TriQuint

The TriQuint TGF3020-SM is a 5W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 4.0 to 6.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. Read more...

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TriQuint

DC-12GHz GaN Die Transistor Family consist of discrete GaN on SiC HEMT. Thy are designed using TriQuint's proven TQGaN25 production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. Read more...

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Fairchild Semiconductor

On-demand Webinar:

MOSFET gate drive solutions can significantly impact the performance of a switch mode power supply. Not only are the switching losses in the FET, and thereby the efficiency, directly affected by the drive, but ringing and EMI can be a consequence of poor gate drive design. In many cases, these problems can be minimized by using integrated gate drivers... Read more...

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Skyworks Solutions, Inc.

The SMV1275-079LF is a silicon hyperabrupt junction varactor diode specifically
designed for battery operation. The specified high-capacitance ratio and
low-series resistance make this varactor appropriate for low phase-noise
Voltage-Controlled Oscillators (VCOs) used at frequencies in wireless systems up
to and above 2.5 GHz.
Applications for the SMV1275-07... Read more...

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Infineon Technologies AG

Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) expands its discrete IGBT portfolio for high power applications introducing the TO-247PLUS package. The new package enables up to 120A IGBT co-packed with a full rated diode in the same footprint and pin-out as JEDEC standard TO-247-3. Read more...

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Infineon Technologies AG

Infineon Technologies Bipolar GmbH & Co. KG launches bipolar power modules in solder bond technology to address the specific requirements of cost-effective applications. With these new PowerBlock modules the company expands its already comprehensive power module portfolio which, so far, was only using pressure contacts. Read more...

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Advanced Power Electronics Corp.

Advanced Power Electronics Corporation's power MOSFETS now include devices offering improved on-resistance down to 1.2mohms. These devices in the PMPak®5x6, a RoHS-compliant halogen-free 5mmx6mm package with a standard SO-8 footprint, are pin-compatible with other "power" SO-8 solutions in the marketplace Read more...

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Advanced Power Electronics Corp.

As part of its commitment to responsible manufacturing and a clean environment, Advanced Power Electronics Corporation continues to expand the number of products it offers that are produced with a halogen-free (HF) molding compound. All of its products have been Pb-free and RoHS-compliant for several years and many products that were newly introduced in 2008 were halogen free also. Read more...

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Advanced Power Electronics Corp.

Advanced Power Electronics Corporation's power MOSFETS includes devices in the new PMPak®5x6, a RoHS-compliant 5mmx6mm package with a standard SO-8 footprint but offering improved thermal performance and on-resistance Read more...

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Advanced Power Electronics Corp.

Advanced Power Electronics Corporation's expanding family of power MOSFETS now includes more devices in the new PMPak®3x3, a RoHS-compliant halogen-free 3mmx3mm package offering improved thermal performance and on-resistance. Devices are currently available with Rds(on) down to 4.5mohms and are pin-compatible with other DFN3x3 power MOSFETs in the marketplace. Read more...

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