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  • Nitride (AIN, BN)
    Nitride ceramics are compounds of a metal or metalloid (Si, B) and nitrogen such as titanium nitride (TiN), silicon nitride (Si3N4), boron nitride (BN) or aluminum nitride (AlN). Nitrides are relatively inert and have good thermal conductivity combined with high electrical insulation capability
  • Design Guidelines - Thick Film Resistors and Patterned Substrates
    Guidelines apply to both Al2O3 and ALN (Aluminum Nitride) substrates unless otherwise noted. Dimensions are in inches unless otherwise stated. The above are guidelines only and not to be construed as ultimate limitations. Any listed parameter may be improved if other related parameters can
  • Comparison of RF Terminations with BeO and ALN Substrates
    the use of BeO, though, has necessitated the search for alternative materials that do not have the toxicity associated with beryllia. Aluminum Nitride (AlN) has emerged as the best current candidate to replace BeO in these applications. This paper delineates the issues involved and provides two examples
  • Power Handling of AIN vs. Al203
    Thermal conductivity of a ceramic substrate is an important element when considering the differences between AlN (aluminum nitride) and Al2O3 (alumina). A brief explanation and basic equations follow. The thermal conductivities of each of the ceramics are: [1] Kn = 170-190 (W/m °C) AlN [2] Ka = ~25
  • MICRO: BEOL Equipment
    Gerald Beyer and Mieke Van Bavel, Research into deposition processes discusses the properties of atomic layer deposition TiN and tungsten-carbon-nitride films on different substrate materials in integrated stacks. nterconnects have been, are, and will continue to be a limiting factor

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