Supplier: Excelitas Technologies Corp.
Description: Key Features “Side-looking” LLC package – SMT-compatible High gain at low bias voltage Large bandwidth Fast response, TR ~ 300ps Low noise RoHS-compliant Applications Laser meters for 635 nm or 650 nm
- PN, PIN, or Avalanche: Avalanche Photodiode
- Spectral Response: Visible, IR
- Sensitivity: 35 A/W
- Spectral Response Range: 500 to 1000 nm
Supplier: First Sensor AG
Description: PIN photodiodes with enhanced sensitivity in blue and green spectral range. Features: Low capacitance Very low dark current Long-term stability of detection properties
- PN, PIN, or Avalanche: PIN Photodiode
- Spectral Response: Visible
- Spectral Response Range: 400 to 650 nm
- Active Area Diameter or Length: 0.7874 inch
Supplier: OSI Optoelectronics
Description: OSI Optoelectronics's FCI-InGaAs-36C is an OC-192 (SONET/SDH) capable photosensitive device, exhibiting low dark current and good performance stability. Both Anode and Cathode contacts appear on the chip's top facet and it makes ideal component in high-speed optical data transport applications at
- PN, PIN, or Avalanche: PIN Photodiode
- Spectral Response: IR
- Sensitivity: 0.8500 A/W
- Spectral Response Range: 910 to 1650 nm
Supplier: HORIBA Scientific
Description: Solid state detectors are opto-electronic devices used to convert incident photons to electronic signals. Available with wavelength ranges from below 200 nm to beyond 20 µm, solid state detectors offer sensitivity, dependability, cost and efficiency. HORIBA Scientific has a large number
- Spectral Response Range: 800 to 1650 nm
- Noise Equivalent Power (NEP): 1.00E-14 W/Hz½
- Photodiode Material: Indium Gallium Arsenide
Supplier: PHOTONIS Technologies SAS
Description: The PLANACON Photon Detector is a unique square shaped detector which allows for many detectors to be tiled in order to form a larger image. The PLANACON design provides a high degree of immunity from magnetic fields. The PLANACON is a microchannel plate based design for superior resolution across
- Array: Yes
- Spectral Response Range: 200 to 650 nm
- Active Area Diameter or Length: 2.09 inch
- Rise Time: 0.6000 ns
Supplier: Source Photonics, Inc.
Description: FIBER OPTIC PHOTODIODE DETECTOR, 1100-1650nm, PANEL MOUNT, FC CONNECTOR
- Spectral Response Range: 1100 to 1650 nm
- Operating Temperature: -40 to 185 F
- Dark Current: 0.4000 nA
Supplier: Newark / element14
Description: Photo Diode; Wavelength Typ:650nm; Sensitivity:0.45A/W; Bandwidth:14kHz; Dark Current:2.5pA; Diode Case Style:DIP; No. of Pins:8; Operating Temperature Range:0°C to +70°C; Leaded Process Compatible:Yes; Package / Case:8-PDIP
- Sensitivity: 0.4500 A/W
- Spectral Response Range: 650 nm
- Operating Temperature: 32 to 158 F
- Dark Current: 0.0025 nA
Supplier: Excelitas Technologies Corp.
Description: Si APD 4 Channel Single Photon Counting Array The SPCM-AQ4C is a self-contained 4-channel module that detects single photons of light over the wavelength range from 400nm to 1060 nm. It uses a total of four unique silicon APD with a peak photon detection efficiency of more than 65% @ 650 nm over
- Photosensor Type: Avalanche Photodiode
- Output Type: Photon Counting
- Spectral Response: 400 to 1060 nm
- Supply Voltage: 5 volts
Fiber Optic Transmitters - DC to 50 Megabaud Versatile Link Fiber Optic Transmitter, Vertical Package for 1 mm POF -- AFBR-1634ZSupplier: Avago Technologies
Description: The AFBR-16xxZ transmitter utilizes a 650 nm LED source with integrated optics and driver IC for efficient coupling into 1 mm Polymer Optical Fiber (POF). The AFBR- 26x4Z/25x9Z receiver consists of an IC with an integrated photodiode to produce a logic compatible output. The transmitter input
- Light Source: LED
- Connector Type: Other
- Transmitter Rise Time: 5 ns
- Wavelength: 630 to 685 nm
Supplier: Digi-Key Electronics
Description: IC PHOTODIODE/AMPLIFIER 8DIP
- Output Type: Voltage Output
- Spectral Response: 650 nm
- Supply Voltage: 36 volts
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EU project POF-PLUS: Gigabit transmission over 50 m of step-index plastic optical fibre for home networking
Fig. 2 Bandwidth measurement of the transmission link including 50 m SI-POF, the 650 nm photodiode and either the VCSEL or the RCLED.
