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Supplier: ARM Inc.
Description: data. TrustZone Internal Memory Wrapper (PL141) can partition a single larger on-chip RAM into Secure and Non-Secure) Worlds TrustZone off-chip memory TrustZone RAM - in DDR memory - typically 256K-1M for decrypted/checked code. Off-chip memory
- Type: Memory
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Supplier: Quarktwin Technology Ltd.
Description: EEPROM Memory IC 512Kbit I²C 400 kHz 900 ns Die
- Access Time: 900 ns
- Density: 512 kbits
- IC Package Type: Other
- Memory Category: EEPROM, Other
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Supplier: Nova Technology(HK) Co.,Ltd
Description: EEPROM Memory IC 512Kb (64K x 8) IC 400 kHz 900 ns Die
- Density: 512 kbits
- IC Package Type: Other
- Memory Category: PROM, EPROM, EEPROM
- Operating Temperature: 0.0 to 70 C
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Supplier: Quarktwin Technology Ltd.
Description: Memory IC
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Supplier: Nova Technology(HK) Co.,Ltd
Description: SRAM Memory IC 16Mb (512K x 32) Parallel 20 ns 76-CFP (45.72x51.31)
- IC Package Type: Other
- Memory Category: SRAM
- Operating Temperature: -55 to 125 C
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Description: IC 512 MB FLASH MEMORY
- Memory Category: Flash, Other
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Supplier: Lingto Electronic Limited
Description: IC 512 MB FLASH MEMORY
- Density: 512000 kbits
- Memory Category: Flash, Other
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Supplier: Lingto Electronic Limited
Description: IC EEPROM 512KBIT I2C 400KHZ DIE
- Access Time: 900 ns
- Density: 512 kbits
- Memory Category: EEPROM, Other
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Supplier: Acme Chip Technology Co., Limited
Description: MEMORY
- Cycle Time: 70 ns
- Density: 8000 kbits
- IC Package Type: Other
- Memory Category: SRAM, Other
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Supplier: Quarktwin Technology Ltd.
Description: SRAM Memory IC 16Mbit Parallel 20 ns 76-CFP (45.72x51.31)
- Access Time: 20 ns
- Density: 16000 kbits
- IC Package Type: QFP, Other
- Memory Category: SRAM, Other
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Supplier: Nova Technology(HK) Co.,Ltd
Description: SDRAM - DDR3L Memory IC 2Gb (512M x 4) Parallel 933 MHz 20 ns 78-FBGA (8x10.5)
- IC Package Type: Other
- Memory Category: DRAM
- Operating Temperature: 0.0 to 95 C
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Supplier: Nova Technology(HK) Co.,Ltd
Description: SDRAM - DDR3L Memory IC 2Gb (512M x 4) Parallel 800 MHz 13.75 ns 78-FBGA (8x10.5)
- IC Package Type: Other
- Memory Category: DRAM
- Operating Temperature: 0.0 to 95 C
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Supplier: Win Source Electronics
Description: Manufacturer: Microchip Technology Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1104581-WE-512K8-150 CC Packaging: Bulk Mounting: SMD (SMT) Operating Supply Voltage: 5 V Categories: EEPROM Case / Package: CDIP
- IC Package Type: DIP, Other
- Memory Category: EEPROM
- Operating Temperature: 0.0 C
- Supply Voltage: Other
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Supplier: DigiKey
Description: IC FLASH 512MBIT SPI 24TFBGA
- Density: 512000 kbits
- IC Package Type: Other
- Memory Category: Flash
- Operating Temperature: -40 to 85 C
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Supplier: Lingto Electronic Limited
Description: IC SRAM 16MBIT PARALLEL 76CFP
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 512Kbit I2C SOP-8 EEPROM ROHS
- Density: 512 kbits
- IC Package Type: SOP
- Memory Category: EEPROM
- Supply Voltage: Other
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Supplier: DigiKey
Description: IC FLASH 512MBIT SPI 8WSON
- Density: 512000 kbits
- IC Package Type: Other
- Operating Temperature: -40 to 85 C
- Supply Voltage: Other
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Supplier: Win Source Electronics
Description: Manufacturer: Microchip Technology Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1104854-WS512K8-35CM Mounting: SMD (SMT) Categories: RAM Case / Package: Module Popularity: Low Fake Threat In the Open Market: 51 pct. Supply and Demand
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Supplier: Allied Electronics, Inc.
