exposed to high temperatures later on in the process. Adding an Anneal will densify PECVD films to make them more stable during thermal cycling.
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Low Stress LPCVD Nitride - Tensile Stress <250 MPa
Rogue Valley Microdevices is an industry leader for high quality LPCVD films. You can order LPCVD Nitride as thick as 5μm or as thin as 100Å! Low Stress LPCVD Nitride is one of our most popular films and is often used for building Membranes, Cantilever Beams and other mechanical structures
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Discover the Right Process for Your RF/MMIC Design
Partner with the world's premier commercial foundry - TriQuint Semiconductor - to develop cost-effective mmWave applications.
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Low Stress LPCVD Nitride - < 250 MPa Tensile
Rogue Valley Microdevices is an industry leader for high quality LPCVD films. You can order LPCVD Nitride as thick as 5μm or as thin as 100Å! Low Stress LPCVD Nitride is one of our most popular films and is often used for building Membranes, Cantilever Beams and other mechanical structures.
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More product announcements from Rogue Valley Microdevices, Inc.
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