Integrated photodiodes in standard CMOS technology for CD and DVD applications
For deeper nwells (related to the technology), and for lower wavelengths (X< 650 nm ), photodiode geometry will certainly become important because of the smaller contribution of slow substrate current.
Study on Determination of Six Transition Metal Ions in Biological Samples by SPE and RP‐HPLC
A tridimensional chromatogram was recorded from 450~ 650 nm with photodiode array detec- tor and the chromatogram of 590 nm is shown in Fig. 1.
Study on the Determination of Cobalt, Nickel, Copper, Zinc and Vanadium in Environmental Samples by a Rapid High‐Performance Liquid Chromatography
A tridimensional (X axis: re- tention time, Y axis: wavelength, Z axis: absorbance) chro- matogram was recorded from 450~ 650 nm with photodiode array detector, and the chromatogram of 550 nm is shown in Fig. 4.
pn photodiode in 0.35‐μm high-voltage CMOS with 1.2-GHz bandwidth
… 0.35‐μm digital CMOS technology.7 In 0.15‐μm CMOS, a vertical pin photodiode achieved a bandwidth of 1.2 GHz and a responsivity of 0.39 A∕W at −8 V reverse voltage for 650 nm .8 Photodiodes in nanometer CMOS possess …
Journal of the Brazilian Chemical Society - Study on the determination of lead, cadmium, mercury, nickel and zinc by a rapid column high-performance liquid chr...
A tridimensional (X axis: retention time, Y axis: wavelength, Z axis: absorbance) chromatogram was recorded from 450~ 650 nm with photodiode array detector and the chromatogram of 555 nm was shown in Figure 4.
Journal of the Brazilian Chemical Society - Simultaneous determination of palladium, platinum and rhodium by on-line column enrichment and HPLC with 2,4-dihydr...
A three-dimensional (X axis: retention time, Y axis: wavelength, Z axis: absorbance) chromatogram was recorded from 400~ 650 nm with photodiode array detector and the chromatogram of 515 nm is shown in Figure 2.
Longitudinal-field GaAs/AlGaAs semi-insulating multiple quantum wells photorefractive devices
The changes of the transmitted signal are detected using a silicon photodiode with 650nm long pass filters, and recorded as a function of time on a digital storage oscilloscope.
Integrated Silicon Optoelectronics
In order to avoid slow diﬀusion of photogenerated carriers from the substrate for 780 and 650 nm , the photodiode formed by the N- epitaxial layer and the shallow P (SP) implant was used.
Laser Ignition of Various Pyrotechnic Mixtures – an Experimental Study
The time dependent behav- ior of the combustion products was recorded using a high acquisition rate (about 1 sample per ms) CCD spectrometer (200– 650 nm ), a photodiode fitted with a narrowband filter (540–560 nm), and a high-speed pressure transducer.
Measuring Instrument For Dissolved Inorganic Nitrogen And Phosphate Ions
In our instrument, the penetration rate of seawater colored by the indophenol method is measured by using an LED (wavelength: 650 nm ) and silicon photodiode (path length: 10 mm).
Determination of palladium, platinum, and rhodium by HPLC with online column enrichment using 4-carboxylphenyl-thiorhodanine as a precolumn derivatization reag...
A tridimensional (X axis: reten- tion time, Y axis: wavelength, Z axis: absorbance) chro- matogram was recorded at 400 ~ 650 nm with a photo- diode array detector; the chromatogram at 510 nm is shown in Fig. 2.
Site‐Selective Formation of Optically Active Inclusion Complexes of Alkoxo‐Subphthalocyanines with β‐Cyclodextrin at the Toluene/Water Interface
The absorption spectra of the toluene phase were continuously measured in the range l = 300– 650 nm with a photodiode -array UV/Vis detector (SPD-M6 A, Shi- .
Simultaneous Determination of Palladium, Platinum and Rhodium by On-Line Column Enrichment and HPLC with 4-Hydroxy-1-Naphthalthiorhodanine as Pre-Column Deriva...
A tridimensional (X axis: retention time, Y axis: wavelength, Z axis: absorbance) chromatogram was recorded from 400– 650 nm with a photodiode array detector.
Nanopositioning and nanomeasuring machine for high accuracy measuring procedures of small features in large areas
It is comprised of a semiconductor laser diode ( 650 nm ), the photodiodes for focusing error detection and their pre-amplifiers.