Description: EPROM, 512K OTP 28DIP
- Access Time: 45 ns
- Density: 512 kbits
- IC Package Type: Other
- Memory Category: EPROM
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Supplier: DigiKey
Description: IC SRAM 512KBIT SPI/QUAD 8SOIC
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Description: IC SRAM 512KBIT SPI/DUAL 8SOIC
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Supplier: Acme Chip Technology Co., Limited
Description: IC FLASH 512MBIT SPI 24TFBGA
- Density: 512000 kbits
- IC Package Type: BGA, Other
- Supply Voltage: Other
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 2.7V~3.6V 50MHz 512Mbit LGA-8(6x8) NAND FLASH ROHS
- Density: 512000 kbits
- Operating Temperature: -25 to 85 C
- Supply Voltage: Other
- Technology: NAND
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Supplier: Lingto Electronic Limited
Description: 8G, DDR3L, 512M X 16, 1.35V, 96
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Supplier: Rochester Electronics
Description: S25FS512S - 512-Mbit MIRRORBIT Flash Memory
- IC Package Type: BGA, Other
- Memory Category: Flash
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Supplier: Utmel Electronic Limited
Description: IC EPROM 512K PARALLEL 32PLCC
- Access Time: 90 ns
- Density: 524 kbits
- IC Package Type: Other
- Memory Category: EPROM, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Micron Technology Inc. Win Source Part Number: 208873-MT41K512M8RG- 107 Packaging: Reel - TR Mounting: SMD (SMT) Technology: SDRAM - DDR3L Memory Type: Volatile Memory Size: 4Gb (512M x 8) Access Time: 20ns Categories: Integrated Circuits
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Supplier: Rochester Electronics
Description: S25FS512S - 512-Mbit MIRRORBIT Flash Memory
- IC Package Type: Other
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Supplier: TT Semiconductor, Inc.
Description: TT Semiconductor is the leading manufacturer of electronic components designed to survive under extreme temperature ranges and harsh environmental conditions. The current standard product offering is focused on high performance analog and memory devices. TT
- Density: 512000 kbits
- IC Package Type: SOIC, DIP, Other
- Memory Category: Flash
- Operating Temperature: -55 to 200 C
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Description: DRAM Chip DDR3L SDRAM 2G-Bit 512Mx4 1.35V 78-Pin F-BGA
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Supplier: Utmel Electronic Limited
Description: MICROCHIP - SST25VF512A-33-4C-SA E - FLASH MEMORY, 512 KBIT, 33 MHZ, 8-SOIC
- Access Time: 12 ns
- Density: 4096 kbits
- Endurance: 100000 Write/Erase Cycles
- IC Package Type: SOIC, Other
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Supplier: Rochester Electronics
Description: 23LCV512 - 512K, 2.5V SPI SERIAL SRAM, Vbat
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Supplier: VAST STOCK CO., LIMITED
Description: DRAM 8G 1.35V 512Mx16 933MHz DDR3 -40-95C
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Supplier: Utmel Electronic Limited
Description: IC SRAM 512K SPI 20MHZ 8SOIC
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Up to 20 MIPS Throughput at 20MHz On-Chip 2-Cycle Multiplier High-Endurance Non-Volatile Memory Segments: 4/8/16/32KBytes of In-System Self-Programmable Flash Program Memory 256/512/512/1KBytes EEPROM 512/1K/1K/2KBytes (read more)
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between other vehicle models. The LG ADAS front camera features SDRAM and serial NOR flash memory from Micron Technology as well as image sensors from Onsemi. The following is a partial deep dive into the LG ADAS front camera from TechInsights. Summary 512 MB (read more)
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-bit microcontroller and 128 MB of NOR flash memory. Also, it includes the 512 MB mobile LPDDR4x SDRAM and 128MB of DDR3L SDRAM memory from Micron. Other electronic components include: Texas Instruments’ (read more)
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contains the following electronic components: The multichip memory module from SanDisk that has 512 GB 3D TLC NAND flash, a SanDisk PCIe Gen4 SSD controller and a power management IC from Qorvo. (Learn more about memory chips on Globalspec.com) USB board The USB board (read more)
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Semiconductor’s FPGA (Learn more about memory chips on Globalspec.com) Touchbar board The touchbar board controls the touchscreen display on the Apple Macbook Pro 13. The (read more)
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Samsung’s 512MB SDRAM memory Fitipower’s adjustable charge pump Realtek’s 2x2 MU-MIMO Wi-Fi 802.11 a/b/g/h/ac (Learn more about memory chips on (read more)
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memory HiSilicon’s 8K UHD mobile camera SoC RichTek’s 8- and 3-amp step-down DC-DC converter Nexperia’s dual power MOSFET (read more)
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Qualcomm with an octa-core Snapdragon 8 generation and 8 GB mobile LPDDR5X SDRAM multi-chip memory from Samsung. Other electronic components include: 256 GB 3D TLC V-NAND flash and camera power management from Samsung NFC and secure element chip, SIM card interface and battery (read more)
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ARM cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz Serial programming interface (EzPort) FlexBus external bus interface DDR controller interface NAND Flash controller interface 3 to 32MHz and 32kHz Crystal (read more)
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Features • Core: Arm® 32-bit Cortex®-M4 CPU with FPU, Adaptive real-time accelerator (ART Accelerator™) allowing 0-wait state execution from Flash memory, frequency up to 180 MHz, MPU, 225 DMIPS/1.25 DMIPS/MHz (Dhrystone 2 (read more)
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Falcon Flex-a new F-16 business practice
It was less expensive to use readily available 1,024K memory chips than the older technology, more costly 512K memory chips .
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Software-implemented EDAC protection against SEUs
This section analyzes several possible implementations of a 512K 8 memory chip .
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A single transistor EEPROM cell and its implementation in a 512K CMOS EEPROM
This paper describesan electrically programma- ble and erasablenonvolatile memory cell employ- ing a single floating gate transistor(l), and its implementationin a 512K CMOS EEPROM memory chip .
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Reconfigurable molecular dynamics simulator
Three ad- ditional 512K ×32 memory chips would be needed for the LJFC lookup table for each pipeline and the remaining mem- ory would be internal to the FPGAs.
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G5 harddisks and PCI-X - MacRumors Forums
The thing that coul really boost speeds in Gobi is the increase of the L2 cache which will provide 512K more memory for the chip to access at the processor clock rate.
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CR4 - Thread: Laptop Sreensaver Problem
I've turned off a lot of bells and whistles on my Toshiba Satellite w/Vista snf 2Meg memory / Intel Centrino Duo to speed it up to match my XP desktop with 512K memory and a Pentium chip .
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Variation-aware and adaptive-latency accesses for reliable low voltage caches
In this paper, our experiment data and observation is obtained by the measurement of a ULV 512K -bit embedded memory chip [9].
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An FPGA-based implementation of AMB controller for MSFW
An ESA Leon2 memory controller is attached to LEON3 processor through AMBA AHB bus, which manage two chip of 1M×16bit Flash memory and two chip of 512K ×16bit SRAM.
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EUROPRACTICE-MCM: a European initiative to create an MCM infrastructure and to stimulate commercial MCM take-up
The memory is assembled as six 512K chips on the MCM-L substrate.
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New Products
It requires 512K memory and an 8087 coprocessor chip (80287 on the AT).